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ZTX653STZ

ZTX653STZ
Mfr. #:
ZTX653STZ
Produttore:
Diodes Incorporated
Descrizione:
Bipolar Transistors - BJT NPN Super E-Line
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
ZTX653STZ Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZTX653STZ Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Diodi incorporati
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-92-3
Polarità del transistor:
NPN
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
100 V
Collettore-tensione di base VCBO:
120 V
Emettitore-tensione di base VEBO:
5 V
Tensione di saturazione collettore-emettitore:
0.23 V
Corrente massima del collettore CC:
2 A
Guadagno larghezza di banda prodotto fT:
175 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
ZTX653S
Altezza:
4.01 mm
Lunghezza:
4.77 mm
Confezione:
Massa
Larghezza:
2.41 mm
Marca:
Diodi incorporati
Corrente continua del collettore:
2 A
Pd - Dissipazione di potenza:
1 W
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
2000
sottocategoria:
transistor
Unità di peso:
0.016000 oz
Tags
ZTX653S, ZTX653, ZTX65, ZTX6, ZTX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
ZTX653 Series NPN 2 A 100 V Silicon Planar Medium Power Transistor - TO-92-3
***roFlash
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
*** Electronics
Bipolar Transistors - BJT NPN Super E-Line
***(Formerly Allied Electronics)
Medium Pwr; NPN; Transistor; 2A; 100V; E-Line
***ure Electronics
ZTX653 Series NPN 2 A 100 V Silicon Planar Medium Power Transistor - TO-92-3
***C
Trans GP BJT NPN 100V 2A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 2A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 2A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 2A 3-Pin E-Line TO-92
***fin
Transistor NPN ZTX653 ZETEX Ampere=2 V=100 TO92
***ment14 APAC
Transistor, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:175MHz; Power Dissipation Pd:1W;
***ark
BIPOLAR TRANSISTOR, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:175MHz RoHS Compliant: Yes
***nell
TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 1W; DC Collector Current: 2A; DC Current Gain hFE: -; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Device Marking: ZTX653; Gain Bandwidth ft Min: 140MHz; Gain Bandwidth ft Typ: 175MHz; Hfe Min: 100; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V
***id Electronics
Diodes Inc ZTX453 NPN 1A 1W BiPolar Transistor
***el Electronic
Bipolar Transistors - BJT NPN Medium Power
***C
Trans GP BJT NPN 100V 1A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 1A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 1A 3-Pin E-Line TO-92
***nell
TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 700mV; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 1A; Current Ic hFE: 150mA; Device Marking: ZTX453; Gain Bandwidth ft Min: 150MHz; Hfe Min: 40; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V
***p One Stop Global
Trans GP BJT NPN 100V 1A 3-Pin E-Line Box
***ark
Trans, Npn, 100V, 1A, 150Deg C, 1W Rohs Compliant: Yes
***des Inc SCT
NPN, 75V, 3A, E-Line, 1W
***r Electronics
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
*** Source Electronics
Trans GP BJT NPN 100V 1A 1000mW 3-Pin TO-92 Box / TRANS NPN 80V 1A TO-92
***emi
High Current NPN Bipolar Transistor
***nell
TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 40hFE; Transistor Case Style: T
***ark
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; DC Current Gain Min (hfe):40; Package/Case:TO-92; C-E Breakdown Voltage:80V; DC Collector Current:1A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***ment14 APAC
TRANSISTOR, NPN TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:150mA; Gain Bandwidth ft Typ:130MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Ptot Max:625mW; Transistor Type:General Purpose; Voltage Vcbo:100V
***et
Trans Darlington NPN 100V 1.5A 3-Pin TO-92 Bulk
***S
French Electronic Distributor since 1988
***ark
Transistor; Transistor Type:Bipolar; Leaded Process Compatible:Yes; Package/Case:TO-92; Peak Reflow Compatible (260 C):Yes; Current Rating:1.5A; Mounting Type:Through Hole; Voltage Rating:100V RoHS Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92
***ure Electronics
MPSAXX Series NPN 625 mW 100V 800 mA Through Hole Darlington Transistor TO-92-3
***emi
NPN Bipolar Junction Darlington Transistor
***Yang
Trans Darlington NPN 100V 0.8A 3-Pin TO-92 Bulk - Bulk
***ment14 APAC
Transistor, NPN, 100V, 0.5A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:200MHz; Power
***rchild Semiconductor
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics.
***nell
TRANSISTOR, NPN, 100V, 0.5A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
ZTX653STZ
DISTI # ZTX653STZ-ND		Diodes IncorporatedTRANS NPN 100V 2A E-LINE
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)		Temporarily Out of Stock
  • 2000:$0.4128
ZTX653STZ
DISTI # ZTX653STZ		Diodes IncorporatedTrans GP BJT NPN 100V 2A 3-Pin E-Line Box - Ammo Pack (Alt: ZTX653STZ)
RoHS: Not Compliant
Min Qty: 2000
Container: Ammo Pack		Americas - 0
  • 2000:$0.2999
  • 4000:$0.2849
  • 8000:$0.2719
  • 12000:$0.2589
  • 20000:$0.2539
ZTX653STZ
DISTI # ZTX653STZ		Diodes IncorporatedTrans GP BJT NPN 100V 2A 3-Pin E-Line Box (Alt: ZTX653STZ)
RoHS: Compliant
Min Qty: 2000
Container: Box		Europe - 0
  • 2000:€0.3299
  • 4000:€0.3219
  • 8000:€0.3159
  • 12000:€0.3149
  • 20000:€0.3139
ZTX653STZ
DISTI # 70438678		Diodes IncorporatedMedium Pwr,NPN,Transistor,2A,100V,E-Line
RoHS: Compliant		0
  • 25:$0.5700
  • 100:$0.4700
  • 250:$0.4400
  • 500:$0.4000
ZTX653STZ
DISTI # 522-ZTX653STZ		Diodes IncorporatedBipolar Transistors - BJT NPN Super E-Line
RoHS: Compliant		37
  • 1:$0.8600
  • 10:$0.7130
  • 100:$0.4600
  • 1000:$0.3680
ZTX653STZ
DISTI # 6697464		Zetex / Diodes IncMEDIUM PWR NPN TRANSISTOR 2A 100V E-LINE, PK885
  • 5:£0.7800
  • 25:£0.5180
  • 100:£0.4060
  • 500:£0.3500
  • 1000:£0.2920
ZTX653STZ
DISTI # 6697464P		Zetex / Diodes IncMEDIUM PWR NPN TRANSISTOR 2A 100V E-LINE, TA5700
  • 25:£0.5180
  • 100:£0.4060
  • 500:£0.3500
  • 1000:£0.2920
ZTX653STZZetex / Diodes Inc 
RoHS: Compliant		Americas - 1829
    Immagine Parte # Descrizione
    MJ15003G

