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IXFR120N20

IXFR120N20
Mfr. #:
IXFR120N20
Produttore:
Littelfuse
Descrizione:
MOSFET 200V 105A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFR120N20 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
200 V
Id - Corrente di scarico continua:
105 A
Rds On - Resistenza Drain-Source:
17 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
400 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
HyperFET
Confezione:
Tubo
Altezza:
21.34 mm
Lunghezza:
16.13 mm
Serie:
IXFR120N20
Tipo di transistor:
1 N-Channel
Larghezza:
5.21 mm
Marca:
IXYS
Transconduttanza diretta - Min:
70 S
Tempo di caduta:
35 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
65 ns
Quantità confezione di fabbrica:
30
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
110 ns
Tempo di ritardo di accensione tipico:
40 ns
Unità di peso:
0.186952 oz
Tags
IXFR12, IXFR1, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 200V 105A 3-Pin(3+Tab) ISOPLUS 247
***ure Electronics
Single N-Channel 200 V 17 mOhm 400 W Power Mosfet - ISOPLUS247
***i-Key
MOSFET N-CH 200V 105A ISOPLUS247
***ource
HiPerFETTM Power MOSFETs ISOPLUS247
***ure Electronics
IPP120N20NFD Series 200 V 84 A OptiMOS™FD Power Transistor MOSFET - TO-220-3
***ical
Trans MOSFET N-CH 200V 84A Automotive 3-Pin(3+Tab) TO-220 Tube
***nell
MOSFET, N-CH, 200V, 84A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
***emi
N-Channel UltraFET Power MOSFET 150V, 75A, 16mΩ
***ure Electronics
N-Channel 150 V 0.016 Ohm Flange Mount UltraFET Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 75A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:500W; No. of Pins:3Pins RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***emi
N-Channel UltraFET® Power MOSFET 150V, 75A, 13mΩ
***ical
Trans MOSFET N-CH 150V 75A Automotive 3-Pin(3+Tab) TO-247 Tube
***ser
MOSFETs 75a, 150V, 0.016 Ohm N-Ch MOSFET
***i-Key Marketplace
MOSFET N-CH 150V 75A TO247-3
***el Electronic
IC WHITE LED DRIVER 40SSOP
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
*** Electronics
In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 375 W
***(Formerly Allied Electronics)
MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free
***roFlash
Power Field-Effect Transistor, 76A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N Channel Mosfet, 200V, 76A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:76A; Transistor Mounting:through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:200V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***ure Electronics
Single N-Channel 250 V 17.5 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 250V 93A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 250V 93A TO-247AC
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***roFlash
Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N-CH 250V 93A TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:250V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Power Dissipation Pd:520W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Parte # Mfg. Descrizione Azione Prezzo
IXFR120N20
DISTI # V36:1790_17758949		IXYS CorporationTrans MOSFET N-CH Si 200V 105A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		28
  • 10:$18.2290
  • 1:$18.3210
IXFR120N20
DISTI # IXFR120N20-ND		IXYS CorporationMOSFET N-CH 200V 105A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$16.6130
IXFR120N20
DISTI # 32728490		IXYS CorporationTrans MOSFET N-CH Si 200V 105A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		28
  • 10:$19.5962
  • 1:$19.7045
IXFR120N20
DISTI # 747-IXFR120N20		IXYS CorporationMOSFET 200V 105A
RoHS: Compliant		0
    IXFR120N20  2
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      Disponibilità
      Azione:
      Available
      Su ordine:
      5000
      Inserisci la quantità:
      Il prezzo attuale di IXFR120N20 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      300
      18,13 USD
      5 439,00 USD
      510
      16,75 USD
      8 542,50 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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