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S29GL01GS11TFIV23

S29GL01GS11TFIV23
Mfr. #:
S29GL01GS11TFIV23
Produttore:
Cypress Semiconductor
Descrizione:
Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, LOWEST ADDRESS SECTOR PROTECTED
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
S29GL01GS11TFIV23 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
S29GL01GS11TFIV23 maggiori informazioni S29GL01GS11TFIV23 Product Details
Attributo del prodotto
Valore attributo
Produttore
Cypress Semiconductor Corp
categoria di prodotto
Memoria
Serie
GL-S
Confezione
Nastro e bobina (TR)
Pacchetto-Custodia
56-TFSOP (0.724", 18.40mm Width)
Temperatura di esercizio
-40°C ~ 85°C (TA)
Interfaccia
Parallelo
Tensione di alimentazione
1.65 V ~ 3.6 V
Pacchetto-dispositivo-fornitore
56-TSOP
Dimensione della memoria
1G (64M x 16)
Tipo di memoria
FLASH - NOR
Velocità
110ns
Formato-Memoria
VELOCE
Tags
S29GL01GS11TFIV, S29GL01GS11TFI, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS
***ical
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 56-Pin TSOP T/R
***et
1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEAT
***ark
Tape And Reel / 1G Bit, 3V, 110Ns, 56-Lead Tsop, Page Mode Flash Memory Featuring 65 Nm Mirrorbit Process Technology, Vio, Lowest Address Sector Protected
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Parte # Mfg. Descrizione Azione Prezzo
S29GL01GS11TFIV23
DISTI # V36:1790_06272102		Cypress SemiconductorNOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 56-Pin TSOP T/R
RoHS: Compliant		0
    S29GL01GS11TFIV23
    DISTI # S29GL01GS11TFIV23-ND    		Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$8.0845
    S29GL01GS11TFIV23
    DISTI # 51Y1558    		Cypress SemiconductorTAPE AND REEL / 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, LOWEST ADDRESS SECTOR PROTECTED0
    • 1200:$7.0300
    • 800:$7.3800
    • 400:$7.6200
    • 200:$7.8500
    • 1:$8.2600
    S29GL01GS11TFIV23
    DISTI # 727-29GL01GS11TFIV23    		Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant    		0
    • 1:$12.9800
    • 10:$11.8000
    • 25:$10.9200
    • 50:$10.0300
    • 250:$9.1400
    • 500:$8.5500
    • 1000:$7.8500
    Immagine Parte # Descrizione
    S29GL01GT10DHI010

    Mfr.#: S29GL01GT10DHI010

    OMO.#: OMO-S29GL01GT10DHI010

    		 NOR Flash Nor
    S29GL01GT11FHIV10

    Mfr.#: S29GL01GT11FHIV10

    OMO.#: OMO-S29GL01GT11FHIV10

    		 NOR Flash NOR
    S29GL01GS12DHVV13

    Mfr.#: S29GL01GS12DHVV13

    OMO.#: OMO-S29GL01GS12DHVV13

    		 NOR Flash NOR
    S29GL01GS10DHSS30

    Mfr.#: S29GL01GS10DHSS30

    OMO.#: OMO-S29GL01GS10DHSS30

    		 NOR Flash Nor
    S29GL01GS11DHA023

    Mfr.#: S29GL01GS11DHA023

    OMO.#: OMO-S29GL01GS11DHA023

    		 NOR Flash Ser NOR Flash Memory 20
    S29GL01GT10TFA013

    Mfr.#: S29GL01GT10TFA013

    OMO.#: OMO-S29GL01GT10TFA013-CYPRESS-SEMICONDUCTOR

    		 IC FLASH 1G PARALLEL
    S29GL01GT10FHI020

    Mfr.#: S29GL01GT10FHI020

    OMO.#: OMO-S29GL01GT10FHI020-CYPRESS-SEMICONDUCTOR

    		 IC FLASH 1G PARALLEL 64FBGA GL-T
    S29GL01GS11TFIV23

    Mfr.#: S29GL01GS11TFIV23

    OMO.#: OMO-S29GL01GS11TFIV23-CYPRESS-SEMICONDUCTOR

    		 Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, LOWEST ADDRESS SECTOR PROTECTED
    S29GL01GS11FHIV23

    Mfr.#: S29GL01GS11FHIV23

    OMO.#: OMO-S29GL01GS11FHIV23-CYPRESS-SEMICONDUCTOR

    		 IC FLASH 1G PARALLEL 64BGA GL-S
    S29GL01GS10FHSS20

    Mfr.#: S29GL01GS10FHSS20

    OMO.#: OMO-S29GL01GS10FHSS20-CYPRESS-SEMICONDUCTOR

    		 IC FLASH 1G PARALLEL 64BGA GL-S
    Disponibilità
    Azione:
    Available
    Su ordine:
    4500
    Inserisci la quantità:
    Il prezzo attuale di S29GL01GS11TFIV23 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    10,54 USD
    10,54 USD
    10
    10,02 USD
    100,18 USD
    100
    9,49 USD
    949,05 USD
    500
    8,96 USD
    4 481,65 USD
    1000
    8,44 USD
    8 436,00 USD
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