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FDMC7570S

FDMC7570S
Mfr. #:
FDMC7570S
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDMC7570S Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FDMC7570S maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
Power-33-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
25 V
Id - Corrente di scarico continua:
40 A
Rds On - Resistenza Drain-Source:
2 mOhms
Vgs th - Tensione di soglia gate-source:
1.7 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
59 W
Configurazione:
Separare
Nome depositato:
SyncFET
Confezione:
Bobina
Altezza:
0.8 mm
Lunghezza:
3.3 mm
Serie:
FDMC7570S
Tipo di transistor:
1 N-Channel
Larghezza:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
154 S
Tempo di caduta:
4.5 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
6.8 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
34 ns
Tempo di ritardo di accensione tipico:
14 ns
Unità di peso:
0.001133 oz
Tags
FDMC75, FDMC7, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Sense
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
***r Electronics
Power Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ical
Trans MOSFET N-CH 25V 34A 8-Pin PQFN T/R
***ment14 APAC
N CH MOSFET, 25V, 34A, 8-PWR56; Transist; N CH MOSFET, 25V, 34A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56
***r Electronics
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN
***ineon
Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®
***ineon SCT
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance., DIRECTFET, RoHS
***nell
MOSFET, N-CH, 30V, 192A, DIRECTFET MT-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ineon
Benefits: Ultra-low RDS(on); Low Profile (less than 0.7 mm); Dual Sided Cooling Compatible; Ultra-low Package Inductance; Optimized for high speed switching or high current switch (Power Tool); Low Conduction and Switching Losses; Compatible with existing Surface Mount Techniques; StrongIRFET | Target Applications: Battery Operated Drive; Battery Protection; eFuse; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; ORing; Point of Load SyncFET; Push-Pull
FDMx75x PowerTrench® MOSFETs & SyncFETs™
ON Semiconductor FDMx757x PowerTrench® MOSFETs and SyncFETs™ combine exceptional performance and high efficiency. The FDMC7570S and FDMC7572S PowerTrench SyncFETs are designed to minimize switching losses in power conversion applications. These SyncFETs offer low ON-resistance, maintain excellent switching performance, and add the benefit of an efficient monolithic Schottky body diode. The FDMS7578 and FDMS75780 MOSFETs improve the overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs are optimized for low gate charge, low on-resistance, fast switching speed, and body diode reverse recovery performance.
Parte # Mfg. Descrizione Azione Prezzo
FDMC7570S
DISTI # V72:2272_06337875		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R2784
  • 1000:$1.5680
  • 500:$1.7650
  • 250:$1.9130
  • 100:$2.0120
  • 25:$2.0860
  • 10:$2.3180
  • 1:$2.9931
FDMC7570S
DISTI # V36:1790_06337875		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R0
  • 3000000:$1.2090
  • 1500000:$1.2100
  • 300000:$1.2420
  • 30000:$1.2840
  • 3000:$1.2900
FDMC7570S
DISTI # FDMC7570SCT-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3251In Stock
  • 1000:$1.5710
  • 500:$1.8628
  • 100:$2.1882
  • 10:$2.6710
  • 1:$2.9700
FDMC7570S
DISTI # FDMC7570SDKR-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3251In Stock
  • 1000:$1.5710
  • 500:$1.8628
  • 100:$2.1882
  • 10:$2.6710
  • 1:$2.9700
FDMC7570S
DISTI # FDMC7570STR-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$1.3945
  • 3000:$1.4490
FDMC7570S
DISTI # 33954806		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R300000
  • 3000:$0.3375
FDMC7570S
DISTI # 32336673		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R2784
  • 5:$2.9931
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€1.2900
  • 18000:€1.3900
  • 12000:€1.4900
  • 6000:€1.7900
  • 3000:€2.1900
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R - Bulk (Alt: FDMC7570S)
Min Qty: 218
Container: Bulk		Americas - 0
  • 436:$1.3900
  • 654:$1.3900
  • 1090:$1.3900
  • 2180:$1.3900
  • 218:$1.4900
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 150000:$1.7010
  • 75000:$1.7293
  • 30000:$1.7890
  • 15000:$1.8529
  • 9000:$1.9215
  • 6000:$1.9954
  • 3000:$2.0752
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.1900
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
FDMC7570S
DISTI # 92R5533		ON SemiconductorMOSFET Transistor, N Channel, 40 A, 25 V, 0.0016 ohm, 10 V, 1.7 V0
  • 1:$1.3300
FDMC7570S
DISTI # 512-FDMC7570S		ON SemiconductorMOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
RoHS: Compliant		4253
  • 1:$2.7400
  • 10:$2.3300
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
  • 1000:$1.4500
  • 3000:$1.3800
  • 6000:$1.3200
FDMC7570SFairchild Semiconductor CorporationPower Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
RoHS: Compliant		22336
  • 1000:$1.5100
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
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Disponibilità
Azione:
Available
Su ordine:
1987
Inserisci la quantità:
Il prezzo attuale di FDMC7570S è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,74 USD
2,74 USD
10
2,33 USD
23,30 USD
100
2,02 USD
202,00 USD
250
1,92 USD
480,00 USD
500
1,72 USD
860,00 USD
1000
1,45 USD
1 450,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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