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IRF6691TR1

IRF6691TR1
Mfr. #:
IRF6691TR1
Produttore:
Infineon / IR
Descrizione:
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF6691TR1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
N
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DirectFET-MT
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
20 V
Id - Corrente di scarico continua:
32 A
Rds On - Resistenza Drain-Source:
1.8 mOhms
Vgs - Tensione Gate-Source:
12 V
Qg - Carica cancello:
47 nC
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2.8 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
0.7 mm
Lunghezza:
6.35 mm
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET di potenza HEXFET più diodo Schottky
Larghezza:
5.05 mm
Marca:
Infineon / IR
Tempo di caduta:
10 ns
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
95 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
25 ns
Tempo di ritardo di accensione tipico:
23 ns
Parte # Alias:
SP001530888
Unità di peso:
0.017637 oz
Tags
IRF669, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Diode; N-Channel; 20 V; +12 V; 1.8 Milliohms (Typ.); 2.8 W; DirectFET; -40 degC
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:26A; On-Resistance, Rds(on):2.5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT; Applications:CTRL FET RoHS Compliant: No
***ernational Rectifier
A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only.
***ment14 APAC
MOSFET, N, DIRECTFET, MT; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:6580pF; Current Id Max:32A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MT; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:260A; Reverse Recovery Time trr Typ:32ns; SMD Marking:6691; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
IRF6691TR1
DISTI # IRF6691TR1-ND		Infineon Technologies AGMOSFET N-CH 20V 32A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6691TR1PBF
    DISTI # IRF6691TR1PBFTR-ND    		Infineon Technologies AGMOSFET N-CH 20V 32A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6691TR1PBF
      DISTI # IRF6691TR1PBFCT-ND      		Infineon Technologies AGMOSFET N-CH 20V 32A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        IRF6691TR1PBF
        DISTI # IRF6691TR1PBFDKR-ND        		Infineon Technologies AGMOSFET N-CH 20V 32A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          IRF6691TR1PBF
          DISTI # 70018853          		Infineon Technologies AG20V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MT PACKAGE
          RoHS: Compliant          		0
          • 1000:$2.8800
          IRF6691TR1International Rectifier 43115
            IRF6691TR1International Rectifier 1000
              IRF6691TR1PBFInternational Rectifier 212
                IRF6691TR1PBFInternational Rectifier 447
                  IRF6691TR1International Rectifier*** FREE SHIPPING ORDERS OVER $100 *** MOSFET Transistor, N-Channel, SMT10
                  • 9:$2.2800
                  • 3:$3.0400
                  • 1:$4.5600
                  IRF6691TR1
                  DISTI # 1078427                  		Infineon Technologies AGMOSFET, N, DIRECTFET, MT
                  RoHS: Compliant                  		0
                  • 500:$3.9300
                  • 1000:$3.9300
                  • 250:$4.1400
                  • 100:$4.3000
                  • 10:$4.7500
                  • 1:$5.0600
                  IRF6691TR1PBF
                  DISTI # 1436936                  		Infineon Technologies AGMOSFET, N, DIRECTFET, 20V, MT
                  RoHS: Compliant                  		0
                  • 500:$3.9300
                  • 1000:$3.9300
                  • 250:$4.1400
                  • 100:$4.3000
                  • 10:$4.7500
                  • 1:$5.0600
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                  Disponibilità
                  Azione:
                  Available
                  Su ordine:
                  2000
                  Inserisci la quantità:
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