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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPI110N20N3GAKSA1 DISTI # 30705909 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 376 |
|
| IPI110N20N3GAKSA1 DISTI # IPI110N20N3GAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
|
| IPI110N20N3GAKSA1 DISTI # V36:1790_06377971 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 0 |
|
| IPI110N20N3 G DISTI # IPI110N20N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI110N20N3GAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPI110N20N3 G DISTI # SP000714304 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-262 (Alt: SP000714304) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPI110N20N3 G DISTI # 726-IPI110N20N3G | Infineon Technologies AG | MOSFET N-Ch 200V 88A I2PAK-3 OptiMOS 3 RoHS: Compliant | 484 |
|
| IPI110N20N3GAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 6680 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPI110N20N3 G OMO.#: OMO-IPI110N20N3-G |
MOSFET N-Ch 200V 88A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI110N20N3G OMO.#: OMO-IPI110N20N3G-1190 |
Nuovo e originale |
|
|
Mfr.#: IPI110N20N3G , 2SD2436-S |
Nuovo e originale |
|
Mfr.#: IPI110N20N3GAKSA1 |
MOSFET N-CH 200V 88A TO262-3 |