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ZXMN10A11GTA

ZXMN10A11GTA
Mfr. #:
ZXMN10A11GTA
Produttore:
Diodes Incorporated
Descrizione:
Darlington Transistors MOSFET 100V N-Chnl UMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
ZXMN10A11GTA Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
ZXMN10A11GTA maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Diodi incorporati
categoria di prodotto
FET - Single
Serie
ZXMN10A
Confezione
Confezione alternativa con nastro tagliato (CT)
Unità di peso
0.000282 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-261-4, TO-261AA
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
SOT-223
Configurazione
Singolo Doppio Scarico
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
2W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
274pF @ 50V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
1.7A (Ta)
Rds-On-Max-Id-Vgs
350 mOhm @ 2.6A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Carica-Qg-Vgs
5.4nC @ 10V
Pd-Power-Dissipazione
3.9 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
3.5 ns
Ora di alzarsi
1.7 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
2.4 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
450 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
7.4 ns
Tempo di ritardo all'accensione tipico
2.7 ns
Modalità canale
Aumento
Tags
ZXMN10A11G, ZXMN10A1, ZXMN10A, ZXMN10, ZXMN1, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 1.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
ZXMN10A11G Series 100 V 0.35 Ohm N-Channel Enhancement Mode MOSFET -SOT-223
***p One Stop Global
Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R
***C
Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R
***Components
On a Reel of 1000, DiodesZetex ZXMN10A11GTA MOSFET
***ied Electronics & Automation
MOSFET N-Channel 100V 2.4A SOT223
*** Source Electronics
MOSFET N-CH 100V 1.7A SOT223
***ronik
N-CH MOS-FET 2,4A 100V SOT223
***ser
MOSFETs 100V N-Chnl UMOS
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Parte # Mfg. Descrizione Azione Prezzo
ZXMN10A11GTA
DISTI # ZXMN10A11GCT-ND		Diodes IncorporatedMOSFET N-CH 100V 1.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12930In Stock
  • 500:$0.4192
  • 100:$0.5659
  • 10:$0.7340
  • 1:$0.8400
ZXMN10A11GTA
DISTI # ZXMN10A11GTR-ND		Diodes IncorporatedMOSFET N-CH 100V 1.7A SOT223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		12000In Stock
  • 1000:$0.3256
ZXMN10A11GTA
DISTI # ZXMN10A11GTA		Diodes IncorporatedTrans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXMN10A11GTA)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.2709
  • 2000:$0.2579
  • 4000:$0.2459
  • 6000:$0.2349
  • 10000:$0.2299
ZXMN10A11GTA
DISTI # ZXMN10A11GTA		Diodes IncorporatedTrans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R (Alt: ZXMN10A11GTA)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Asia - 0
    ZXMN10A11GTA
    DISTI # 70438810    		Diodes IncorporatedMOSFET N-Channel 100V 2.4A SOT223
    RoHS: Compliant    		0
    • 25:$0.6100
    • 50:$0.5300
    • 100:$0.4800
    • 250:$0.4400
    ZXMN10A11GTA
    DISTI # 522-ZXMN10A11GTA    		Diodes IncorporatedMOSFET 100V N-Chnl UMOS
    RoHS: Compliant    		3660
    • 1:$0.7300
    • 10:$0.6030
    • 100:$0.3890
    • 1000:$0.3110
    ZXMN10A11GTA
    DISTI # 7082494P    		Zetex / Diodes IncMOSFET N-CHANNEL 100V 2.4A SOT223, RL1095
    • 50:£0.3440
    • 100:£0.3100
    • 250:£0.2760
    • 500:£0.2420
    ZXMN10A11GTAZetex / Diodes Inc1900 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET2
    • 1:$1.0720
    ZXMN10A11GTADiodes Incorporated 
    RoHS: Compliant    		Europe - 900
      ZXMN10A11GTAZetex / Diodes Inc 30736
        Immagine Parte # Descrizione
        ZXMN10A09KTC

        Mfr.#: ZXMN10A09KTC

        OMO.#: OMO-ZXMN10A09KTC

        		 MOSFET MOSFET N-CH 100V
        ZXMN10A08

        Mfr.#: ZXMN10A08

        OMO.#: OMO-ZXMN10A08-1190

        		 Nuovo e originale
        ZXMN10A08DN8TC

        Mfr.#: ZXMN10A08DN8TC

        OMO.#: OMO-ZXMN10A08DN8TC-DIODES

        		 MOSFET 2N-CH 100V 1.6A 8SOIC
        ZXMN10A08E6TA

        Mfr.#: ZXMN10A08E6TA

        OMO.#: OMO-ZXMN10A08E6TA-DIODES

        		 Trans MOSFET N-CH 100V 3.5A Automotive 6-Pin SOT-26 T/R
        ZXMN10A11G

        Mfr.#: ZXMN10A11G

        OMO.#: OMO-ZXMN10A11G-1190

        		 MOSFET, N CHANNEL, 100V, 2.4A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.6ohm, Rds(on) Test Voltage Vgs:10V,
        ZXMN10B08E6TC

        Mfr.#: ZXMN10B08E6TC

        OMO.#: OMO-ZXMN10B08E6TC-DIODES

        		 MOSFET N-CH 100V 1.6A SOT23-6
        ZXMN10A08DN8TA-CUT TAPE

        Mfr.#: ZXMN10A08DN8TA-CUT TAPE

        OMO.#: OMO-ZXMN10A08DN8TA-CUT-TAPE-1190

        		 Nuovo e originale
        ZXMN10B08E6TA

        Mfr.#: ZXMN10B08E6TA

        OMO.#: OMO-ZXMN10B08E6TA-DIODES

        		 Darlington Transistors MOSFET 100V N-Chnl UMOS
        ZXMN10A11KTC

        Mfr.#: ZXMN10A11KTC

        OMO.#: OMO-ZXMN10A11KTC-DIODES

        		 Darlington Transistors MOSFET N-Chan 100V MOSFET (UMOS)
        ZXMN10A08E6TC

        Mfr.#: ZXMN10A08E6TC

        OMO.#: OMO-ZXMN10A08E6TC-DIODES

        		 MOSFET 100V N-Chnl UMOS
        Disponibilità
        Azione:
        Available
        Su ordine:
        5000
        Inserisci la quantità:
        Il prezzo attuale di ZXMN10A11GTA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,34 USD
        0,34 USD
        10
        0,33 USD
        3,28 USD
        100
        0,31 USD
        31,04 USD
        500
        0,29 USD
        146,55 USD
        1000
        0,28 USD
        275,90 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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