SI3900DV-T1-E3

Mfr. #:: SI3900DV-T1-E3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI3900DV-T1-E3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI3900DV-T1-E3 Datasheet SI3900DV-T1-E3 Datasheet (P4-P6)SI3900DV-T1-E3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:: SI3900DV-T1-E3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TSOP-6

Numero di canali:: 2 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 20 V

Id - Corrente di scarico continua:: 2.4 A

Rds On - Resistenza Drain-Source:: 125 mOhms

Vgs th - Tensione di soglia gate-source:: 600 mV

Vgs - Tensione Gate-Source:: 12 V

Qg - Carica cancello:: 4 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 1.15 W

Configurazione:: Dual

Modalità canale:: Aumento

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SI3

Tipo di transistor:: 2 P-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 5 S

Tempo di caduta:: 6 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 30 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 14 ns

Tempo di ritardo di accensione tipico:: 10 ns

Parte # Alias:: SI3900DV-E3

Unità di peso:: 0.000705 oz

Tags: SI3900DV-T, SI3900, SI390, SI39, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3900DV-T1-E3 Valutazioni e recensioni

V***v

Thank you!

2019-01-16

O***k

Product received all perfectly recommend!!

2019-02-08

E***v

Excellent

2019-07-02

SI3900DV-T1-E3 Descrizione

***ure Electronics: Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6

***et Europe: Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin TSOP T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2400mA; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes

***nell: MOSFET, DUAL N CH, 20V, 0.1OHM, 2A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-

SI3900DV-T1-E3 Maggiori informazioni

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI3900DV-T1-E3 DISTI # V72:2272_09216709	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R RoHS: Compliant	829	500:$0.4151 250:$0.5042 100:$0.5244 25:$0.6143 10:$0.7507 1:$0.8536
SI3900DV-T1-E3 DISTI # V36:1790_09216709	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R RoHS: Compliant	0	3000:$0.5236
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 2A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	59310In Stock	1000:$0.2769 500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 2A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	59310In Stock	1000:$0.2769 500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 2A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	57000In Stock	30000:$0.2128 15000:$0.2184 6000:$0.2268 3000:$0.2436
SI3900DV-T1-E3 DISTI # 32062116	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R RoHS: Compliant	829	18:$0.8536
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3900DV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 12000	30000:$0.2559 18000:$0.2629 12000:$0.2709 6000:$0.2819 3000:$0.2909
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R (Alt: SI3900DV-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2249 18000:€0.2419 12000:€0.2619 6000:€0.3039 3000:€0.4459
SI3900DV-T1-E3 DISTI # 65K2704	Vishay Intertechnologies	DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes	0	1000:$0.4430 500:$0.5620 250:$0.6070 100:$0.6520 50:$0.7510 25:$0.8500 1:$1.0300
SI3900DV-T1-E3 DISTI # 70026206	Vishay Siliconix	MOSFET,TSOP6 20V Dual N-Channel (D-S) Trench RoHS: Compliant	0	3000:$0.5440 6000:$0.5220 15000:$0.5110 30000:$0.4900 75000:$0.4680
SI3900DV-T1-E3/BKN DISTI # 70026358	Vishay Siliconix	MOSFET,TSOP6 20V Dual N-Channel (D-S) Trench RoHS: Compliant	0	1:$0.5700 250:$0.5400 500:$0.5100 1000:$0.4800 2000:$0.4600
SI3900DV-T1-E3 DISTI # 781-SI3900DV-E3	Vishay Intertechnologies	MOSFET TSOP6 20V DUAL N-CH (D-S) TREN RoHS: Compliant	16648	1:$1.1100 10:$0.9210 100:$0.7070 500:$0.6080 1000:$0.4790 3000:$0.4470 6000:$0.4250 9000:$0.4160
SI3900DV-T1 DISTI # 781-SI3900DV	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI3900DV-E3 RoHS: Not compliant	0
SI3900DV-T1-E3	Vishay Intertechnologies	2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	281	121:$0.3500 28:$0.5000 1:$1.0000
SI3900DV-T1-E3	Vishay Intertechnologies		2684
SI3900DV-T1-E3 DISTI # 2459244	Vishay Intertechnologies	DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP- RoHS: Compliant	0	500:$0.5220 100:$0.6600 10:$0.8600 1:$0.9800
SI3900DV-T1-E3	Vishay Intertechnologies	MOSFET TSOP6 20V DUAL N-CH (D-S) TREN RoHS: Compliant	Americas -

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Disponibilità

Azione:: 16
Su ordine:: 1999
Inserisci la quantità:

Il prezzo attuale di SI3900DV-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,11 USD~~; ~~1,11 USD~~

10: ~~0,92 USD~~; ~~9,21 USD~~

100: ~~0,71 USD~~; ~~70,70 USD~~

500: ~~0,61 USD~~; ~~304,00 USD~~

1000: ~~0,48 USD~~; ~~479,00 USD~~

Iniziare con

SI3900DV-T 4
SI3900 5
SI390 12
SI39 57
SI3 1735

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