SIHB24N65E-E3

Mfr. #:: SIHB24N65E-E3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIHB24N65E-E3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: SIHB24N65E-E3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 700 V

Id - Corrente di scarico continua:: 24 A

Rds On - Resistenza Drain-Source:: 145 mOhms

Vgs th - Tensione di soglia gate-source:: 4 V

Vgs - Tensione Gate-Source:: 30 V

Qg - Carica cancello:: 81 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 250 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Tubo

Altezza:: 4.83 mm

Lunghezza:: 10.67 mm

Serie:: E

Larghezza:: 9.65 mm

Marca:: Vishay / Siliconix

Tempo di caduta:: 69 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 84 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 70 ns

Tempo di ritardo di accensione tipico:: 24 ns

Unità di peso:: 0.050717 oz

Tags: SIHB24, SIHB2, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB24N65E-E3 Valutazioni e recensioni

A***a

Order received. Very good.

2019-05-05

V***v

Leds received on april 6, ordered on january 30, 2019. Packed well.

2019-04-09

S***v

Not tested. The tester is delayed.

2019-03-04

N***m

Good seller. Sender fast, consistent description. Good seller. By sending shvidko, all will be sent back to the description. Delivery 24 days.

2019-03-20

SIHB24N65E-E3 Descrizione

***ark: MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain

***et Europe: Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK

***Components: MOSFET N-Channel 650V 24A D2PAK

***i-Key: MOSFET N-CH 650V 24A D2PAK

***ment14 APAC: MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Voltage Vgs Max:30V

***nell: MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHB24N65E-E3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIHB24N65E-E3 DISTI # V36:1790_09219019	Vishay Intertechnologies	Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK RoHS: Compliant	0	1000000:$2.9040 500000:$2.9060 100000:$2.9880 10000:$3.1120 1000:$3.1310
SIHB24N65E-E3 DISTI # SIHB24N65E-E3-ND	Vishay Siliconix	MOSFET N-CH 650V 24A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$3.1311
SIHB24N65E-E3 DISTI # SIHB24N65E-E3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB24N65E-E3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$2.6900 4000:$2.7900 6000:$2.7900 2000:$2.9900 1000:$3.0900
SIHB24N65E-GE3 DISTI # 78-SIHB24N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2950	1:$5.9600 10:$4.9400 100:$4.0600 250:$3.9400 500:$3.5300 1000:$2.9800 2000:$2.8300
SIHB24N65E-E3 DISTI # 781-SIHB24N65E-E3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	0	1000:$2.9800 2000:$2.8300
SIHB24N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas -	10:$3.8640

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Disponibilità

Azione:: Available
Su ordine:: 5000
Inserisci la quantità:

Il prezzo attuale di SIHB24N65E-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1000: ~~2,98 USD~~; ~~2 980,00 USD~~

2000: ~~2,83 USD~~; ~~5 660,00 USD~~

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