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IRF6662TR1PBF

IRF6662TR1PBF
Mfr. #:
IRF6662TR1PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET MOSFT 100V 47A 22mOhm 22nC Qg
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF6662TR1PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6662TR1PBF DatasheetIRF6662TR1PBF Datasheet (P4-P6)IRF6662TR1PBF Datasheet (P7-P9)IRF6662TR1PBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DirectFET-MZ
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
8.3 A
Rds On - Resistenza Drain-Source:
17.5 mOhms
Vgs th - Tensione di soglia gate-source:
4.9 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
22 nC
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
89 W
Configurazione:
Separare
Confezione:
Bobina
Altezza:
0.7 mm
Lunghezza:
6.35 mm
Tipo di transistor:
1 N-Channel
Larghezza:
5.05 mm
Marca:
Infineon / IR
Transconduttanza diretta - Min:
11 S
Tempo di caduta:
5.9 ns
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
7.5 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001559718
Unità di peso:
0.035274 oz
Tags
IRF6662, IRF666, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 17.5 Milliohms; Id 8.3A; Mz; Pd 2.8W; Vgs +/-20
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power Dissipation Pd:2.8mW; Transistor Case Style:DirectFET MZ; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:39mJ; Base Number:6662; Cont Current Id @ 70°C:6.6A; Current Id Max:6.6A; Fall Time tf:5.9ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:66A; Rise Time:7.5ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:Surface Mount Device; Voltage Vds:25V; Voltage Vds Typ:100V; Voltage Vgs Max:3.9V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
IRF6662TR1PBF
DISTI # IRF6662TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6662TR1PBF
    DISTI # IRF6662TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6662TR1PBF
      DISTI # IRF6662TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6662TR1PBF
        DISTI # 70017404        		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 17.5 Milliohms,ID 8.3A,MZ,PD 2.8W,VGS +/-20
        RoHS: Compliant        		0
        • 1000:$1.9400
        • 2000:$1.7600
        IRF6662TR1PBF
        DISTI # 942-IRF6662TR1PBF        		Infineon Technologies AGMOSFET MOSFT 100V 47A 22mOhm 22nC Qg
        RoHS: Compliant        		0
          IRF6662TR1PBF
          DISTI # 1388570          		Infineon Technologies AGMOSFET, N, DIRECTFET, MZ
          RoHS: Compliant          		0
          • 2000:$2.3100
          • 1000:$2.4800
          • 500:$2.8000
          • 100:$3.1300
          • 10:$3.8700
          • 1:$4.7000
          Immagine Parte # Descrizione
          IRF6662TRPBF

          Mfr.#: IRF6662TRPBF

          OMO.#: OMO-IRF6662TRPBF

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          Mfr.#: IRF6665TRPBF.

          OMO.#: OMO-IRF6665TRPBF--1190

          		 Nuovo e originale
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          Mfr.#: IRF6665TR1

          OMO.#: OMO-IRF6665TR1-INFINEON-TECHNOLOGIES

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          Mfr.#: IRF6665TR1PBF

          OMO.#: OMO-IRF6665TR1PBF-INFINEON-TECHNOLOGIES

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          IRF6668

          Mfr.#: IRF6668

          OMO.#: OMO-IRF6668-1190

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          IRF6668TR

          Mfr.#: IRF6668TR

          OMO.#: OMO-IRF6668TR-1190

          		 Nuovo e originale
          IRF6668TR1PBF

          Mfr.#: IRF6668TR1PBF

          OMO.#: OMO-IRF6668TR1PBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 80V 55A DIRECTFET
          IRF6662TRPBF

          Mfr.#: IRF6662TRPBF

          OMO.#: OMO-IRF6662TRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ
          Disponibilità
          Azione:
          Available
          Su ordine:
          5000
          Inserisci la quantità:
          Il prezzo attuale di IRF6662TR1PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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