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SPD02N60C3

SPD02N60C3
Mfr. #:
SPD02N60C3
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SPD02N60C3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
CoolMOS C3
Confezione
Bobina
Alias ​​parziali
SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
25 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
12 ns
Ora di alzarsi
3 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
1.8 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistenza
3 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
68 ns
Tempo di ritardo all'accensione tipico
6 ns
Modalità canale
Aumento
Tags
SPD02N60C3, SPD02N60C, SPD02N6, SPD02N, SPD02, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252 T/R
***p One Stop Global
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R
***ark
Mosfet, N Channel, 650V, 1.8A, To-252-3
***i-Key
MOSFET N-CH 650V 1.8A DPAK
***ronik
N-CH 600V 1.8A 3000mOhm TO252-3
***ponent Sense
TRA POWER SPD02N60C3 DPAK-3
***et
LOW POWER_PRICE/PERFORM
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***nell
MOSFET, N, COOLMOS, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Iar:1.8A; Corrente Id Max:1.8A; Corrente Idss Max:1µA; Corrente di Impulso Idm:5.4A; Dissipazione di Potenza Ptot Max:25W; Energia Max Avalanche Repetitiva:0.07mJ; Energia Singolo Impulso Avalanche Eas:50mJ; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Livello Temperatura a Piena Potenza:25°C; Modello Case Alternativo:D-PAK; No. di Transistor:1; Resistenza Stato On Max:3ohm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C
***ment14 APAC
Prices include import duty and tax. MOSFET, N, COOLMOS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:D-PAK; Avalanche Single Pulse Energy Eas:50mJ; Current Iar:1.8A; Current Id Max:1.8A; Current Idss Max:1µA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:3ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:25W; Pulse Current Idm:5.4A; Rate of Voltage Change dv / dt:50V/ns; Repetitive Avalanche Energy Max:0.07mJ; Termination Type:Surface Mount Device; Voltage Vds Typ:650V
Parte # Mfg. Descrizione Azione Prezzo
SPD02N60C3BTMA1
DISTI # 26943265		Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		15000
  • 10000:$0.4689
  • 5000:$0.4909
  • 2500:$0.5512
SPD02N60C3BTMA1
DISTI # SPD02N60C3BTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 1.8A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SPD02N60C3BTMA1
    DISTI # SPD02N60C3BTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 1.8A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SPD02N60C3BTMA1
      DISTI # C1S322000355848      		Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		15000
      • 2500:$0.5440
      SPD02N60C3BTMA1
      DISTI # 59M2072      		Infineon Technologies AGMOSFET, N CHANNEL, 650V, 1.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):2.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
        SPD02N60C3Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
        RoHS: Compliant        		6
        • 1000:$0.4400
        • 500:$0.4600
        • 100:$0.4800
        • 25:$0.5000
        • 1:$0.5400
        SPD02N60C3
        DISTI # 726-SPD02N60C3        		Infineon Technologies AGMOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3
        RoHS: Compliant        		0
          SPD02N60C3Infineon Technologies AG 
          RoHS: Compliant          		Europe - 445
            SPD02N60C3BTMA1
            DISTI # 1156419RL            		Infineon Technologies AGMOSFET, N, COOLMOS, D-PAK
            RoHS: Compliant            		0
            • 1:$1.5700
            • 10:$1.3300
            • 100:$1.0200
            • 500:$0.8980
            • 1000:$0.7080
            • 2500:$0.6280
            • 10000:$0.6040
            • 25000:$0.6030
            SPD02N60C3BTMA1
            DISTI # 1156419            		Infineon Technologies AGMOSFET, N, COOLMOS, D-PAK
            RoHS: Compliant            		0
            • 1:$1.5700
            • 10:$1.3300
            • 100:$1.0200
            • 500:$0.8980
            • 1000:$0.7080
            • 2500:$0.6280
            • 10000:$0.6040
            • 25000:$0.6030
            Immagine Parte # Descrizione
            SPD02N60C3BTMA1

            Mfr.#: SPD02N60C3BTMA1

            OMO.#: OMO-SPD02N60C3BTMA1

            		 MOSFET LOW POWER_LEGACY
            SPD02N60S5

            Mfr.#: SPD02N60S5

            OMO.#: OMO-SPD02N60S5-126

            		 IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5
            SPD02N50C3

            Mfr.#: SPD02N50C3

            OMO.#: OMO-SPD02N50C3-INFINEON-TECHNOLOGIES

            		 IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
            SPD02N80C3

            Mfr.#: SPD02N80C3

            OMO.#: OMO-SPD02N80C3-126

            		 IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3
            SPD02N80C3BTMA1

            Mfr.#: SPD02N80C3BTMA1

            OMO.#: OMO-SPD02N80C3BTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 800V 2A TO-252
            SPD02N50C3BTMA1

            Mfr.#: SPD02N50C3BTMA1

            OMO.#: OMO-SPD02N50C3BTMA1-INFINEON-TECHNOLOGIES

            		 LOW POWER_LEGACY
            SPD02N60

            Mfr.#: SPD02N60

            OMO.#: OMO-SPD02N60-1190

            		 Nuovo e originale
            SPD02N60C3BTMA1

            Mfr.#: SPD02N60C3BTMA1

            OMO.#: OMO-SPD02N60C3BTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 650V 1.8A DPAK
            SPD02N80C3.

            Mfr.#: SPD02N80C3.

            OMO.#: OMO-SPD02N80C3--1190

            		 Nuovo e originale
            SPD02U60C3

            Mfr.#: SPD02U60C3

            OMO.#: OMO-SPD02U60C3-1190

            		 Nuovo e originale
            Disponibilità
            Azione:
            Available
            Su ordine:
            3000
            Inserisci la quantità:
            Il prezzo attuale di SPD02N60C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
            Prezzo di riferimento (USD)
            Quantità
            Prezzo unitario
            est. Prezzo
            1
            0,60 USD
            0,60 USD
            10
            0,57 USD
            5,70 USD
            100
            0,54 USD
            54,00 USD
            500
            0,51 USD
            255,00 USD
            1000
            0,48 USD
            480,00 USD
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