S29GL01GS10TFI020

S29GL01GS10TFI020
Mfr. #:
S29GL01GS10TFI020
Produttore:
Cypress Semiconductor
Descrizione:
IC FLASH 1G PARALLEL 56TSOP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
S29GL01GS10TFI020 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
S29GL01GS10TFI020 maggiori informazioni S29GL01GS10TFI020 Product Details
Attributo del prodotto
Valore attributo
Produttore
Cypress Semiconductor Corp
categoria di prodotto
Memoria
Serie
GL-S
Confezione
Vassoio
Stile di montaggio
SMD/SMT
Intervallo operativo di temperatura
- 40 C to + 85 C
Pacchetto-Custodia
TSOP-56
Temperatura di esercizio
-40°C ~ 85°C (TA)
Interfaccia
Parallelo
Tensione di alimentazione
2.7 V ~ 3.6 V
Pacchetto-dispositivo-fornitore
56-TSOP
Dimensione della memoria
1G (64M x 16)
Tipo di memoria
FLASH - NOR
Velocità
100ns
Architettura
Eclisse
Formato-Memoria
VELOCE
Tipo di interfaccia
Parallelo
Organizzazione
64 M x 16
Alimentazione-Corrente-Max
100 mA
Larghezza bus dati
16 bit
Alimentazione-Tensione-Max
3.6 V
Alimentazione-Tensione-Min
2.7 V
Tipo di cronometraggio
asincrono
Tags
S29GL01GS10TFI, S29GL01GS10T, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
MirrorBit® NOR GL Flash Memory Device - EXPANSION
Cypress has expanded it's offering of MirrorBit® NOR GL Flash Memory Devices to include the 100ns access speeds. This additional offering of Cypress MirrorBit® NOR GL Flash Memory now provide the fastest access times in the high-density versions available. MirrorBit® NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption.Learn MoreCypress MirrorBit® GL NOR Flash family is optimized for the voltage, density, cost-per-bit, reliability, performance, and scalability needs of a wide variety of embedded applications. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires only a single 3.0V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MirrorBit® GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.View the entire MirrorBit® NOR GL Series
MirrorBit® NOR GL Flash Memory Device
Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Parte # Mfg. Descrizione Azione Prezzo
S29GL01GS10TFI020
DISTI # 31234132
Cypress SemiconductorNOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 100ns 56-Pin TSOP Tray
RoHS: Compliant
273
  • 91:$11.1333
S29GL01GS10TFI020
DISTI # S29GL01GS10TFI020-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
RoHS: Compliant
Min Qty: 1
Container: Tray
73In Stock
  • 1001:$8.0845
  • 546:$8.3632
  • 273:$8.4500
  • 182:$8.8898
  • 91:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS10TFI020
DISTI # 39T5695
Cypress SemiconductorFLASH MEMORY, 1024 MBIT, 100 NS, 56-TSOP,Flash Memory Type:Parallel NOR,Memory Size:1Gbit,Flash Memory Configuration:64M x 16bit,IC Interface Type:Parallel,Memory Case Style:TSOP,No. of Pins:56Pins,Clock Frequency:- RoHS Compliant: Yes0
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS10TFI020Cypress SemiconductorGL-S Series 1 Gb (64 M x 16) 3.6 V 100 ns SMT Flash Memory -TSOP-56
RoHS: Compliant
364Tray
  • 91:$8.8700
S29GL01GS10TFI020Spansion 
RoHS: Not Compliant
90
  • 1000:$8.9300
  • 500:$9.4000
  • 100:$9.7900
  • 25:$10.2100
  • 1:$11.0000
S29GL01GS10TFI020
DISTI # 797-S29GL01GS10TFI02
Cypress SemiconductorNOR Flash 1G 3V 100ns Parallel NOR Flash
RoHS: Compliant
36
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS10TFI020
DISTI # 1972434
Cypress SemiconductorMEMORY, FLASH, 1GB, 3V, 56TSOP
RoHS: Compliant
0
  • 1:£7.8500
  • 10:£6.7400
  • 25:£6.5900
  • 50:£6.5500
  • 100:£5.9300
S29GL01GS10TFI020
DISTI # 1972434
Cypress SemiconductorMEMORY, FLASH, 1GB, 3V, 56TSOP
RoHS: Compliant
0
  • 1:$15.2400
  • 10:$14.1100
  • 25:$13.7900
  • 50:$13.7100
  • 100:$12.7700
S29GL01GS10TFI020
DISTI # XSFP00000155696
CYPRESS SEMICONDUCTOR 
RoHS: Compliant
245
  • 91:$11.8300
  • 245:$11.0900
Immagine Parte # Descrizione
S29GL01GT10FHI023

Mfr.#: S29GL01GT10FHI023

OMO.#: OMO-S29GL01GT10FHI023

NOR Flash Nor
S29GL01GS10DHA020

Mfr.#: S29GL01GS10DHA020

OMO.#: OMO-S29GL01GS10DHA020

NOR Flash Nor
S29GL01GS11TFA010

Mfr.#: S29GL01GS11TFA010

OMO.#: OMO-S29GL01GS11TFA010

NOR Flash Nor
S29GL01GT12TFVV13

Mfr.#: S29GL01GT12TFVV13

OMO.#: OMO-S29GL01GT12TFVV13

NOR Flash Nor
S29GL01GS11DHA020

Mfr.#: S29GL01GS11DHA020

OMO.#: OMO-S29GL01GS11DHA020

NOR Flash Ser NOR Flash Memory 20
S29GL01GP11TFCR205

Mfr.#: S29GL01GP11TFCR205

OMO.#: OMO-S29GL01GP11TFCR205-1151

NOR Flash No
S29GL01GT10DHA023

Mfr.#: S29GL01GT10DHA023

OMO.#: OMO-S29GL01GT10DHA023-CYPRESS-SEMICONDUCTOR

IC 1 GB FLASH MEMORY
S29GL01GT10FAI030

Mfr.#: S29GL01GT10FAI030

OMO.#: OMO-S29GL01GT10FAI030-CYPRESS-SEMICONDUCTOR

NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns Tray
S29GL01GT11DHB010

Mfr.#: S29GL01GT11DHB010

OMO.#: OMO-S29GL01GT11DHB010-CYPRESS-SEMICONDUCTOR

IC 1 GB FLASH MEMORY
S29GL01GS11TFIV23

Mfr.#: S29GL01GS11TFIV23

OMO.#: OMO-S29GL01GS11TFIV23-CYPRESS-SEMICONDUCTOR

Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, LOWEST ADDRESS SECTOR PROTECTED
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di S29GL01GS10TFI020 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
10,49 USD
10,49 USD
10
9,97 USD
99,69 USD
100
9,44 USD
944,46 USD
500
8,92 USD
4 459,95 USD
1000
8,40 USD
8 395,20 USD
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