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IRFS4321-7PPBF

IRFS4321-7PPBF
Mfr. #:
IRFS4321-7PPBF
Produttore:
Infineon / IR
Descrizione:
MOSFET TRENCH MOSFET - PACKAGE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFS4321-7PPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4321-7PPBF DatasheetIRFS4321-7PPBF Datasheet (P4-P6)IRFS4321-7PPBF Datasheet (P7-P9)IRFS4321-7PPBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Configurazione:
Separare
Confezione:
Tubo
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Tipo di transistor:
1 N-channel
Larghezza:
3.9 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Parte # Alias:
SP001568032
Unità di peso:
0.002610 oz
Tags
IRFS4321-7, IRFS432, IRFS43, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***ark
Trench Mosfet - D2Pak-7P, TUBE
***ineon
Benefits: Low Rdson Reduces Losses; Low Gate Charge Improves the Switching Performance; Improved Diode Recovery Improves Switching and EMI Performance; 30V Gate Voltage Rating Improves Robustness; Fully Characterized Avalanche SOA | Target Applications: Battery Operated Drive
***ure Electronics
Single N-Channel 150 V 11.8 mOhm 110 nC HEXFET® Power Mosfet - D2PAK-7
*** Source Electronics
Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK T/R / MOSFET N-CH 150V 105A D2PAK-7
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***nell
MOSFET, N-CH, 150V, 105A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 105A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ure Electronics
Single N-Channel 150 V 14.7 mOhm 71 nC HEXFET® Power Mosfet - D2PAK-7
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***p One Stop
Trans MOSFET N-CH 150V 86A 7-Pin(6+Tab) D2PAK T/R
***ineon
Benefits: Low Rdson Reduces Losses; Low Gate Charge Improves the Switching Performance; Improved Diode Recovery Improves Switching and EMI Performance; 30V Gate Voltage Rating Improves Robustness; Fully Characterized Avalanche SOA | Target Applications: Battery Operated Drive
***ineon SCT
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
***Yang
Trans MOSFET N-CH 150V 105A 7-Pin D2PAK Tube - Rail/Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.8pF 50Volts C0G +/-0.25pF
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.0118Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V Rohs Compliant: Yes
***icroelectronics
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 100V 110A 7-Pin(6+Tab) H2PAK T/R
*** Electronic Components
MOSFET N-CH 100V 49mOhm 110A STripFET VII
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***emi
N-Channel PowerTrench® MOSFET 150V, 130A, 6.4mΩ
***Yang
N-Channel 150V 130A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D²PAK (TO-263) - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 130A I(D), 150V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
***Yang
Transistor MOSFET N-CH 80V 270A 7-Pin TO-263 T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 80V, 270A, 1.7mΩ
***ure Electronics
FDB0190 Series 80 V 270 A 1.7 mOhm N-Channel PowerTrench Mosfet - D²PAK-7
***ark
Mosfet, N-Ch, 80V, 270A, 175Deg C, 250W; Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:270A; On Resistance Rds(On):0.0013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 270A I(D), 80V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Parte # Mfg. Descrizione Azione Prezzo
IRFS4321-7PPBF
DISTI # IRFS4321-7PPBF-ND		Infineon Technologies AGMOSFET N-CH 150V 86A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tube		Limited Supply - Call
    IRFS4321-7PPBF
    DISTI # 942-IRFS4321-7PPBF    		Infineon Technologies AGMOSFET TRENCH MOSFET - PACKAGE
    RoHS: Compliant    		0
      Immagine Parte # Descrizione
      IRFS4321TRLPBF

      Mfr.#: IRFS4321TRLPBF

      OMO.#: OMO-IRFS4321TRLPBF

      		 MOSFET MOSFT 100V 96A 10mOhm 120nC Qg
      IRFS4321TRRPBF

      Mfr.#: IRFS4321TRRPBF

      OMO.#: OMO-IRFS4321TRRPBF

      		 MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC
      IRFS4321PBF

      Mfr.#: IRFS4321PBF

      OMO.#: OMO-IRFS4321PBF

      		 MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC
      IRFS4321-7PPBF

      Mfr.#: IRFS4321-7PPBF

      OMO.#: OMO-IRFS4321-7PPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 150V 86A D2PAK
      IRFS4321

      Mfr.#: IRFS4321

      OMO.#: OMO-IRFS4321-1190

      		 Nuovo e originale
      IRFS4321-7PTRRPBF

      Mfr.#: IRFS4321-7PTRRPBF

      OMO.#: OMO-IRFS4321-7PTRRPBF-1190

      		 Nuovo e originale
      IRFS4321PBF

      Mfr.#: IRFS4321PBF

      OMO.#: OMO-IRFS4321PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 150V 83A D2PAK
      IRFS4321PBF.

      Mfr.#: IRFS4321PBF.

      OMO.#: OMO-IRFS4321PBF--1190

      		 Nuovo e originale
      IRFS4321TRLPBF,IRFS4321

      Mfr.#: IRFS4321TRLPBF,IRFS4321

      OMO.#: OMO-IRFS4321TRLPBF-IRFS4321-1190

      		 Nuovo e originale
      IRFS4321TRLPBF,IRFS4321P

      Mfr.#: IRFS4321TRLPBF,IRFS4321P

      OMO.#: OMO-IRFS4321TRLPBF-IRFS4321P-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      2000
      Inserisci la quantità:
      Il prezzo attuale di IRFS4321-7PPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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