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IPI020N06NAKSA1

IPI020N06NAKSA1
Mfr. #:
IPI020N06NAKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 60V 29A TO262-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPI020N06NAKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPI020N06NAKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IPI020N06
Confezione
Tubo
Alias ​​parziali
IPI020N06N IPI020N06NXK SP000962132
Unità di peso
0.084199 oz
Stile di montaggio
Foro passante
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-262-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
214 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
19 ns
Ora di alzarsi
45 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
120 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.8 V
Rds-On-Drain-Source-Resistenza
2 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
51 ns
Tempo di ritardo all'accensione tipico
24 ns
Qg-Gate-Carica
106 nC
Transconduttanza diretta-Min
210 S
Tags
IPI020, IPI02, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube
***p One Stop Global
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262
***et Europe
Trans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 60V 29A TO262-3
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPI020N06NAKSA1
DISTI # V36:1790_06378389		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		0
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1-ND    		Infineon Technologies AGMOSFET N-CH 60V 29A TO262-3
    RoHS: Compliant
    Min Qty: 500
    Container: Bulk    		Temporarily Out of Stock
    • 500:$2.8685
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube - Bulk (Alt: IPI020N06NAKSA1)
    RoHS: Compliant
    Min Qty: 178
    Container: Bulk    		Americas - 0
    • 174:$1.9900
    • 176:$1.8900
    • 350:$1.7900
    • 870:$1.7900
    • 1740:$1.6900
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI020N06NAKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 500:$2.1900
    • 1000:$2.0900
    • 2000:$2.0900
    • 3000:$1.9900
    • 5000:$1.8900
    IPI020N06NAKSA1
    DISTI # SP000962132    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube (Alt: SP000962132)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€2.2900
    • 10:€2.0900
    • 25:€1.9900
    • 50:€1.8900
    • 100:€1.7900
    • 500:€1.7900
    • 1000:€1.6900
    IPI020N06NAKSA1
    DISTI # 726-IPI020N06NAKSA1    		Infineon Technologies AGMOSFET N-Ch 60V 120A I2PAK-3
    RoHS: Compliant    		491
    • 1:$4.1500
    • 10:$3.5300
    • 100:$3.0600
    • 250:$2.9000
    • 500:$2.6000
    • 1000:$2.2000
    • 2500:$2.0900
    IPI020N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant    		19420
    • 1000:$1.8600
    • 500:$1.9500
    • 100:$2.0300
    • 25:$2.1200
    • 1:$2.2800
    Immagine Parte # Descrizione
    IPI020N06NAKSA1

    Mfr.#: IPI020N06NAKSA1

    OMO.#: OMO-IPI020N06NAKSA1

    		 MOSFET N-Ch 60V 120A I2PAK-3
    IPI020N06N

    Mfr.#: IPI020N06N

    OMO.#: OMO-IPI020N06N-1190

    		 Nuovo e originale
    IPI020N06NAKSA1

    Mfr.#: IPI020N06NAKSA1

    OMO.#: OMO-IPI020N06NAKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 29A TO262-3
    IPI020N06NG

    Mfr.#: IPI020N06NG

    OMO.#: OMO-IPI020N06NG-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
    Inserisci la quantità:
    Il prezzo attuale di IPI020N06NAKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,54 USD
    2,54 USD
    10
    2,41 USD
    24,08 USD
    100
    2,28 USD
    228,15 USD
    500
    2,15 USD
    1 077,40 USD
    1000
    2,03 USD
    2 028,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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