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FCP165N60E

FCP165N60E
Mfr. #:
FCP165N60E
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCP165N60E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FCP165N60E maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
23 A
Rds On - Resistenza Drain-Source:
165 mOhms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
20 V, 30 V
Qg - Carica cancello:
57 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
227 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
SuperFET II
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCP165N60E
Tipo di transistor:
1 N-Channel
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
20 S
Tempo di caduta:
18 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
18 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
100 ns
Tempo di ritardo di accensione tipico:
22 ns
Unità di peso:
0.063493 oz
Tags
FCP165, FCP16, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 23A, 165mΩ, TO-220
***ark
SuperFET2 600V 165mohm slow version - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220
***et Europe
SUPERFET2 600V 165MOHM SLOW VERSION
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 23A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.132ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:227W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 23A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Parte # Mfg. Descrizione Azione Prezzo
FCP165N60E
DISTI # V99:2348_14141720		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 800:$1.6660
  • 100:$2.0030
  • 25:$2.2630
  • 10:$2.2860
  • 1:$2.9832
FCP165N60E
DISTI # FCP165N60E-ND		ON SemiconductorMOSFET N-CH 600V 23A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		800In Stock
  • 800:$1.7984
  • 100:$2.1126
  • 25:$2.4376
  • 10:$2.5780
  • 1:$2.8700
FCP165N60E
DISTI # 25887488		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 5:$2.9832
FCP165N60E
DISTI # FCP165N60E		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.2900
  • 1000:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.7900
FCP165N60E
DISTI # FCP165N60E		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION - Rail/Tube (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$1.1900
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
FCP165N60E
DISTI # 84Y5816		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.132ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes666
  • 500:$1.7300
  • 250:$1.9200
  • 100:$2.0300
  • 50:$2.1300
  • 25:$2.2400
  • 10:$2.3400
  • 1:$2.7600
FCP165N60E
DISTI # 512-FCP165N60E		ON SemiconductorMOSFET 600V 23A N-Chnl SuperFET Easy-Drive
RoHS: Compliant		95
  • 1:$2.7300
  • 10:$2.3200
  • 100:$2.0100
  • 250:$1.9000
  • 500:$1.7100
  • 1000:$1.4400
  • 2500:$1.3700
  • 5000:$1.3200
FCP165N60E
DISTI # 2565218		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3
RoHS: Compliant		666
  • 800:$2.6100
  • 100:$3.5600
  • 10:$4.3400
  • 1:$4.8600
FCP165N60E
DISTI # 2565218		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3696
  • 500:£1.1700
  • 250:£1.3100
  • 100:£1.3900
  • 10:£1.5900
  • 1:£2.1200
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 Standard Circular Connector 5P Strt Socket Plug Backshell Size 14E
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Disponibilità
Azione:
95
Su ordine:
2078
Inserisci la quantità:
Il prezzo attuale di FCP165N60E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,73 USD
2,73 USD
10
2,32 USD
23,20 USD
100
2,01 USD
201,00 USD
250
1,90 USD
475,00 USD
500
1,71 USD
855,00 USD
1000
1,44 USD
1 440,00 USD
2500
1,37 USD
3 425,00 USD
5000
1,32 USD
6 600,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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