SPD02N60C3

Mfr. #:: SPD02N60C3
Produttore:: Rochester Electronics, LLC
Descrizione:: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SPD02N60C3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: INFINEON

categoria di prodotto: FET - Single

Serie: CoolMOS C3

Confezione: Bobina

Alias parziali: SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT

Unità di peso: 0.139332 oz

Stile di montaggio: SMD/SMT

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-252-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 25 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 12 ns

Ora di alzarsi: 3 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 1.8 A

Vds-Drain-Source-Breakdown-Voltage: 600 V

Rds-On-Drain-Source-Resistenza: 3 Ohms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 68 ns

Tempo di ritardo all'accensione tipico: 6 ns

Modalità canale: Aumento

Tags: SPD02N60C3, SPD02N60C, SPD02N6, SPD02N, SPD02, SPD0, SPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD02N60C3 Descrizione

***ical: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252 T/R

***p One Stop Global: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R

***ark: Mosfet, N Channel, 650V, 1.8A, To-252-3

***i-Key: MOSFET N-CH 650V 1.8A DPAK

***ronik: N-CH 600V 1.8A 3000mOhm TO252-3

***ponent Sense: TRA POWER SPD02N60C3 DPAK-3

***et: LOW POWER_PRICE/PERFORM

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***nell: MOSFET, N, COOLMOS, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Iar:1.8A; Corrente Id Max:1.8A; Corrente Idss Max:1µA; Corrente di Impulso Idm:5.4A; Dissipazione di Potenza Ptot Max:25W; Energia Max Avalanche Repetitiva:0.07mJ; Energia Singolo Impulso Avalanche Eas:50mJ; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Livello Temperatura a Piena Potenza:25°C; Modello Case Alternativo:D-PAK; No. di Transistor:1; Resistenza Stato On Max:3ohm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C

***ment14 APAC: Prices include import duty and tax. MOSFET, N, COOLMOS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:D-PAK; Avalanche Single Pulse Energy Eas:50mJ; Current Iar:1.8A; Current Id Max:1.8A; Current Idss Max:1µA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:3ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:25W; Pulse Current Idm:5.4A; Rate of Voltage Change dv / dt:50V/ns; Repetitive Avalanche Energy Max:0.07mJ; Termination Type:Surface Mount Device; Voltage Vds Typ:650V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SPD02N60C3BTMA1 DISTI # 26943265	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	15000	10000:$0.4689 5000:$0.4909 2500:$0.5512
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # C1S322000355848	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	15000	2500:$0.5440
SPD02N60C3BTMA1 DISTI # 59M2072	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 1.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):2.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0
SPD02N60C3	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	6	1000:$0.4400 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5400
SPD02N60C3 DISTI # 726-SPD02N60C3	Infineon Technologies AG	MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant	0
SPD02N60C3	Infineon Technologies AG	RoHS: Compliant	Europe - 445
SPD02N60C3BTMA1 DISTI # 1156419RL	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.8980 1000:$0.7080 2500:$0.6280 10000:$0.6040 25000:$0.6030
SPD02N60C3BTMA1 DISTI # 1156419	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.8980 1000:$0.7080 2500:$0.6280 10000:$0.6040 25000:$0.6030

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: SPD02N60S5 OMO.#: OMO-SPD02N60S5-126	IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5
	Mfr.#: SPD02N50C3 OMO.#: OMO-SPD02N50C3-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3 OMO.#: OMO-SPD02N80C3-126	IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3BTMA1 OMO.#: OMO-SPD02N80C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 2A TO-252
	Mfr.#: SPD02N50C3BTMA1 OMO.#: OMO-SPD02N50C3BTMA1-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: SPD02N60 OMO.#: OMO-SPD02N60-1190	Nuovo e originale
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 1.8A DPAK
	Mfr.#: SPD02N80C3. OMO.#: OMO-SPD02N80C3--1190	Nuovo e originale
	Mfr.#: SPD02U60C3 OMO.#: OMO-SPD02U60C3-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3000
Inserisci la quantità:

Il prezzo attuale di SPD02N60C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,60 USD~~; ~~0,60 USD~~

10: ~~0,57 USD~~; ~~5,70 USD~~

100: ~~0,54 USD~~; ~~54,00 USD~~

500: ~~0,51 USD~~; ~~255,00 USD~~

1000: ~~0,48 USD~~; ~~480,00 USD~~

Iniziare con

SPD02N60C3 5
SPD02N60C 6
SPD02N6 10
SPD02N 20
SPD02 21
SPD0 177
SPD 929

Prodotti più recenti

IO-Link™ Devices

Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
Large Diameter Clear Hole Spacers

RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
WE-ExB Series Common Mode Power Line Choke

Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
Compare SPD02N60C3

SPD02N60C3 vs SPD02N60C302N60C3 vs SPD02N60C3BTMA1
CPI2-B1-REU Production Device Programmer

Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
CFSH05-20L Schottky Diode

Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.

More Newest Products

SPD02N60C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes