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IXXN110N65B4H1

IXXN110N65B4H1
Mfr. #:
IXXN110N65B4H1
Produttore:
Littelfuse
Descrizione:
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXXN110N65B4H1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXN110N65B4H1 DatasheetIXXN110N65B4H1 Datasheet (P4-P6)IXXN110N65B4H1 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
IXXN110N65B4H1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
SOT-227
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
2.1 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
215 A
Pd - Dissipazione di potenza:
750 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
IXXN110N65
Confezione:
Tubo
Corrente continua del collettore Ic Max:
110 A
Marca:
IXYS
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
10
sottocategoria:
IGBT
Nome depositato:
XPT
Unità di peso:
1.058219 oz
Tags
IXXN1, IXXN, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IXXN110N65B4H1
DISTI # IXXN110N65B4H1-ND		IXYS CorporationIGBT 650V 215A 750W SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		367In Stock
  • 250:$17.3260
  • 100:$18.8794
  • 30:$20.3133
  • 10:$22.1060
  • 1:$23.9000
IXXN110N65B4H1
DISTI # 747-IXXN110N65B4H1		IXYS CorporationIGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
RoHS: Compliant		24
  • 1:$22.7600
  • 5:$21.6200
  • 10:$21.0600
  • 25:$19.3500
  • 50:$18.8800
  • 100:$17.9800
  • 200:$16.5000
  • 500:$15.7100
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Disponibilità
Azione:
74
Su ordine:
2057
Inserisci la quantità:
Il prezzo attuale di IXXN110N65B4H1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
22,76 USD
22,76 USD
5
21,62 USD
108,10 USD
10
21,06 USD
210,60 USD
25
19,35 USD
483,75 USD
50
18,88 USD
944,00 USD
100
17,98 USD
1 798,00 USD
200
16,50 USD
3 300,00 USD
500
15,71 USD
7 855,00 USD
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