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SIHD7N60E-GE3

SIHD7N60E-GE3
Mfr. #:
SIHD7N60E-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 600V 7A TO-252
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHD7N60E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHD7N60E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin DPAK
***ure Electronics
MOSFET 600V 600MOHM@10V 7A N-CH E-SRS
***ment14 APAC
MOSFET, N CH, 575V, 7A, TO-252-3
***i-Key
MOSFET N-CH 600V 7A TO-252
***ark
N-CHANNEL 600V
***nell
MOSFET, N-CH, 600V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHD7N60E-GE3
DISTI # V99:2348_09218416		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		3000
  • 5000:$0.8775
  • 2500:$0.9173
  • 1000:$0.9386
  • 500:$1.1127
  • 100:$1.2602
  • 10:$1.6590
  • 1:$2.1913
SIHD7N60E-GE3
DISTI # V36:1790_09218416		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
  • 3000000:$0.8836
  • 1500000:$0.8861
  • 300000:$1.1050
  • 30000:$1.4870
  • 3000:$1.5500
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk		1355In Stock
  • 5000:$0.8845
  • 2500:$0.9185
  • 1000:$0.9866
  • 500:$1.1907
  • 100:$1.4493
  • 10:$1.8030
  • 1:$2.0100
SIHD7N60E-GE3
DISTI # 27527136		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		3000
  • 7:$2.1913
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK (Alt: SIHD7N60E-GE3)
RoHS: Compliant
Min Qty: 3000		Europe - 2475
  • 30000:€0.7659
  • 18000:€0.8009
  • 12000:€0.9059
  • 6000:€1.1169
  • 3000:€1.5569
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SIHD7N60E-GE3
    DISTI # 63W4108    		Vishay IntertechnologiesPower MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes2593
    • 500:$1.1400
    • 100:$1.3000
    • 50:$1.4300
    • 25:$1.5600
    • 10:$1.6900
    • 1:$2.0300
    SIHD7N60E-GE3
    DISTI # 78-SIHD7N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		1048
    • 1:$2.0100
    • 10:$1.6700
    • 100:$1.2900
    • 500:$1.1300
    SIHD7N60E-E3
    DISTI # 78-SIHD7N60E-E3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		0
    • 3000:$0.8750
    • 6000:$0.8430
    • 9000:$0.8100
    SIHD7N60E-GE3
    DISTI # 2283642    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, DPAK
    RoHS: Compliant    		2293
    • 5000:$1.3700
    • 2500:$1.3900
    • 1000:$1.4900
    • 500:$1.8000
    • 100:$2.1900
    • 10:$2.7200
    • 1:$3.0300
    SIHD7N60E-GE3
    DISTI # 2283642    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, DPAK2304
    • 500:£0.7760
    • 250:£0.8330
    • 100:£0.8880
    • 25:£1.1500
    • 5:£1.3900
    SIHD7N60E-GE3
    DISTI # XSKDRABV0041556    		Vishay Intertechnologies 
    RoHS: Compliant    		2400 in Stock0 on Order
    • 2400:$1.0700
    • 435:$1.1500
    SIHD7N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		3000
      SIHD7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
      RoHS: Compliant      		Americas - 3000
      • 50:$1.2450
      • 100:$1.1020
      • 250:$1.0020
      • 500:$0.9800
      • 1000:$0.9260
      Immagine Parte # Descrizione
      SIHD7N60E-GE3

      Mfr.#: SIHD7N60E-GE3

      OMO.#: OMO-SIHD7N60E-GE3

      		 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
      SIHD7N60ET4-GE3

      Mfr.#: SIHD7N60ET4-GE3

      OMO.#: OMO-SIHD7N60ET4-GE3

      		 MOSFET 600V Vds E Series DPAK TO-252
      SIHD7N60E-E3

      Mfr.#: SIHD7N60E-E3

      OMO.#: OMO-SIHD7N60E-E3

      		 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
      SIHD7N60ET-GE3

      Mfr.#: SIHD7N60ET-GE3

      OMO.#: OMO-SIHD7N60ET-GE3

      		 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
      SIHD7N60ETR-GE3

      Mfr.#: SIHD7N60ETR-GE3

      OMO.#: OMO-SIHD7N60ETR-GE3-317

      		 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
      SIHD7N60E-E3

      Mfr.#: SIHD7N60E-E3

      OMO.#: OMO-SIHD7N60E-E3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
      SIHD7N60ET-GE3

      Mfr.#: SIHD7N60ET-GE3

      OMO.#: OMO-SIHD7N60ET-GE3-317

      		 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
      SIHD7N60E

      Mfr.#: SIHD7N60E

      OMO.#: OMO-SIHD7N60E-1190

      		 Nuovo e originale
      SIHD7N60E-GE3

      Mfr.#: SIHD7N60E-GE3

      OMO.#: OMO-SIHD7N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 7A TO-252
      SIHD7N60EGE3

      Mfr.#: SIHD7N60EGE3

      OMO.#: OMO-SIHD7N60EGE3-1190

      		 Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      Disponibilità
      Azione:
      Available
      Su ordine:
      5500
      Inserisci la quantità:
      Il prezzo attuale di SIHD7N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,31 USD
      1,31 USD
      10
      1,24 USD
      12,40 USD
      100
      1,18 USD
      117,50 USD
      500
      1,11 USD
      554,85 USD
      1000
      1,04 USD
      1 044,40 USD
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