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IRFR9N20DTRLPBF

IRFR9N20DTRLPBF
Mfr. #:
IRFR9N20DTRLPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 200V 9.4A DPAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFR9N20DTRLPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRFR9N20DTRLPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Raddrizzatore internazionale
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
86 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
9.3 ns
Ora di alzarsi
16 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
9.4 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Resistenza
380 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
13 ns
Tempo di ritardo all'accensione tipico
7.5 ns
Qg-Gate-Carica
18 nC
Transconduttanza diretta-Min
4.3 S
Modalità canale
Aumento
Tags
IRFR9N20DT, IRFR9N, IRFR9, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRFR9N20DTRLPBF
DISTI # 31236910		Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		6000
  • 3000:$0.3994
IRFR9N20DTRLPBF
DISTI # IRFR9N20DTRLPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 9.4A DPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.4813
IRFR9N20DTRLPBF
DISTI # C1S322000604513		Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		6000
  • 3000:$0.5170
IRFR9N20DTRLPBF
DISTI # IRFR9N20DTRLPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR9N20DTRLPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    IRFR9N20DTRLPBF
    DISTI # IRFR9N20DTRLPBF    		Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR9N20DTRLPBF)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.3599
    • 6000:$0.3469
    • 12000:$0.3339
    • 18000:$0.3229
    • 30000:$0.3169
    IRFR9N20DTRLPBF
    DISTI # 70019739    		Infineon Technologies AGMOSFET,200V,9.4A,380 MOHM,18 NC QG,D-PAK
    RoHS: Compliant    		0
    • 3000:$1.3100
    • 6000:$1.2840
    • 15000:$1.2450
    • 30000:$1.1920
    • 75000:$1.1140
    IRFR9N20DTRLPBF
    DISTI # 942-IRFR9N20DTRLPBF    		Infineon Technologies AGMOSFET MOSFT 200V 9.4A 380mOhm 18nC
    RoHS: Compliant    		1410
    • 1:$1.0300
    • 10:$0.8750
    • 100:$0.6720
    • 500:$0.5940
    • 1000:$0.4690
    Immagine Parte # Descrizione
    IRFR9N20DTRPBF

    Mfr.#: IRFR9N20DTRPBF

    OMO.#: OMO-IRFR9N20DTRPBF

    		 MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
    IRFR9N20DTRLPBF

    Mfr.#: IRFR9N20DTRLPBF

    OMO.#: OMO-IRFR9N20DTRLPBF

    		 MOSFET MOSFT 200V 9.4A 380mOhm 18nC
    IRFR9N20DPBF

    Mfr.#: IRFR9N20DPBF

    OMO.#: OMO-IRFR9N20DPBF

    		 MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
    IRFR9N20DPBF

    Mfr.#: IRFR9N20DPBF

    OMO.#: OMO-IRFR9N20DPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 9.4A DPAK
    IRFR9N20DTR

    Mfr.#: IRFR9N20DTR

    OMO.#: OMO-IRFR9N20DTR-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 9.4A DPAK
    IRFR9N20DTRL

    Mfr.#: IRFR9N20DTRL

    OMO.#: OMO-IRFR9N20DTRL-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 9.4A DPAK
    IRFR9N20DTRR

    Mfr.#: IRFR9N20DTRR

    OMO.#: OMO-IRFR9N20DTRR-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 9.4A DPAK
    IRFR9N20DTRLPBF

    Mfr.#: IRFR9N20DTRLPBF

    OMO.#: OMO-IRFR9N20DTRLPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 9.4A DPAK
    IRFR9N20DTRPBF

    Mfr.#: IRFR9N20DTRPBF

    OMO.#: OMO-IRFR9N20DTRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 9.4A DPAK
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di IRFR9N20DTRLPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,48 USD
    0,48 USD
    10
    0,45 USD
    4,52 USD
    100
    0,43 USD
    42,78 USD
    500
    0,40 USD
    202,00 USD
    1000
    0,38 USD
    380,30 USD
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