IPA60R280CFD7XKSA1

IPA60R280CFD7XKSA1
Mfr. #:
IPA60R280CFD7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET LOW POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPA60R280CFD7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPA60R280CFD7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220FP-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
6 A
Rds On - Resistenza Drain-Source:
237 mOhms
Vgs th - Tensione di soglia gate-source:
3.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
18 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
24 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Serie:
CoolMOS CFD7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
53 ns
Tempo di ritardo di accensione tipico:
17 ns
Parte # Alias:
IPA60R280CFD7 SP001634136
Tags
IPA60R280C, IPA60R28, IPA60R2, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK
***ark
Mosfet, N-Ch, 600V, 6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.237Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPA60R280CFD7XKSA1
DISTI # V36:1790_18786376
Infineon Technologies AGLOW POWER_NEW0
  • 500000:$0.8963
  • 250000:$0.8999
  • 50000:$1.2940
  • 5000:$2.0420
  • 500:$2.1700
IPA60R280CFD7XKSA1
DISTI # IPA60R280CFD7XKSA1-ND
Infineon Technologies AGMOSFET N-CH TO220FP-3
RoHS: Compliant
Min Qty: 1
Container: Tube
351In Stock
  • 5000:$1.0094
  • 2500:$1.0482
  • 500:$1.3588
  • 100:$1.6539
  • 25:$1.9412
  • 10:$2.0580
  • 1:$2.2900
IPA60R280CFD7XKSA1
DISTI # IPA60R280CFD7XKSA1
Infineon Technologies AGCoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK - Rail/Tube (Alt: IPA60R280CFD7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$0.9389
  • 3000:$0.9559
  • 2000:$0.9889
  • 1000:$1.0269
  • 500:$1.0649
IPA60R280CFD7XKSA1
DISTI # SP001634136
Infineon Technologies AGCoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK (Alt: SP001634136)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.8789
  • 500:€0.9119
  • 100:€0.9469
  • 50:€0.9849
  • 25:€1.0259
  • 10:€1.1189
  • 1:€1.2309
IPA60R280CFD7XKSA1
DISTI # 43AC9321
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.237ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
  • 1000:$1.0800
  • 500:$1.3000
  • 100:$1.4800
  • 10:$1.8600
  • 1:$2.1900
IPA60R280CFD7XKSA1
DISTI # 726-IPA60R280CFD7XKS
Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant
0
  • 1:$2.1700
  • 10:$1.8400
  • 100:$1.4700
  • 500:$1.2900
  • 1000:$1.0700
IPA60R280CFD7XKSA1
DISTI # 2807978
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP0
  • 500:£0.9470
  • 250:£1.0100
  • 100:£1.0700
  • 10:£1.3600
  • 1:£1.8100
IPA60R280CFD7XKSA1
DISTI # 2807978
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP
RoHS: Compliant
0
  • 1000:$1.6000
  • 500:$1.6900
  • 250:$1.9500
  • 100:$2.3100
  • 10:$2.8300
  • 1:$3.2400
Immagine Parte # Descrizione
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MOSFET N-channel 600 V, 0.037Ohm typ., 62A MDmesh DM6 Power MOSFET in a TO-247 package
IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1

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IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1

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STF16N60M6

Mfr.#: STF16N60M6

OMO.#: OMO-STF16N60M6

MOSFET N-channel 600 V, 0.29 Ohm typ., 12 A MDmesh M6 Power MOSFET in a TO-220FP package
STF13N60DM2

Mfr.#: STF13N60DM2

OMO.#: OMO-STF13N60DM2

MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package
R-78B5.0-2.0

Mfr.#: R-78B5.0-2.0

OMO.#: OMO-R-78B5-0-2-0-RECOM-POWER

2A DC/DC-CONVERTER 'INNOLINE'
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(
STF16N60M6

Mfr.#: STF16N60M6

OMO.#: OMO-STF16N60M6-STMICROELECTRONICS

N-CHANNEL 600V M6 POWER MOSFET
STW70N60DM6

Mfr.#: STW70N60DM6

OMO.#: OMO-STW70N60DM6-STMICROELECTRONICS

N-CHANNEL 600 V, 0.037OHM TYP.,
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di IPA60R280CFD7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,17 USD
2,17 USD
10
1,84 USD
18,40 USD
100
1,47 USD
147,00 USD
500
1,29 USD
645,00 USD
1000
1,07 USD
1 070,00 USD
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