    Mfr.#: MJ15003G

    OMO.#: OMO-MJ15003G

    		 Bipolar Transistors - BJT 20A 140V 250W NPN
    ZTX753STZ

    Mfr.#: ZTX753STZ

    OMO.#: OMO-ZTX753STZ

    		 Bipolar Transistors - BJT PNP Super E-Line
    IX31G-A-10S-CV(7.0)

    Mfr.#: IX31G-A-10S-CV(7.0)

    OMO.#: OMO-IX31G-A-10S-CV-7-0--HIROSE

    		 Nuovo e originale
    IX61G-A-10P

    Mfr.#: IX61G-A-10P

    OMO.#: OMO-IX61G-A-10P-HIROSE

    		 CONN MULTI-PURP RCPT 10P R/A SMD
    ZTX753STZ

    Mfr.#: ZTX753STZ

    OMO.#: OMO-ZTX753STZ-DIODES

    		 Bipolar Transistors - BJT PNP Super E-Line
    CRCW08050000Z0EBC

    Mfr.#: CRCW08050000Z0EBC

    OMO.#: OMO-CRCW08050000Z0EBC-VISHAY-DALE

    		 RES SMD 0 OHM JUMP 1/8W 0805
    MJ15003G

    Mfr.#: MJ15003G

    OMO.#: OMO-MJ15003G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT 20A 140V 250W NPN
    Disponibilità
    Azione:
    Available
    Su ordine:
    1986
    Inserisci la quantità:
    Il prezzo attuale di ZTX653STZ è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,85 USD
    0,85 USD
    10
    0,71 USD
    7,13 USD
    100
    0,46 USD
    46,00 USD
    1000
    0,37 USD
    368,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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