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IRF7467PBF

IRF7467PBF
Mfr. #:
IRF7467PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 30V 1 N-CH HEXFET 15mOhms 21nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF7467PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7467PBF DatasheetIRF7467PBF Datasheet (P4-P6)IRF7467PBF Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
10 A
Rds On - Resistenza Drain-Source:
13.5 mOhms
Vgs - Tensione Gate-Source:
12 V
Qg - Carica cancello:
21 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2.5 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Tipo di transistor:
1 N-Channel
Tipo:
Smps MOSFET
Larghezza:
3.9 mm
Marca:
Infineon / IR
Tempo di caduta:
4 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
2.5 ns
Quantità confezione di fabbrica:
4085
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
19 ns
Tempo di ritardo di accensione tipico:
7.8 ns
Parte # Alias:
SP001551398
Unità di peso:
0.019048 oz
Tags
IRF7467, IRF746, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.4 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-12V
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 11A 8-Pin SOIC
***i-Key
MOSFET N-CH 30V 11A 8-SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET, N, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:90A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; SMD Marking:F7467; Temperature, Tj Min:-55°C; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:2V; Width, External:4.05mm
***ment14 APAC
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Junction Temperature Tj Min:-55°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:90A; SMD Marking:F7467; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Parte # Mfg. Descrizione Azione Prezzo
IRF7467PBF
DISTI # IRF7467PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 4085
Container: Tube		Limited Supply - Call
    IRF7467PBF
    DISTI # 70017587    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 9.4 Milliohms,ID 11A,SO-8,PD 2.5W,VGS +/-12V
    RoHS: Compliant    		0
    • 1:$1.0600
    • 2:$1.0390
    • 5:$1.0070
    • 10:$0.9650
    • 25:$0.9010
    IRF7467PBF
    DISTI # 9102647    		Infineon Technologies AG 
    RoHS: Compliant    		0
    • 1000:$0.8750
    • 500:$0.9410
    • 250:$1.0600
    • 100:$1.1900
    • 10:$1.4700
    • 1:$1.7800
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    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di IRF7467PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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