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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSC042N03ST DISTI # BSC042N03ST-ND | Infineon Technologies AG | MOSFET N-CH 30V 50A TDSON-8 RoHS: Not compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSC042NE7NS3GATMA1 OMO.#: OMO-BSC042NE7NS3GATMA1 |
MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC042N03MSGATMA1 |
MOSFET N-CH 30V 93A TDSON-8 |
|
Mfr.#: BSC042N03S OMO.#: OMO-BSC042N03S-1190 |
MOSFET Transistor, N-Channel, LLCC |
|
|
Mfr.#: BSC042NE7NS3 G OMO.#: OMO-BSC042NE7NS3-G-1190 |
Trans MOSFET N-CH 75V 19A 8-Pin TDSON T/R (Alt: BSC042NE7NS3 G) |
|
|
Mfr.#: BSC042NE7NS3G OMO.#: OMO-BSC042NE7NS3G-1190 |
Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP |
|
|
Mfr.#: BSC046N02KS G OMO.#: OMO-BSC046N02KS-G-1190 |
MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 |
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Mfr.#: BSC046N10NS3G OMO.#: OMO-BSC046N10NS3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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|
Mfr.#: BSC047N08NS3 G OMO.#: OMO-BSC047N08NS3-G-1190 |
MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1 |
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Mfr.#: BSC047N08NS3GS OMO.#: OMO-BSC047N08NS3GS-1190 |
Nuovo e originale |
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Mfr.#: BSC046N02KSGAUMA1 |
MOSFET N-CH 20V 80A TDSON-8 |
