PSMN8R5-108ES

PSMN8R5-108ES
Mfr. #:
PSMN8R5-108ES
Produttore:
Rochester Electronics, LLC
Descrizione:
Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PSMN8R5-108ES Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Semiconduttori NXP
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Unità di peso
0.084199 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
I2PAK-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
263 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
43 ns
Ora di alzarsi
35 ns
Vgs-Gate-Source-Voltage
4.4 V
Id-Continuo-Scarico-Corrente
100 A
Vds-Drain-Source-Breakdown-Voltage
108 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V
Rds-On-Drain-Source-Resistenza
8.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
87 ns
Tempo di ritardo all'accensione tipico
20 ns
Qg-Gate-Carica
111 nC
Modalità canale
Aumento
Tags
PSMN8R5-108, PSMN8R5-1, PSMN8R5, PSMN8, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 108V, 100A, TO-262-3
***nell
MOSFET, N CH, 108V, 100A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:108V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-226; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
Parte # Mfg. Descrizione Azione Prezzo
PSMN8R5-108ESQ
DISTI # 568-11432-5-ND
NXP SemiconductorsMOSFET N-CH 108V 100A I2PAK
RoHS: Compliant
Min Qty: 5000
Container: Tube
Limited Supply - Call
    PSMN8R5-108ES
    DISTI # 771-PSMN8R5-108ES
    NexperiaMOSFET N-Channel 100V 8.5mohm Fet
    RoHS: Compliant
    0
    • 5000:$1.1500
    PSMN8R5-108ESQ
    DISTI # 771-PSMN8R5-108ESQ
    NexperiaMOSFET PSMN8R5-108ES/I2PAK/STANDARD M
    RoHS: Compliant
    0
      PSMN8R5-108ESNXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      466
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ES127NXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      167
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ESQ127NXP SemiconductorsNow Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Not Compliant
      330
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      Immagine Parte # Descrizione
      PSMN8R2-80YS,115

      Mfr.#: PSMN8R2-80YS,115

      OMO.#: OMO-PSMN8R2-80YS-115

      MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
      PSMN8R0-30YLC,115

      Mfr.#: PSMN8R0-30YLC,115

      OMO.#: OMO-PSMN8R0-30YLC-115-NXP-SEMICONDUCTORS

      MOSFET N-CH 30V 54A LL LFPAK
      PSMN8R0-80YLX

      Mfr.#: PSMN8R0-80YLX

      OMO.#: OMO-PSMN8R0-80YLX-NEXPERIA

      MOSFET N-CH 80V 100A LFPAK56
      PSMN8R0-40PS

      Mfr.#: PSMN8R0-40PS

      OMO.#: OMO-PSMN8R0-40PS-1190

      MOSFET Transistor, N Channel, 77 A, 40 V, 6.2 mohm, 10 V, 3 V RoHS Compliant: Yes
      PSMN8R0-40PS127

      Mfr.#: PSMN8R0-40PS127

      OMO.#: OMO-PSMN8R0-40PS127-1190

      Now Nexperia PSMN8R0-40PS - Power Field-Effect Transistor, 77A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      PSMN8R5-100PSQ

      Mfr.#: PSMN8R5-100PSQ

      OMO.#: OMO-PSMN8R5-100PSQ-NEXPERIA

      IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH
      PSMN8R0-40BS,118

      Mfr.#: PSMN8R0-40BS,118

      OMO.#: OMO-PSMN8R0-40BS-118-NEXPERIA

      MOSFET N-CH 40V 77A D2PAK
      PSMN8R5-108ESQ127

      Mfr.#: PSMN8R5-108ESQ127

      OMO.#: OMO-PSMN8R5-108ESQ127-1190

      Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      PSMN8R5-100PSFQ

      Mfr.#: PSMN8R5-100PSFQ

      OMO.#: OMO-PSMN8R5-100PSFQ-NEXPERIA

      MOSFET N-CH 100V 98A TO220AB
      PSMN8R9-100BSEJ

      Mfr.#: PSMN8R9-100BSEJ

      OMO.#: OMO-PSMN8R9-100BSEJ-NEXPERIA

      PSMN8R9-100BSE/SOT404/D2PAK
      Disponibilità
      Azione:
      Available
      Su ordine:
      4000
      Inserisci la quantità:
      Il prezzo attuale di PSMN8R5-108ES è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,23 USD
      1,23 USD
      10
      1,17 USD
      11,68 USD
      100
      1,11 USD
      110,70 USD
      500
      1,05 USD
      522,75 USD
      1000
      0,98 USD
      984,00 USD
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