IAUT260N10S5N019ATMA1

Mfr. #:: IAUT260N10S5N019ATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET_(75V,120V(
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IAUT260N10S5N019ATMA1 Scheda dati
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Tags: IAUT2, IAUT, IAU

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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IAUT260N10S5N019ATMA1 Descrizione

***et Europe: OptiMOS-5 Power Transistor MOSFET N-Channel 100V 260A 8-Pin PG-HSOF-1 T/R

***ical: Trans MOSFET N-CH 100V 260A Automotive 9-Pin(8+Tab) HSOF T/R

***ronik: N-CH 100V 260A 1,8mOhm HSOF-8

***i-Key: 100V 260A 1.9MOHM TOLL

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested

***ark: Mosfet, Aec-Q101, N-Ch, 100V, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0016Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 100V, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:HSOF; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, CA-N, 100V, HSOF; Polarità Transistor:Canale N; Corrente Continua di Drain Id:260A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0016ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:HSOF; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IAUT260N10S5N019ATMA1 Maggiori informazioni

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

75V to 100V N-Channel Automotive MOSFETs: Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IAUT260N10S5N019ATMA1 DISTI # V72:2272_19082749	Infineon Technologies AG	OptiMOS -5 Power-Transistor	2060	1000:$2.6490 500:$3.1820 250:$3.6170 100:$3.7880 25:$3.9480 10:$4.3870 1:$5.6683
IAUT260N10S5N019ATMA1 DISTI # V36:1790_19082749	Infineon Technologies AG	OptiMOS -5 Power-Transistor	0	2000000:$2.5660 1000000:$2.5670 200000:$2.6330 20000:$2.7270 2000:$2.7420
IAUT260N10S5N019ATMA1 DISTI # IAUT260N10S5N019ATMA1CT-ND	Infineon Technologies AG	100V 260A 1.9MOHM TOLL RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3581In Stock	1000:$2.9725 500:$3.5245 100:$4.1402 10:$5.0530 1:$5.6300
IAUT260N10S5N019ATMA1 DISTI # IAUT260N10S5N019ATMA1DKR-ND	Infineon Technologies AG	100V 260A 1.9MOHM TOLL RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3581In Stock	1000:$2.9725 500:$3.5245 100:$4.1402 10:$5.0530 1:$5.6300
IAUT260N10S5N019ATMA1 DISTI # IAUT260N10S5N019ATMA1TR-ND	Infineon Technologies AG	MOSFET_(75V,120V( RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	2000In Stock	2000:$2.7416
IAUT260N10S5N019ATMA1 DISTI # 29519584	Infineon Technologies AG	OptiMOS -5 Power-Transistor	2060	3:$5.6683
IAUT260N10S5N019ATMA1 DISTI # SP001676336	Infineon Technologies AG	OptiMOS-5 Power Transistor MOSFET N-Channel 100V 260A 8-Pin PG-HSOF-1 T/R (Alt: SP001676336) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Europe - 2000	20000:€2.3900 12000:€2.5900 8000:€2.7900 4000:€2.8900 2000:€3.0900
IAUT260N10S5N019ATMA1 DISTI # IAUT260N10S5N019ATMA1	Infineon Technologies AG	OptiMOS-5 Power Transistor MOSFET N-Channel 100V 260A 8-Pin PG-HSOF-1 T/R - Tape and Reel (Alt: IAUT260N10S5N019ATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$2.6900 12000:$2.7900 8000:$2.8900 4000:$2.9900 2000:$3.0900
IAUT260N10S5N019ATMA1 DISTI # 59AC7034	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:260A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	1218	1000:$2.7700 500:$3.2800 250:$3.6700 100:$3.8600 50:$4.0600 25:$4.2600 10:$4.4500 1:$5.2400
IAUT260N10S5N019ATMA1 DISTI # 726-IAUT260N10S5N01	Infineon Technologies AG	MOSFET MOSFET_(75V,120V( RoHS: Compliant	3676	1:$5.1900 10:$4.4100 100:$3.8200 250:$3.6300 500:$3.2500 1000:$2.7400 2000:$2.6100
IAUT260N10S5N019ATMA1 DISTI # 2888479	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, HSOF	3178	500:£2.2400 250:£2.5100 100:£2.7700 10:£3.4000 1:£4.2300
IAUT260N10S5N019ATMA1 DISTI # 2888479	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, HSOF RoHS: Compliant	1218	1000:$4.0100 500:$4.0900 250:$4.3200 100:$4.5600 10:$5.1600 1:$5.5200

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1

MOSFET MOSFET_(75V,120V(

Mfr.#: IAUT260N10S5N019

OMO.#: OMO-IAUT260N10S5N019-1190

N-CH 100V 260A 1,8mOhm HSOF-8

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(

Disponibilità

Azione:: Available
Su ordine:: 4500
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Il prezzo attuale di IAUT260N10S5N019ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~3,73 USD~~; ~~3,73 USD~~

10: ~~3,55 USD~~; ~~35,46 USD~~

100: ~~3,36 USD~~; ~~335,97 USD~~

500: ~~3,17 USD~~; ~~1 586,50 USD~~

1000: ~~2,99 USD~~; ~~2 986,40 USD~~

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IAUT 11
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IAUT260N10S5N019ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes