SQJ850EP-T1_GE3

SQJ850EP-T1_GE3
Mfr. #:
SQJ850EP-T1_GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET RECOMMENDED ALT 78-SQJ464EP-T1_GE3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SQJ850EP-T1_GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ850EP-T1_GE3 DatasheetSQJ850EP-T1_GE3 Datasheet (P4-P6)SQJ850EP-T1_GE3 Datasheet (P7-P9)SQJ850EP-T1_GE3 Datasheet (P10-P11)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-SO-8L-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
24 A
Rds On - Resistenza Drain-Source:
19 mOhms
Vgs th - Tensione di soglia gate-source:
1.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
30 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
45 W
Configurazione:
Separare
Modalità canale:
Aumento
Qualificazione:
AEC-Q101
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SQ
Tipo di transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
29 S
Tempo di caduta:
8 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
15 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
22 ns
Tempo di ritardo di accensione tipico:
21 ns
Unità di peso:
0.017870 oz
Tags
SQJ850EP-T1, SQJ850EP-T, SQJ850E, SQJ850, SQJ85, SQJ8, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***e
    L***e
    RU

    Works

    2019-04-07
    A***h
    A***h
    RU

    Didn't check.

    2019-02-13
***ure Electronics
Single N-Channel 60 V 0.023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8L
***ical
Trans MOSFET N-CH 60V 24A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
***ment14 APAC
MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:45W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
Parte # Mfg. Descrizione Azione Prezzo
SQJ850EP-T1-GE3
DISTI # V72:2272_09219219
Vishay IntertechnologiesN-CHANNEL 60V PPAK SO-8L846
  • 500:$1.1157
  • 250:$1.2112
  • 100:$1.3456
  • 25:$1.6670
  • 10:$1.6909
  • 1:$2.1202
SQJ850EP-T1-GE3
DISTI # V36:1790_09219219
Vishay IntertechnologiesN-CHANNEL 60V PPAK SO-8L0
    SQJ850EP-T1_GE3
    DISTI # SQJ850EP-T1_GE3CT-ND
    Vishay SiliconixMOSFET N-CH 60V 24A
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    8624In Stock
    • 1000:$0.8256
    • 500:$0.9965
    • 100:$1.2129
    • 10:$1.5090
    • 1:$1.6800
    SQJ850EP-T1_GE3
    DISTI # SQJ850EP-T1_GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 60V 24A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    8624In Stock
    • 1000:$0.8256
    • 500:$0.9965
    • 100:$1.2129
    • 10:$1.5090
    • 1:$1.6800
    SQJ850EP-T1_GE3
    DISTI # SQJ850EP-T1_GE3TR-ND
    Vishay SiliconixMOSFET N-CH 60V 24A
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    6000In Stock
    • 6000:$0.7371
    • 3000:$0.7463
    SQJ850EP-T1-GE3
    DISTI # 30153204
    Vishay IntertechnologiesN-CHANNEL 60V PPAK SO-8L846
    • 500:$1.1994
    • 250:$1.3020
    • 100:$1.4465
    • 25:$1.7920
    • 10:$1.8177
    • 9:$2.2792
    SQJ850EP-T1_GE3
    DISTI # SQJ850EP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 24A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ850EP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
      SQJ850EP-T1_GE3
      DISTI # SQJ850EP-T1_GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 60V 24A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ850EP-T1_GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
        SQJ850EP-T1_GE3
        DISTI # 37T8257
        Vishay IntertechnologiesMOSFET,N CHANNEL,W DIODE,60V,24A,POPAK8L,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes3760
          SQJ850EP-T1_GE3
          DISTI # 78-SQJ850EP-T1_GE3
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ464EP-T1_GE3
          RoHS: Compliant
          0
            SQJ850EP-T1-GE3
            DISTI # 78-SQJ850EP-T1-GE3
            Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ850EP-T1_GE3
            RoHS: Compliant
            0
              SQJ850EP-T1-GE3Vishay Intertechnologies*** FREE SHIPPING ORDERS OVER $100 *** POWER FIELD-EFFECT TRANSISTOR, 24A I(D), 60V, 0.023OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET2884
              • 1450:$0.6300
              • 801:$0.6900
              • 1:$1.8000
              SQJ850EP-T1_GE3
              DISTI # 1869932
              Vishay IntertechnologiesMOSFET,N CH,W DIODE,60V,24A,POPAK8L3804
              • 500:£0.8260
              • 250:£0.9450
              • 100:£1.0600
              • 25:£1.3200
              • 5:£1.4300
              SQJ850EP-T1-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ850EP-T1_GE3
              RoHS: Compliant
              Americas -
                SQJ850EP-T1_GE3
                DISTI # 1869932
                Vishay IntertechnologiesMOSFET,N CH,W DIODE,60V,24A,POPAK8L
                RoHS: Compliant
                3760
                • 1000:$1.3300
                • 500:$1.6100
                • 100:$2.0600
                • 10:$2.5500
                • 1:$2.8300
                Immagine Parte # Descrizione
                SQJ850EP-T1_GE3

                Mfr.#: SQJ850EP-T1_GE3

                OMO.#: OMO-SQJ850EP-T1-GE3

                MOSFET RECOMMENDED ALT 78-SQJ464EP-T1_GE3
                SQJ850EP-T1-GE3-CUT TAPE

                Mfr.#: SQJ850EP-T1-GE3-CUT TAPE

                OMO.#: OMO-SQJ850EP-T1-GE3-CUT-TAPE-1190

                Nuovo e originale
                SQJ850EP-T1_GE3

                Mfr.#: SQJ850EP-T1_GE3

                OMO.#: OMO-SQJ850EP-T1-GE3-VISHAY

                MOSFET N-CH 60V 24A
                SQJ850EP

                Mfr.#: SQJ850EP

                OMO.#: OMO-SQJ850EP-1190

                Nuovo e originale
                SQJ850EP-T1-GE3

                Mfr.#: SQJ850EP-T1-GE3

                OMO.#: OMO-SQJ850EP-T1-GE3-1190

                N-CHANNEL 60V PPAK SO-8L
                SQJ850EP-T2-GE3

                Mfr.#: SQJ850EP-T2-GE3

                OMO.#: OMO-SQJ850EP-T2-GE3-1190

                Nuovo e originale
                Disponibilità
                Azione:
                Available
                Su ordine:
                1000
                Inserisci la quantità:
                Il prezzo attuale di SQJ850EP-T1_GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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