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SPW55N80C3FKSA1

SPW55N80C3FKSA1
Mfr. #:
SPW55N80C3FKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 850V 54.9A TO247-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SPW55N80C3FKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SPW55N80C3FKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
800 V
Id - Corrente di scarico continua:
54.9 A
Rds On - Resistenza Drain-Source:
77 mOhms
Vgs th - Tensione di soglia gate-source:
2.1 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
288 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
500 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Altezza:
21.1 mm
Lunghezza:
16.13 mm
Serie:
CoolMOS C3
Tipo di transistor:
1 N-Channel
Larghezza:
5.21 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
21 ns
Quantità confezione di fabbrica:
240
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
200 ns
Tempo di ritardo di accensione tipico:
45 ns
Parte # Alias:
SP000849356 SPW55N80C3 SPW55N8C3XK
Unità di peso:
1.340411 oz
Tags
SPW55, SPW5, SPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 85 mOhm 285 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:850V; Continuous Drain Current Id:54.9A; On Resistance Rds(On):0.077Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
SPW55N80C3FKSA1
DISTI # V99:2348_06378036		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		235
  • 720:$9.8580
  • 240:$11.3450
  • 25:$12.8690
  • 10:$13.4220
  • 1:$14.5870
SPW55N80C3FKSA1
DISTI # V36:1790_06378036		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$8.1290
  • 120000:$8.1360
  • 24000:$9.1960
  • 2400:$11.5200
  • 240:$11.9400
SPW55N80C3FKSA1
DISTI # SPW55N80C3FKSA1-ND		Infineon Technologies AGMOSFET N-CH 800V 54.9A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		47In Stock
  • 720:$10.6252
  • 240:$11.9442
  • 25:$13.5564
  • 10:$14.1430
  • 1:$15.3900
SPW55N80C3FKSA1
DISTI # 33368643		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1086
  • 2:$8.7409
SPW55N80C3FKSA1
DISTI # 33142793		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$14.6406
SPW55N80C3FKSA1
DISTI # 33157361		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		235
  • 1:$14.5870
SPW55N80C3XK
DISTI # SPW55N80C3FKSA1		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: SPW55N80C3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$8.7900
  • 1440:$8.9900
  • 960:$9.2900
  • 480:$9.5900
  • 240:$9.9900
SPW55N80C3FKSA1
DISTI # 85X7431		Infineon Technologies AGMOSFET Transistor, N Channel, 54.9 A, 850 V, 0.077 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 500:$10.2100
  • 250:$10.9200
  • 100:$11.4800
  • 50:$12.2600
  • 25:$13.0400
  • 10:$13.6000
  • 1:$14.8000
SPW55N80C3FKSA1.
DISTI # 28AC3069		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:54.9A,Drain Source Voltage Vds:850V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:500W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 500:$10.2100
  • 250:$10.9200
  • 100:$11.4800
  • 50:$12.2600
  • 25:$13.0400
  • 10:$13.6000
  • 1:$14.8000
SPW55N80C3FKSA1
DISTI # 726-SPW55N80C3FKSA1		Infineon Technologies AGMOSFET N-Ch 850V 54.9A TO247-3
RoHS: Compliant		231
  • 1:$14.6500
  • 10:$13.4700
  • 25:$12.9100
  • 100:$11.3700
  • 250:$10.8100
  • 500:$10.1100
SPW55N80C3
DISTI # 726-SPW55N80C3		Infineon Technologies AGMOSFET N-Ch 850V 54.9A TO247-3
RoHS: Compliant		0
  • 1:$14.6500
  • 10:$13.4700
  • 25:$12.9100
  • 100:$11.3700
  • 250:$10.8100
  • 500:$10.1100
SPW55N80C3FKSA1Infineon Technologies AGSingle N-Channel 800 V 85 mOhm 285 nC CoolMOS Power Mosfet - TO-247-3
RoHS: Compliant		240Tube
  • 240:$10.4100
SPW55N80C3FKSA1
DISTI # 8977677P		Infineon Technologies AGMOSFET N-CHANNEL 850V 54.9A TO247, TU194
  • 15:£10.2700
  • 6:£10.9700
SPW55N80C3FKSA1
DISTI # 8977677		Infineon Technologies AGMOSFET N-CHANNEL 850V 54.9A TO247, EA27
  • 15:£10.2700
  • 6:£10.9700
  • 1:£12.4900
SPW55N80C3FKSA1
DISTI # 2443414		Infineon Technologies AGMOSFET, N CH, 850V, 54.9A, TO-247-3203
  • 100:£8.8600
  • 50:£9.4500
  • 10:£10.0500
  • 5:£11.3900
  • 1:£11.8300
SPW55N80C3FKSA1
DISTI # 2443414		Infineon Technologies AGMOSFET, N CH, 850V, 54.9A, TO-247-3
RoHS: Compliant		191
  • 500:$15.2400
  • 250:$16.2900
  • 100:$17.1300
  • 25:$19.4600
  • 10:$20.3000
  • 1:$22.0800
SPW55N80C3FKSA1
DISTI # XSKDRABV0051999		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$12.2300
  • 240:$13.1000
Immagine Parte # Descrizione
UCC27511ADBVR

Mfr.#: UCC27511ADBVR

OMO.#: OMO-UCC27511ADBVR

 Gate Drivers Single Driver
PDZVTFTR20B

Mfr.#: PDZVTFTR20B

OMO.#: OMO-PDZVTFTR20B

 Zener Diodes 20-22.4V 20mA SOD-128; PMDTM
F423MR12W1M1B11BOMA1

Mfr.#: F423MR12W1M1B11BOMA1

OMO.#: OMO-F423MR12W1M1B11BOMA1

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IPZA60R037P7XKSA1

Mfr.#: IPZA60R037P7XKSA1

OMO.#: OMO-IPZA60R037P7XKSA1

 MOSFET HIGH POWER_NEW
7448052303

Mfr.#: 7448052303

OMO.#: OMO-7448052303

 Common Mode Chokes / Filters WE-CMBNC Type XL Nancrystl 10kHz 23A
7448062105

Mfr.#: 7448062105

OMO.#: OMO-7448062105

 Common Mode Chokes / Filters WE-CMBNC Type XXL Nancrystl 10kHz 21A
PDZVTFTR20B

Mfr.#: PDZVTFTR20B

OMO.#: OMO-PDZVTFTR20B-1190

 PDZVTF20B IS A ZENER DIODE WITH
5800-102-RC

Mfr.#: 5800-102-RC

OMO.#: OMO-5800-102-RC-BOURNS

 Fixed Inductors 1.0mH 10%
UCC27511ADBVR

Mfr.#: UCC27511ADBVR

OMO.#: OMO-UCC27511ADBVR-TEXAS-INSTRUMENTS

 SINGLE DRIVER
FFSH5065A-F155

Mfr.#: FFSH5065A-F155

OMO.#: OMO-FFSH5065A-F155-1190

 SIC DIODE TO247 650V
Disponibilità
Azione:
219
Su ordine:
2202
Inserisci la quantità:
Il prezzo attuale di SPW55N80C3FKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
14,65 USD
14,65 USD
10
13,47 USD
134,70 USD
25
12,91 USD
322,75 USD
100
11,37 USD
1 137,00 USD
250
10,81 USD
2 702,50 USD
500
10,11 USD
5 055,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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