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IXTP05N100P

IXTP05N100P
Mfr. #:
IXTP05N100P
Produttore:
Littelfuse
Descrizione:
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTP05N100P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP05N100P DatasheetIXTP05N100P Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
1 kV
Id - Corrente di scarico continua:
500 mA
Rds On - Resistenza Drain-Source:
30 Ohms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
8.1 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
50 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Prodotto:
MOSFET
Serie:
IXTP05N100
Tipo di transistor:
1 N-Channel
Marca:
IXYS
Tempo di caduta:
15 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
15 ns
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
20 ns
Tempo di ritardo di accensione tipico:
6 ns
Unità di peso:
0.012346 oz
Tags
IXTP05, IXTP0, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
***i-Key
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***icroelectronics
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***nell
MOSFET, N CH, 1000V, 6.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V;
***S.I.T. Europe - USA - Asia
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***icroelectronics
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***roFlash
Mosfet Transistor, N Channel, 1.75 A, 1 Kv, 2.7 Ohm, 30 V, 3.75 V Rohs Compliant: Yes
***ure Electronics
N-Channel 1000 V 3.7 Ohm SuperMESH3 Power MosFet TO-220FP
***nell
MOSFET, N CH, 1KV, 3.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.75A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; P
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 1000V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ical
Trans MOSFET N-CH 1KV 2.5A 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
***ure Electronics
N-channel 1000 V 6 Ohm 25 W Through Hole SuperMESH™ Power Mosfet - TO-220FP
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 1KV, 2.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
***hard Electronics
In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C
***Yang
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
***ure Electronics
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
***enic
900V 4A 47W 4.2´Î@10V2A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
***ow.cn
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
***r Electronics
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descrizione Azione Prezzo
IXTP05N100P
DISTI # IXTP05N100P-ND		IXYS CorporationMOSFET N-CH 1000V 500MA TO-263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$1.8700
IXTP05N100P
DISTI # 747-IXTP05N100P		IXYS CorporationMOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
RoHS: Compliant		0
  • 1:$2.4200
  • 10:$2.1900
  • 25:$1.9100
  • 50:$1.7900
  • 100:$1.7600
  • 250:$1.4300
  • 500:$1.3700
  • 1000:$1.1300
  • 2500:$0.9520
Immagine Parte # Descrizione
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OMO.#: OMO-IXTP05N100-IXYS-CORPORATION

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Mfr.#: IXTP02N120P

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Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di IXTP05N100P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,42 USD
2,42 USD
10
2,19 USD
21,90 USD
25
1,91 USD
47,75 USD
50
1,79 USD
89,50 USD
100
1,76 USD
176,00 USD
250
1,43 USD
357,50 USD
500
1,37 USD
685,00 USD
1000
1,13 USD
1 130,00 USD
2500
0,95 USD
2 380,00 USD
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