SIHB12N60E

SIHB12N60E
Mfr. #:
SIHB12N60E
Produttore:
Vishay Intertechnologies
Descrizione:
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB12N60E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
SIHB12N60E-GE3
DISTI # V36:1790_09219014
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9136
  • 500000:$0.9150
  • 100000:$0.9941
  • 10000:$1.1110
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # V99:2348_09219014
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9821
  • 500000:$0.9833
  • 100000:$1.0390
  • 10000:$1.1180
  • 1000:$1.1300
SIHB12N60ET1-GE3
DISTI # SIHB12N60ET1-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk
800In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60ET5-GE3
DISTI # SIHB12N60ET5-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk
800In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk
146In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8590
  • 6000:$0.8827
  • 4000:$0.9079
  • 2000:$0.9463
  • 1000:$0.9753
SIHB12N60E-GE3
DISTI # 68W7031
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7031)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.1800
SIHB12N60ET1-GE3
DISTI # SIHB12N60ET1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin D2PAK T/R - Bulk (Alt: SIHB12N60ET1-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk
Americas - 0
  • 8000:$0.8590
  • 4800:$0.8827
  • 3200:$0.9079
  • 1600:$0.9463
  • 800:$0.9753
SIHB12N60ET5-GE3
DISTI # SIHB12N60ET5-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin D2PAK T/R - Bulk (Alt: SIHB12N60ET5-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk
Americas - 0
  • 8000:$0.8590
  • 4800:$0.8827
  • 3200:$0.9079
  • 1600:$0.9463
  • 800:$0.9753
SIHB12N60E-GE3
DISTI # 68W7031
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 12A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant
322
  • 100:$1.0300
  • 250:$1.0300
  • 500:$1.0300
  • 25:$1.1200
  • 50:$1.1200
  • 1:$1.2200
  • 10:$1.2200
SIHB12N60E-GE3
DISTI # 68W7032
Vishay IntertechnologiesMOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant
0
  • 10000:$0.8380
  • 6000:$0.8710
  • 4000:$0.9050
  • 2000:$1.0100
  • 1000:$1.0600
  • 1:$1.1300
SIHB12N60E-GE3
DISTI # 78-SIHB12N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
840
  • 1:$1.9800
  • 10:$1.7400
  • 100:$1.3700
  • 500:$1.1700
  • 1000:$0.9710
  • 2000:$0.9040
  • 5000:$0.8910
SIHB12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
    SIHB12N60E-GE3
    DISTI # 7689300
    Vishay IntertechnologiesSIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, EA
    Min Qty: 1
    Container: Bulk
    671
    • 1:$0.7150
    SIHB12N60E-GE3
    DISTI # 1451818
    Vishay IntertechnologiesIn a Tube of 50, SIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, TU
    Min Qty: 50
    Container: Tube
    0
    • 50:$0.6980
    SIHB12N60E-GE3
    DISTI # 2364071
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
    RoHS: Compliant
    1160
    • 5000:$1.3700
    • 2500:$1.4300
    • 1000:$1.5300
    • 500:$1.8500
    • 100:$2.2500
    • 10:$2.7900
    • 1:$3.1100
    SIHB12N60E-GE3
    DISTI # 2364071
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
    RoHS: Compliant
    1065
    • 5000:£0.7190
    • 1000:£0.7450
    • 500:£0.9630
    • 250:£1.0300
    • 100:£1.1000
    • 10:£1.4300
    • 1:£1.9500
    SIHB12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    Europe - 900
      SIHB12N60EISCD²PAK/TO-2635000
        SIHB12N60ET5-GE3
        DISTI # TMOS2029
        Vishay IntertechnologiesN-CH 600V 12A 380mOhm TO-263
        RoHS: Compliant
        Stock DE - 1600Stock HK - 0Stock US - 0
        • 800:$1.3200
        • 1600:$1.2400
        • 2400:$1.1600
        • 3200:$1.0150
        Immagine Parte # Descrizione
        SIHB100N60E-GE3

        Mfr.#: SIHB100N60E-GE3

        OMO.#: OMO-SIHB100N60E-GE3

        MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
        SIHB17N80E-GE3

        Mfr.#: SIHB17N80E-GE3

        OMO.#: OMO-SIHB17N80E-GE3

        MOSFET 800V Vds 30V Vgs D2PAK (TO-263)
        SIHB10N40D-GE3

        Mfr.#: SIHB10N40D-GE3

        OMO.#: OMO-SIHB10N40D-GE3

        MOSFET 400V Vds 30V Vgs D2PAK (TO-263)
        SIHB12N60ET5-GE3

        Mfr.#: SIHB12N60ET5-GE3

        OMO.#: OMO-SIHB12N60ET5-GE3

        MOSFET N-Channel 600V
        SIHB12N65E-GE3

        Mfr.#: SIHB12N65E-GE3

        OMO.#: OMO-SIHB12N65E-GE3-VISHAY

        IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
        SIHB10N40D

        Mfr.#: SIHB10N40D

        OMO.#: OMO-SIHB10N40D-1190

        Nuovo e originale
        SIHB10N40D-GE3

        Mfr.#: SIHB10N40D-GE3

        OMO.#: OMO-SIHB10N40D-GE3-VISHAY

        MOSFET N-CH 400V 10A DPAK
        SIHB12N50C

        Mfr.#: SIHB12N50C

        OMO.#: OMO-SIHB12N50C-1190

        Nuovo e originale
        SIHB12N60E

        Mfr.#: SIHB12N60E

        OMO.#: OMO-SIHB12N60E-1190

        Nuovo e originale
        SIHB180N60E-GE3

        Mfr.#: SIHB180N60E-GE3

        OMO.#: OMO-SIHB180N60E-GE3-VISHAY

        E Series Power MOSFET D2PAK (TO-263), 180 m @ 10V
        Disponibilità
        Azione:
        Available
        Su ordine:
        5500
        Inserisci la quantità:
        Il prezzo attuale di SIHB12N60E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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        0,00 USD
        10
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        0,00 USD
        100
        0,00 USD
        0,00 USD
        500
        0,00 USD
        0,00 USD
        1000
        0,00 USD
        0,00 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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