SIR182DP-T1-RE3

Mfr. #:: SIR182DP-T1-RE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIR182DP-T1-RE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SIR182DP-T1-RE3 Datasheet SIR182DP-T1-RE3 Datasheet (P4-P6)SIR182DP-T1-RE3 Datasheet (P7-P9)SIR182DP-T1-RE3 Datasheet (P10-P12)SIR182DP-T1-RE3 Datasheet (P13)
ECAD Model:
Maggiori informazioni:: SIR182DP-T1-RE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-SO-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 60 A

Rds On - Resistenza Drain-Source:: 2.3 mOhms

Vgs th - Tensione di soglia gate-source:: 3.6 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 42.2 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 69.4 W

Configurazione:: Separare

Nome depositato:: TrenchFET, PowerPAK

Confezione:: Bobina

Serie:: SIGNORE

Marca:: Vishay / Siliconix

Tempo di caduta:: 10 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 23 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 21 ns

Tempo di ritardo di accensione tipico:: 15 ns

Tags: SIR18, SIR1, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR182DP-T1-RE3 Descrizione

***et Europe: TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R

***ical: Trans MOSFET N-CH 60V 117A 8-Pin PowerPAK SO EP T/R

***i-Key: MOSFET N-CH 60V 60A POWERPAKSO-8

***an P&S: 60V,2.8mΩ,60A,P-Ch MOSFET

***ark: Mosfet, N-Ch, 60V, 0.06A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 0.06A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Dissipation Pd:69.4W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

***nell: MOSFET, CA-N, 60V, 0,06A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.6V; Dissipazione di Potenza Pd:69.4W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)

SIR182DP-T1-RE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIR182DP-T1-RE3 DISTI # V72:2272_22521045	Vishay Intertechnologies	Trans MOSFET N-CH 60V 31.4A 8-Pin PowerPAK SO EP T/R	5880	1:$1.2444
SIR182DP-T1-RE3 DISTI # V99:2348_22521045	Vishay Intertechnologies	Trans MOSFET N-CH 60V 31.4A 8-Pin PowerPAK SO EP T/R	0	6000:$0.7856
SIR182DP-T1-RE3 DISTI # V36:1790_22521045	Vishay Intertechnologies	Trans MOSFET N-CH 60V 31.4A 8-Pin PowerPAK SO EP T/R	0	6000000:$0.7308 3000000:$0.7310 600000:$0.7413 60000:$0.7572 6000:$0.7598
SIR182DP-T1-RE3 DISTI # SIR182DP-T1-RE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5840In Stock	1000:$0.8405 500:$1.0144 100:$1.2347 10:$1.5360 1:$1.7100
SIR182DP-T1-RE3 DISTI # SIR182DP-T1-RE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5840In Stock	1000:$0.8405 500:$1.0144 100:$1.2347 10:$1.5360 1:$1.7100
SIR182DP-T1-RE3 DISTI # SIR182DP-T1-RE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$0.7316 3000:$0.7598
SIR182DP-T1-RE3 DISTI # 32654086	Vishay Intertechnologies	Trans MOSFET N-CH 60V 31.4A 8-Pin PowerPAK SO EP T/R	5880	9:$1.2444
SIR182DP-T1-RE3 DISTI # SIR182DP-T1-RE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R (Alt: SIR182DP-T1-RE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.7159 500:€0.7249 100:€0.7379 50:€0.7489 25:€0.8469 10:€1.0439 1:€1.4559
SIR182DP-T1-RE3 DISTI # SIR182DP-T1-RE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIR182DP-T1-RE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.6869 30000:$0.7059 18000:$0.7259 12000:$0.7569 6000:$0.7799
SIR182DP-T1-RE3 DISTI # 59AC7436	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET	0	10000:$0.6700 6000:$0.6970 4000:$0.7240 2000:$0.8040 1000:$0.8470 1:$0.9010
SIR182DP-T1-RE3 DISTI # 37AC0917	Vishay Intertechnologies	MOSFET, N-CH, 60V, 0.06A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes	9000	500:$0.9480 250:$1.0200 100:$1.0900 50:$1.2000 25:$1.3000 10:$1.4000 1:$1.6900
SIR182DP-T1-RE3 DISTI # 78-SIR182DP-T1-RE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	5710	1:$1.6600 10:$1.3800 100:$1.0700 500:$0.9380 1000:$0.7770 3000:$0.7230 6000:$0.6960 9000:$0.6700
SIR182DP-T1-RE3 DISTI # 2785447	Vishay Intertechnologies	MOSFET, N-CH, 60V, 0.06A, POWERPAK SO RoHS: Compliant	8990	1000:$1.2200 500:$1.2800 250:$1.5100 100:$1.8300 10:$2.3300 1:$2.8200
SIR182DP-T1-RE3 DISTI # 2785447	Vishay Intertechnologies	MOSFET, N-CH, 60V, 0.06A, POWERPAK SO	8590	500:£0.7160 250:£0.7660 100:£0.8160 10:£1.1100 1:£1.4400

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	Mfr.#: SIR184DP-T1-RE3 OMO.#: OMO-SIR184DP-T1-RE3	MOSFET 60V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SiR180DP-T1-RE3 OMO.#: OMO-SIR180DP-T1-RE3	MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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	Mfr.#: SIR180DP-T1-RE3 OMO.#: OMO-SIR180DP-T1-RE3-VISHAY	MOSFET N-CHAN 60V POWERPAK SO-8
	Mfr.#: SIR184DP-T1-RE3 OMO.#: OMO-SIR184DP-T1-RE3-VISHAY	MOSFET N-CHAN 60V POWERPAK SO-8
	Mfr.#: CRCW0603200KFKEAC OMO.#: OMO-CRCW0603200KFKEAC-VISHAY-DALE	Standard Thick Film Chip Resistors

Disponibilità

Azione:: Available
Su ordine:: 1988
Inserisci la quantità:

Il prezzo attuale di SIR182DP-T1-RE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,66 USD~~; ~~1,66 USD~~

10: ~~1,38 USD~~; ~~13,80 USD~~

100: ~~1,07 USD~~; ~~107,00 USD~~

500: ~~0,94 USD~~; ~~469,00 USD~~

1000: ~~0,78 USD~~; ~~777,00 USD~~

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SIR182DP-T1-RE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes