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IPA028N08N3 G

IPA028N08N3 G
Mfr. #:
IPA028N08N3 G
Produttore:
Infineon Technologies
Descrizione:
Darlington Transistors MOSFET N-Ch 80V 89A TO220FP-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPA028N08N3 G Scheda dati
Consegna:
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ECAD Model:
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IPA028N08N3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IPA028N08
Confezione
Tubo
Alias ​​parziali
IPA028N08N3GXK IPA028N08N3GXKSA1 SP000446770
Unità di peso
0.211644 oz
Stile di montaggio
Foro passante
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
42 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
26 ns
Ora di alzarsi
59 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
89 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Rds-On-Drain-Source-Resistenza
2.8 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
77 ns
Tempo di ritardo all'accensione tipico
30 ns
Qg-Gate-Carica
50 nC
Modalità canale
Aumento
Tags
IPA028N08N3G, IPA028, IPA02, IPA0, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPA028N08N3GXKSA1
DISTI # 24713512		Infineon Technologies AGTrans MOSFET N-CH 80V 89A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		500
  • 500:$2.6724
  • 250:$2.7456
  • 100:$2.8230
  • 50:$2.9048
  • 25:$2.9915
  • 4:$3.0835
IPA028N08N3GXKSA1
DISTI # IPA028N08N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 80V 89A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		722In Stock
  • 1000:$3.4495
  • 500:$4.0901
  • 100:$5.0510
  • 10:$6.1600
  • 1:$6.9000
IPA028N08N3GXKSA1
DISTI # C1S322000468896		Infineon Technologies AGTrans MOSFET N-CH 80V 89A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		500
  • 500:$3.3400
  • 200:$4.3500
  • 50:$4.7000
  • 10:$6.2300
  • 1:$7.6800
IPA028N08N3 G
DISTI # C1S322000090163		Infineon Technologies AGTrans MOSFET N-CH 80V 89A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		4
  • 50:$2.4200
IPA028N08N3 G
DISTI # SP000446770		Infineon Technologies AGTrans MOSFET N-CH 80V 89A 3-Pin(3+Tab) TO-220FP Tube (Alt: SP000446770)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€3.7900
  • 10:€3.0900
  • 25:€2.7900
  • 50:€2.6900
  • 100:€2.5900
  • 500:€2.4900
  • 1000:€2.4900
IPA028N08N3 G
DISTI # SP000446770		Infineon Technologies AGTrans MOSFET N-CH 80V 89A 3-Pin(3+Tab) TO-220FP Tube (Alt: SP000446770)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€3.2900
  • 10:€2.9900
  • 25:€2.8900
  • 50:€2.7900
  • 100:€2.6900
  • 500:€2.5900
  • 1000:€2.3900
IPA028N08N3GXK
DISTI # IPA028N08N3GXKSA1		Infineon Technologies AGTrans MOSFET N-CH 80V 89A 3-Pin(3+Tab) TO-220FP Tube - Rail/Tube (Alt: IPA028N08N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$3.1900
  • 1000:$3.0900
  • 2000:$2.8900
  • 3000:$2.7900
  • 5000:$2.7900
IPA028N08N3GInfineon Technologies AGPower Field-Effect Transistor, 89A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		6350
  • 1000:$3.0200
  • 500:$3.1700
  • 100:$3.3000
  • 25:$3.4500
  • 1:$3.7100
IPA028N08N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 89A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		7695
  • 1000:$3.0200
  • 500:$3.1700
  • 100:$3.3000
  • 25:$3.4500
  • 1:$3.7100
IPA028N08N3 G
DISTI # 726-IPA028N08N3G		Infineon Technologies AGMOSFET N-Ch 80V 89A TO220FP-3
RoHS: Compliant		599
  • 1:$5.4400
  • 10:$4.6300
  • 100:$4.0100
  • 250:$3.8100
  • 500:$3.4200
IPA028N08N3GXKSA1
DISTI # 726-IPA028N08N3GXKSA		Infineon Technologies AGMOSFET N-Ch 80V 89A TO220FP-3
RoHS: Compliant		0
  • 1:$5.9300
  • 10:$5.0400
  • 100:$4.3700
  • 250:$4.1500
  • 500:$3.7200
IPA028N08N3GXKSA1
DISTI # 8977315P		Infineon Technologies AGMOSFET N-CHANNEL 80V 89A TO220FP TUBE, TU476
  • 10:£2.2100
Immagine Parte # Descrizione
IPA028N08N3 G

Mfr.#: IPA028N08N3 G

OMO.#: OMO-IPA028N08N3-G

 MOSFET N-Ch 80V 89A TO220FP-3
IPA028N08N3GXKSA1

Mfr.#: IPA028N08N3GXKSA1

OMO.#: OMO-IPA028N08N3GXKSA1

 MOSFET N-Ch 80V 89A TO220FP-3
IPA028N08N3GXK

Mfr.#: IPA028N08N3GXK

OMO.#: OMO-IPA028N08N3GXK-1190

 Trans MOSFET N-CH 80V 89A 3-Pin(3+Tab) TO-220FP Tube - Rail/Tube (Alt: IPA028N08N3GXKSA1)
IPA028N08N3

Mfr.#: IPA028N08N3

OMO.#: OMO-IPA028N08N3-1190

 Nuovo e originale
IPA028N08N3G

Mfr.#: IPA028N08N3G

OMO.#: OMO-IPA028N08N3G-1190

 Power Field-Effect Transistor, 89A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPA028N08N3GXKSA1

Mfr.#: IPA028N08N3GXKSA1

OMO.#: OMO-IPA028N08N3GXKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V 89A TO220-3
IPA028N08N3 G

Mfr.#: IPA028N08N3 G

OMO.#: OMO-IPA028N08N3-G-124

 Darlington Transistors MOSFET N-Ch 80V 89A TO220FP-3
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di IPA028N08N3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,63 USD
3,63 USD
10
3,45 USD
34,48 USD
100
3,27 USD
326,70 USD
500
3,09 USD
1 542,75 USD
1000
2,90 USD
2 904,00 USD
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