ZXMN10B08E6TA

Mfr. #:: ZXMN10B08E6TA
Produttore:: Diodes Incorporated
Descrizione:: Darlington Transistors MOSFET 100V N-Chnl UMOS
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: ZXMN10B08E6TA Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Maggiori informazioni:: ZXMN10B08E6TA maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Diodi incorporati

categoria di prodotto: FET - Single

Serie: ZXMN10

Confezione: Imballaggio alternativo Digi-ReelR

Unità di peso: 0.000529 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SOT-23-6

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: SOT-26

Configurazione: Scarico quadruplo singolo

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 1.1W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Ingresso-Capacità-Ciss-Vds: 497pF @ 50V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 1.6A (Ta)

Rds-On-Max-Id-Vgs: 230 mOhm @ 1.6A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Carica-Qg-Vgs: 9.2nC @ 10V

Pd-Power-Dissipazione: 1.1 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 2.1 ns

Ora di alzarsi: 2.1 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 1.9 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistenza: 230 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 12.1 ns

Tempo di ritardo all'accensione tipico: 2.9 ns

Modalità canale: Aumento

Tags: ZXMN10B08E6TA, ZXMN10B08E6T, ZXMN10B, ZXMN10, ZXMN1, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN10B08E6TA Descrizione

***Components: In a Pack of 10, N-Channel MOSFET, 1.9 A, 100 V, 6-Pin SOT-23 Diodes Inc ZXMN10B08E6TA

***ure Electronics: ZXMN10B Series 100 V 0.23 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6

***ical: Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-23 T/R

***p One Stop Global: Trans MOSFET N-CH 100V 1.9A 6-Pin SOT-23 T/R

***ied Electronics & Automation: MOSFET N-Channel 100V 1.9A SOT23-6

*** Source Electronics: MOSFET N-CH 100V 1.6A SOT23-6

***ronik: N-CH MOS-FET 1,9A 100V SOT23-6

***ser: MOSFETs 100V N-Chnl UMOS

ZXMN10B08E6TA Maggiori informazioni

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
ZXMN10B08E6TA DISTI # V79:2366_18322372	Zetex / Diodes Inc	Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-23 T/R RoHS: Compliant	271	24000:$0.1971 9000:$0.2186 3000:$0.2429 1000:$0.2872 100:$0.3547 10:$0.5264 1:$0.6246
ZXMN10B08E6TA DISTI # ZXMN10B08E6CT-ND	Diodes Incorporated	MOSFET N-CH 100V 1.6A SOT23-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	33588In Stock	1000:$0.3462 500:$0.4328 100:$0.5843 10:$0.7570 1:$0.8700
ZXMN10B08E6TA DISTI # ZXMN10B08E6DKR-ND	Diodes Incorporated	MOSFET N-CH 100V 1.6A SOT23-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	33588In Stock	1000:$0.3462 500:$0.4328 100:$0.5843 10:$0.7570 1:$0.8700
ZXMN10B08E6TA DISTI # ZXMN10B08E6TR-ND	Diodes Incorporated	MOSFET N-CH 100V 1.6A SOT23-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	27000In Stock	3000:$0.3046
ZXMN10B08E6TA DISTI # 26120585	Zetex / Diodes Inc	Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-23 T/R RoHS: Compliant	271	100:$0.3547 29:$0.5264
ZXMN10B08E6TA DISTI # ZXMN10B08E6TA	Diodes Incorporated	Trans MOSFET N-CH 100V 1.9A 6-Pin SOT-23 T/R - Tape and Reel (Alt: ZXMN10B08E6TA) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2689 6000:$0.2549 12000:$0.2439 18000:$0.2319 30000:$0.2269
ZXMN10B08E6TA DISTI # 70438813	Diodes Incorporated	MOSFET N-Channel 100V 1.9A SOT23-6 RoHS: Compliant	0	50:$0.5400 200:$0.5000 500:$0.4600 1000:$0.4100
ZXMN10B08E6TA DISTI # 522-ZXMN10B08E6TA	Diodes Incorporated	MOSFET 100V N-Chnl UMOS RoHS: Compliant	467	1:$0.7200 10:$0.5930 100:$0.3820 1000:$0.3060
ZXMN10B08E6TA	Diodes Incorporated	ZXMN10B Series 100 V 0.23 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6 RoHS: Compliant	1650Cut Tape/Mini-Reel	1:$0.3750 100:$0.3100 250:$0.3000 500:$0.2950 1500:$0.2700
ZXMN10B08E6TA DISTI # 6697420P	Zetex / Diodes Inc	MOSFET N-CHANNEL 100V 1.9A SOT23-6, RL	820	50:£0.3810 200:£0.3170 500:£0.3090
ZXMN10B08E6TA DISTI # C1S205700331887	Diodes Incorporated	Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-23 T/R RoHS: Compliant	271	100:$0.3547 10:$0.5264

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: ZXMN10A08DN8TA OMO.#: OMO-ZXMN10A08DN8TA	MOSFET 100V 2.1A N-Channel Enhancement MOSFET
	Mfr.#: ZXMN10A07Z OMO.#: OMO-ZXMN10A07Z-1190	Nuovo e originale
	Mfr.#: ZXMN10A09K OMO.#: OMO-ZXMN10A09K-1190	Nuovo e originale
	Mfr.#: ZXMN10A11G OMO.#: OMO-ZXMN10A11G-1190	MOSFET, N CHANNEL, 100V, 2.4A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.6ohm, Rds(on) Test Voltage Vgs:10V,
	Mfr.#: ZXMN10B08E6QTA , MAX6465 OMO.#: OMO-ZXMN10B08E6QTA-MAX6465-1190	Nuovo e originale
	Mfr.#: ZXMN10B08E6TC OMO.#: OMO-ZXMN10B08E6TC-DIODES	MOSFET N-CH 100V 1.6A SOT23-6
	Mfr.#: ZXMN10A08DN8TA-CUT TAPE OMO.#: OMO-ZXMN10A08DN8TA-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: ZXMN10A08E6TC-CUT TAPE OMO.#: OMO-ZXMN10A08E6TC-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: ZXMN10A11KTC OMO.#: OMO-ZXMN10A11KTC-DIODES	Darlington Transistors MOSFET N-Chan 100V MOSFET (UMOS)
	Mfr.#: ZXMN10A09KTC OMO.#: OMO-ZXMN10A09KTC-DIODES	MOSFET MOSFET N-CH 100V

Disponibilità

Azione:: Available
Su ordine:: 3500
Inserisci la quantità:

Il prezzo attuale di ZXMN10B08E6TA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,30 USD~~; ~~0,30 USD~~

10: ~~0,28 USD~~; ~~2,81 USD~~

100: ~~0,27 USD~~; ~~26,61 USD~~

500: ~~0,25 USD~~; ~~125,65 USD~~

1000: ~~0,24 USD~~; ~~236,50 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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ZXMN10B08E6TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes