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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSZ215CHXTMA1 DISTI # 30726929 | Infineon Technologies AG | Trans MOSFET N/P-CH 20V 5.1A/3.2A Automotive T/R | 5000 |
|
| BSZ215CHXTMA1 DISTI # BSZ215CHXTMA1-ND | Infineon Technologies AG | MOSFET N/P-CH 20V 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSZ215CHXTMA1 DISTI # V36:1790_09156838 | Infineon Technologies AG | Trans MOSFET N/P-CH 20V 5.1A/3.2A Automotive T/R | 0 |
|
| BSZ215CHXTMA1 DISTI # BSZ215CHXTMA1 | Infineon Technologies AG | Trans MOSFET N/P-CH 20V 5.1A/3.2A 8-Pin TSDSON T/R - Bulk (Alt: BSZ215CHXTMA1) RoHS: Compliant Min Qty: 807 Container: Bulk | Americas - 0 |
|
| BSZ215CHXTMA1 DISTI # BSZ215CHXTMA1 | Infineon Technologies AG | Trans MOSFET N/P-CH 20V 5.1A/3.2A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ215CHXTMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ215CHXTMA1 DISTI # SP001277210 | Infineon Technologies AG | Trans MOSFET N/P-CH 20V 5.1A/3.2A 8-Pin TSDSON T/R (Alt: SP001277210) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSZ215CHXTMA1 DISTI # 726-BSZ215CHXTMA1 | Infineon Technologies AG | MOSFET SMALL SIGNAL+P-CH RoHS: Compliant | 4828 |
|
| BSZ215CHXTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 5.1A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 86537 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSZ22DN20NS3 G OMO.#: OMO-BSZ22DN20NS3-G |
MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSZ240N12NS3GATMA1 OMO.#: OMO-BSZ240N12NS3GATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: BSZ2012-102T OMO.#: OMO-BSZ2012-102T-1190 |
Nuovo e originale |
|
|
Mfr.#: BSZ215CH OMO.#: OMO-BSZ215CH-1190 |
Nuovo e originale |
|
Mfr.#: BSZ215CHXTMA1 |
MOSFET N/P-CH 20V 8TDSON |
|
|
Mfr.#: BSZ22DN20NS3 G OMO.#: OMO-BSZ22DN20NS3-G-1190 |
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP |
|
|
Mfr.#: BSZ22DN20NS3G OMO.#: OMO-BSZ22DN20NS3G-1190 |
Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSZ22DN20NS3GATMA1 |
MOSFET N-CH 200V 7A 8TSDSON |
|
|
Mfr.#: BSZ240N12NS3 G OMO.#: OMO-BSZ240N12NS3-G-1190 |
MOSFET N-Ch 120V 37A TSDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSZ240N12NS3GATMA1 |
MOSFET N-CH 120V 37A TSDSON-8 |