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STU6NF10

STU6NF10
Mfr. #:
STU6NF10
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-Ch, 100V-0.22ohms 6A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STU6NF10 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STU6NF10 DatasheetSTU6NF10 Datasheet (P4-P6)STU6NF10 Datasheet (P7-P9)STU6NF10 Datasheet (P10-P12)STU6NF10 Datasheet (P13-P14)
ECAD Model:
Maggiori informazioni:
STU6NF10 maggiori informazioni STU6NF10 Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-251-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
6 A
Rds On - Resistenza Drain-Source:
250 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
30 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
STRIPFET
Confezione:
Tubo
Serie:
STU6NF10
Tipo di transistor:
1 N-Channel
Marca:
STMicroelectronics
Tempo di caduta:
3 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
10 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
20 ns
Tempo di ritardo di accensione tipico:
6 ns
Unità di peso:
0.139332 oz
Tags
STU6N, STU6, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 100V 6A IPAK
***r Electronics
Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ure Electronics
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***ark
N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
***ure Electronics
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***SIT Distribution GmbH
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
***ment14 APAC
MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 32W 28ns
***Yang
Trans MOSFET N-CH 100V 8.4A 3-Pin(3+Tab) IPAK Rail - Bulk
***inecomponents.com
N-CH/100V/8.4A/0.2OHM/Substitute of IRFU120TU & IRFU120A
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.4A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK
***ark
MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
***r Electronics
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
***ineon SCT
-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK
***SIT Distribution GmbH
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N-CH, 100V, 4.3A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descrizione Azione Prezzo
STU6NF10
DISTI # V36:1790_06567881		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R
RoHS: Compliant		0
    STU6NF10
    DISTI # 497-12700-5-ND    		STMicroelectronicsMOSFET N-CH 100V 6A IPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		655In Stock
    • 5025:$0.5077
    • 2550:$0.5344
    • 525:$0.7252
    • 150:$0.8779
    • 75:$1.0688
    • 10:$1.1260
    • 1:$1.2600
    STU6NF10
    DISTI # STU6NF10    		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R (Alt: STU6NF10)
    RoHS: Compliant
    Min Qty: 75
    Container: Tape and Reel    		Europe - 0
    • 750:€0.1969
    • 450:€0.2259
    • 300:€0.2599
    • 150:€0.3189
    • 75:€0.3999
    STU6NF10
    DISTI # STU6NF10    		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R - Rail/Tube (Alt: STU6NF10)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube    		Americas - 0
    • 30000:$0.4429
    • 15000:$0.4519
    • 9000:$0.4729
    • 6000:$0.4949
    • 3000:$0.5199
    STU6NF10
    DISTI # 57P2563    		STMicroelectronicsPTD LOW VOLTAGE0
    • 10000:$0.4520
    • 2500:$0.4650
    • 1000:$0.5760
    • 500:$0.6600
    • 100:$0.7460
    • 10:$0.9720
    • 1:$1.1400
    STU6NF10
    DISTI # 511-STU6NF10    		STMicroelectronicsMOSFET N-Ch, 100V-0.22ohms 6A
    RoHS: Compliant    		3085
    • 1:$1.1400
    • 10:$0.9720
    • 100:$0.7470
    • 500:$0.6600
    • 1000:$0.5210
    • 3000:$0.4620
    • 9000:$0.4450
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    OMO.#: OMO-ADUM110N1BRZ-ANALOG-DEVICES-INC-ADI

    		 Digital Isolators 2 Channel 3kV Digital Isolato
    2N2906A

    Mfr.#: 2N2906A

    OMO.#: OMO-2N2906A-ON-SEMICONDUCTOR

    		 PNP SS GP AMP MED PWR TRANS.
    RK73H1JTTD4702F

    Mfr.#: RK73H1JTTD4702F

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    		 Thick Film Resistors - SMD 1/10watts 47Kohms 1%
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    		 XFMR CMC MODULE AECQ BATT MNGT
    Disponibilità
    Azione:
    Available
    Su ordine:
    1985
    Inserisci la quantità:
    Il prezzo attuale di STU6NF10 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,14 USD
    1,14 USD
    10
    0,97 USD
    9,72 USD
    100
    0,75 USD
    74,70 USD
    500
    0,66 USD
    330,00 USD
    1000
    0,52 USD
    521,00 USD
    3000
    0,46 USD
    1 386,00 USD
    9000
    0,44 USD
    4 005,00 USD
    24000
    0,43 USD
    10 344,00 USD
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