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IXXN110N65C4H1

IXXN110N65C4H1
Mfr. #:
IXXN110N65C4H1
Produttore:
Littelfuse
Descrizione:
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXXN110N65C4H1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXN110N65C4H1 DatasheetIXXN110N65C4H1 Datasheet (P4-P6)IXXN110N65C4H1 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
IXXN110N65C4H1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Prodotto:
Moduli di silicio IGBT
Configurazione:
Singolo doppio emettitore
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.98 V
Corrente continua del collettore a 25 C:
210 A
Corrente di dispersione gate-emettitore:
100 nA
Pd - Dissipazione di potenza:
750 W
Pacchetto/custodia:
SOT-227B-4
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Serie:
IXXN110N65
Marca:
IXYS
Stile di montaggio:
SMD/SMT
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
10
sottocategoria:
IGBT
Nome depositato:
XPT
Unità di peso:
1.058219 oz
Tags
IXXN1, IXXN, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Insulated Gate Bipolar Transistor, 210A I(C), 650V V(BR)CES, N-Channel
***ical
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
***el Electronic
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
***i-Key
IGBT MOD 650V 210A 750W SOT227B
IGBT Modules
Littelfuse IGBT Modules offer a comprehensive portfolio. The Littelfuse IGBT Modules range from phase legs to six-packs and everything in between. This makes Littelfuse able to accommodate a wide array of topology and package requirements.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IXXN110N65C4H1
DISTI # IXXN110N65C4H1-ND		IXYS CorporationIGBT 650V 210A 750W SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		375In Stock
  • 250:$17.3260
  • 100:$18.8794
  • 30:$20.3133
  • 10:$22.1060
  • 1:$23.9000
IXXN110N65C4H1
DISTI # 747-IXXN110N65C4H1		IXYS CorporationIGBT Modules 650V/234A Trench IGBT GenX4 XPT
RoHS: Compliant		1973
  • 1:$23.9000
  • 5:$22.7600
  • 10:$22.1100
  • 25:$20.3200
  • 50:$19.4600
  • 100:$18.8800
  • 200:$17.3300
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    Disponibilità
    Azione:
    310
    Su ordine:
    2293
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    Il prezzo attuale di IXXN110N65C4H1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    23,90 USD
    23,90 USD
    5
    22,76 USD
    113,80 USD
    10
    22,10 USD
    221,00 USD
    25
    20,31 USD
    507,75 USD
    50
    19,46 USD
    973,00 USD
    100
    18,87 USD
    1 887,00 USD
    200
    17,32 USD
    3 464,00 USD
    500
    16,13 USD
    8 065,00 USD
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