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HN1B04FE-GR,LF

HN1B04FE-GR,LF
Mfr. #:
HN1B04FE-GR,LF
Produttore:
Toshiba
Descrizione:
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HN1B04FE-GR,LF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HN1B04FE-GR,LF DatasheetHN1B04FE-GR,LF Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Toshiba
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-563-6
Polarità del transistor:
NPN, PNP
Configurazione:
Dual
Tensione collettore-emettitore VCEO Max:
50 V
Collettore-tensione di base VCBO:
60 V, - 50 V
Emettitore-tensione di base VEBO:
5 V
Tensione di saturazione collettore-emettitore:
100 mV
Corrente massima del collettore CC:
150 mA
Guadagno larghezza di banda prodotto fT:
80 MHz, 80 MHz
Temperatura massima di esercizio:
+ 150 C
Serie:
HN1B04
Guadagno di corrente CC hFE Max:
400
Confezione:
Bobina
Marca:
Toshiba
Guadagno base/collettore DC hfe min:
120
Pd - Dissipazione di potenza:
100 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
4000
sottocategoria:
transistor
Unità di peso:
0.000106 oz
Tags
HN1B04FE-GR, HN1B04FE-G, HN1B04FE, HN1B04, HN1B0, HN1B, HN1
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS NPN/PNP 50V 0.15A ES6
***enic
50V 100mW 150mA 200@2mA,6V 80MHz 100mV@100mA,10mA 1 NPN,1 PNP +150¡æ@(Tj) SOT-666 Bipolar Transistors - BJT ROHS
***el Electronic
IC OPAMP CUR SENS 1.6MHZ SOT23-6
***ical
Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23
***el Electronic
SMCJ Series 38.9 V 1.5 kW Surface Mount Uni-Directional TVS Diode - DO-214AB
***enic
30nA 50V 320mW 150mA 290@2mA,5V 100MHz 170mV@100mA,5mA NPN +150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***or
X34 PB-F SOT-23 TRANSISTOR FOR L
***-Wing Technology
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 180 @ 1mA 6V 150mA 150mW 100MHz
***ical
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:180; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***-Wing Technology
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz
***p One Stop
Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PA1774 - PNP general-purpose transistor
*** Americas
PNP transistor in a SOT416 (SC-75) plastic package
***-Wing Technology
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz
***p One Stop
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:120; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***et
Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R
***enic
50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***
TRANS S-MINI PLN
*** Source Electronics
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM
***enic
50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS
***
VESM PLN ACTIVE
Parte # Mfg. Descrizione Azione Prezzo
HN1B04FE-GR,LF
DISTI # V36:1790_13897437		Toshiba America Electronic ComponentsX34 PB-F ES6 PLN (LF) TRANSIST0
  • 2000000:$0.0267
  • 400000:$0.0343
  • 40000:$0.0503
  • 4000:$0.0531
HN1B04FE-GR,LF
DISTI # HN1B04FE-GRLFCT-ND		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A ES6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		15926In Stock
  • 1000:$0.0607
  • 500:$0.0892
  • 250:$0.1047
  • 100:$0.1666
  • 25:$0.2140
  • 10:$0.2970
  • 1:$0.3300
HN1B04FE-GR,LF
DISTI # HN1B04FE-GRLFDKR-ND		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A ES6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		15926In Stock
  • 1000:$0.0607
  • 500:$0.0892
  • 250:$0.1047
  • 100:$0.1666
  • 25:$0.2140
  • 10:$0.2970
  • 1:$0.3300
HN1B04FE-GR,LF
DISTI # HN1B04FE-GRLFTR-ND		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A ES6
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		8000In Stock
  • 100000:$0.0308
  • 28000:$0.0370
  • 12000:$0.0393
  • 8000:$0.0462
  • 4000:$0.0531
HN1B04FE-GRLF
DISTI # HN1B04FE-GR,LF		Toshiba America Electronic ComponentsTrans GP BJT NPN/PNP 50V 0.15A 6-Pin SC-107C Emboss T/R - Tape and Reel (Alt: HN1B04FE-GR,LF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 40000:$0.0282
  • 24000:$0.0290
  • 16000:$0.0306
  • 8000:$0.0324
  • 4000:$0.0345
HN1B04FE-GR,LF
DISTI # 757-HN1B04FEGRLF		Toshiba America Electronic ComponentsBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
RoHS: Compliant		15840
  • 1:$0.3200
  • 10:$0.2040
  • 100:$0.0850
  • 1000:$0.0580
  • 4000:$0.0440
  • 8000:$0.0380
  • 24000:$0.0360
  • 48000:$0.0330
  • 100000:$0.0290
HN1B04FE-GR,LF(BToshiba America Electronic Components 3200
  • 1668:$0.1600
  • 140:$0.2400
  • 1:$0.8000
HN1B04FE-GRLFToshiba America Electronic ComponentsBipolar Transistors - BJTES6 PLN (LF) TRANSISTOR
RoHS: Compliant		Americas -
    HN1B04FE-GR,LFToshiba America Electronic ComponentsBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
    RoHS: Compliant    		Americas -
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      Disponibilità
      Azione:
      15
      Su ordine:
      1998
      Inserisci la quantità:
      Il prezzo attuale di HN1B04FE-GR,LF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,32 USD
      0,32 USD
      10
      0,20 USD
      2,04 USD
      100
      0,08 USD
      8,50 USD
      1000
      0,06 USD
      58,00 USD
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