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AIGW50N65H5XKSA1

AIGW50N65H5XKSA1
Mfr. #:
AIGW50N65H5XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors DISCRETES
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AIGW50N65H5XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AIGW50N65H5XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.66 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
270 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Confezione:
Tubo
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
AIGW50N65H5 SP001346878
Unità di peso:
0.211644 oz
Tags
AIGW5, AIGW, AIG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt, Aec-Q101, 650V, 80A, 270W, To-247 Rohs Compliant: Yes |Infineon AIGW50N65H5XKSA1
***nell
IGBT, AEC-Q101, 650V, 80A, 270W, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.66V; Power Dissipation Pd: 270W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.
***ineon SCT
TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ineon
TRENCHSTOP 5 AUTO IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. | Summary of Features: 650V blocking voltage; Max junction temperature 175C; Very low conduction and switching losses; Very low junction and case temperature; High power density design; Positive temperature coefficient in V CEsat | Benefits: 50V higher blocking voltage; Highest efficiency; High device reliability; Low temperature leads to less cooling efforts; Less system costs | Target Applications: Fast switching automotive applications; On-board charger; PFC; DC-DC converter; DC-AC converter
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descrizione Azione Prezzo
AIGW50N65H5XKSA1
DISTI # AIGW50N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V TO247-3
Min Qty: 1
Container: Tube		240In Stock
  • 1000:$3.6641
  • 500:$4.2069
  • 100:$4.8312
  • 10:$5.8350
  • 1:$6.4600
AIGW50N65H5XKSA1
DISTI # AIGW50N65H5XKSA1		Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V - Rail/Tube (Alt: AIGW50N65H5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$3.2845
  • 1440:$3.3440
  • 960:$3.4604
  • 480:$3.5901
  • 240:$3.7246
AIGW50N65H5XKSA1
DISTI # 93AC6943		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247 ROHS COMPLIANT: YES
RoHS: Compliant		240
  • 500:$3.2000
  • 250:$3.5100
  • 100:$3.6800
  • 50:$3.9600
  • 25:$4.2400
  • 10:$4.4400
  • 1:$4.9100
AIGW50N65H5XKSA1
DISTI # 726-AIGW50N65H5XKSA1		Infineon Technologies AGIGBT Transistors DISCRETES
RoHS: Compliant		204
  • 1:$6.1400
  • 10:$5.5500
  • 25:$5.3000
  • 100:$4.6000
  • 250:$4.3900
  • 500:$4.0000
AIGW50N65H5XKSA1
DISTI # 2986331		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247
RoHS: Compliant		240
  • 1000:£3.0100
  • 500:£3.1000
  • 250:£3.4000
  • 100:£3.5600
  • 10:£4.1200
  • 1:£5.2400
AIGW50N65H5XKSA1
DISTI # 2986331		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247
RoHS: Compliant		240
  • 500:$5.7300
  • 250:$6.2900
  • 100:$6.5900
  • 25:$7.6000
  • 10:$7.9500
  • 1:$8.7900
Immagine Parte # Descrizione
SZ1SMB18CAT3G

Mfr.#: SZ1SMB18CAT3G

OMO.#: OMO-SZ1SMB18CAT3G

 TVS Diodes / ESD Suppressors 18V 600W BI-DIR SZ1SMB AEC-Q101
5.0SMDJ15CA

Mfr.#: 5.0SMDJ15CA

OMO.#: OMO-5-0SMDJ15CA

 TVS Diodes / ESD Suppressors 5kW 15V 5% Bi-Directional
SZ1SMB15AT3G

Mfr.#: SZ1SMB15AT3G

OMO.#: OMO-SZ1SMB15AT3G

 TVS Diodes / ESD Suppressors 15V 600W UNI-DIR SZ1SMB AEC-Q101
STD1NK60T4

Mfr.#: STD1NK60T4

OMO.#: OMO-STD1NK60T4

 MOSFET N-Ch 600 Volt 1.0Amp Zener SuperMESH
AUIRFS3607TRL

Mfr.#: AUIRFS3607TRL

OMO.#: OMO-AUIRFS3607TRL

 MOSFET 75V 80A 9 mOhm Automotive MOSFET
B57330V2103F260

Mfr.#: B57330V2103F260

OMO.#: OMO-B57330V2103F260

 NTC Thermistors 0603 10K 1% B-3455 NTC
AUIRFS3607TRL

Mfr.#: AUIRFS3607TRL

OMO.#: OMO-AUIRFS3607TRL-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET 75V 80A 9 mOhm Automotive MOSFET
SZ1SMB15AT3G

Mfr.#: SZ1SMB15AT3G

OMO.#: OMO-SZ1SMB15AT3G-LITTELFUSE

 TVS Diodes - Transient Voltage Suppressors ZEN SMB TVS 600W 15V SPCL
SZ1SMB18CAT3G

Mfr.#: SZ1SMB18CAT3G

OMO.#: OMO-SZ1SMB18CAT3G-LITTELFUSE

 Zener Diodes ZEN SMB TVS CLP 600W
5.0SMDJ15CA

Mfr.#: 5.0SMDJ15CA

OMO.#: OMO-5-0SMDJ15CA-LITTELFUSE

 TVS Diodes - Transient Voltage Suppressors TVS Diode SMC Suf MT
Disponibilità
Azione:
234
Su ordine:
2217
Inserisci la quantità:
Il prezzo attuale di AIGW50N65H5XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
6,14 USD
6,14 USD
10
5,55 USD
55,50 USD
25
5,30 USD
132,50 USD
100
4,60 USD
460,00 USD
250
4,39 USD
1 097,50 USD
500
4,00 USD
2 000,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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