SIR812DP-T1-GE3

SIR812DP-T1-GE3
Mfr. #:
SIR812DP-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 30V 60A 104W 1.45mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIR812DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR812DP-T1-GE3 DatasheetSIR812DP-T1-GE3 Datasheet (P4-P6)SIR812DP-T1-GE3 Datasheet (P7-P9)SIR812DP-T1-GE3 Datasheet (P10-P12)SIR812DP-T1-GE3 Datasheet (P13)
ECAD Model:
Maggiori informazioni:
SIR812DP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Nome depositato:
TrenchFET, PowerPAK
Confezione:
Bobina
Serie:
SIGNORE
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SIR812DP-GE3
Unità di peso:
0.017870 oz
Tags
SIR81, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 30V, 60A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
*** Devices
TRANS, SBU, TED, DPN, SIR812DP
***nell
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SIR812DP N-Channel TrenchFET® Gen IV Power MOSFET
Vishay Siliconix's SiR812DP is a 30V N-Channel TrenchFET® Power MOSFET. SiR812DP 30V N-Channel TrenchFET Power MOSFET offers a low on-resistance of 0.00165 Ohms and 60 A continuous drain current. Available in the PowerPAK SO-8 package and 100% Rg and UIS tested, SiR812DP is well-suited for motor control, industrial, load switch, and ORing applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.7238
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 48.9A 8-Pin PowerPAK SO T/R (Alt: SIR812DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIR812DP-T1-GE3
    DISTI # 99W9564
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$0.6960
    • 3000:$0.6910
    • 6000:$0.6580
    • 12000:$0.5830
    SIR812DP-T1-GE3
    DISTI # 04X9744
    Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$1.3600
    • 10:$1.3200
    • 100:$1.0400
    • 250:$0.9870
    • 500:$0.9220
    • 1000:$0.7380
    SIR812DP-T1-GE3
    DISTI # 78-SIR812DP-T1-GE3
    Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant
    436
    • 1:$1.6500
    • 10:$1.3600
    • 100:$1.0400
    • 500:$0.8940
    • 1000:$0.7850
    • 3000:$0.7840
    SIR812DP-T1-GE3
    DISTI # 2283689
    Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
    RoHS: Compliant
    4
    • 5:£1.1300
    • 25:£1.0300
    • 100:£0.7870
    • 250:£0.7320
    • 500:£0.6760
    SIR812DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant
    Americas -
      SIR812DP-T1-GE3
      DISTI # 2283689
      Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
      RoHS: Compliant
      4
      • 1:$2.6200
      • 10:$2.1600
      • 100:$1.6500
      • 500:$1.4200
      • 1000:$1.2400
      • 3000:$1.2400
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      Mfr.#: 503960-0694

      OMO.#: OMO-503960-0694-404

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      Disponibilità
      Azione:
      Available
      Su ordine:
      5000
      Inserisci la quantità:
      Il prezzo attuale di SIR812DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,64 USD
      1,64 USD
      10
      1,35 USD
      13,50 USD
      100
      1,03 USD
      103,00 USD
      500
      0,89 USD
      446,50 USD
      1000
      0,70 USD
      704,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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