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SKM600GB126D

SKM600GB126D
Mfr. #:
SKM600GB126D
Produttore:
SEMIKRON
Descrizione:
IGBT MODULE, 1.2KV, 660A, SEMITRANS 3, Transistor Polarity:N Channel, DC Collector Current:660A, Collector Emitter Saturation Voltage Vce(on):2.15V, Power Dissipation Pd:-, Collector Emitter Volt
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SKM600GB126D Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
SEMIKRON
categoria di prodotto
Chip IC
Tags
SKM600GB, SKM600, SKM60, SKM6, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1.2KV 660A 7-Pin Case D-56
***ikron
Features: Trench = Trenchgate technology V CEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x I c Typical Applications: AC inverter drives UPS Electronic welders
***ark
IGBT MODULE, 1.2KV, 660A, SEMITRANS 3; Continuous Collector Current:660A; Collector Emitter Saturation Voltage:2.12V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***trelec
IGBT module Connection: 3 x M6 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: SEMITRANS 3 Collector-emitter saturation voltage: 1.7 V Collector-emitter voltage: 1200 V Energy dissipation during make-time: 39 mJ Energy dissipation during turn-off time: 64 mJ
***p One Stop
Trans IGBT Module N-CH 1200V 200A 680000mW 20-Pin ECONO4-1 Tray
***ark
Igbt Module; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:680W; Operating Temperature Max:150°C; Igbt Termination:stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes
***ineon
EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
***et Europe
Trans IGBT Module N-CH 650V 200A 35-pin ECONO3-4
***ineon SCT
EconoPACK™ 3 650 V, 200 A sixpack IGBT module with low sat and fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology, AG-ECONO3-4, RoHS
***ineon
EconoPACK 3 650V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Increased blocking voltage capability to 650V; High Short Circuit Capability, Self Limiting Short Circuit Current; T(vj op) = 150C; Integrated NTC temperature sensor; Copper Base Plate; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
***et Europe
Trans IGBT Module N-CH 1.2kV 100A nom 780W 7-Pin 106.4x61.4mm
*** Electronic Components
IGBT Modules 1200V 100A DUAL
***omponent
Infineon power module
***el Nordic
Contact for details
***ical
BSM 100GB 120DLC
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 10 mJ Energy dissipation during turn-off time: 12 mJ
***et
Trans IGBT Module N-CH 1.2KV 200A 20-Pin Case SP4
***i-Key
IGBT MODULE NPT DUAL 1200V SP4
***el Electronic
IGBT MODULE 1200V 200A 961W SP4
*** Stop Electro
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 150A 12-Pin Case SP1
***rochip SCT
High Voltage Power Module, Boost chopper, 600V, RoHS
***ark
PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
***el Electronic
IGBT MODULE 600V 150A 340W SP1
***ical
Trans IGBT Module N-CH 600V 150A 340000mW 32-Pin Case SP-3 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Three level inverter, 600V, RoHS
***ark
PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes
***i-Key
IGBT MODULE 3LEVEL INVERTER SP3
Parte # Mfg. Descrizione Azione Prezzo
SKM600GB126D
DISTI # 65H6846		SEMIKRONIGBT MODULE, 1.2KV, 660A, SEMITRANS 3,Transistor Polarity:N Channel,DC Collector Current:660A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:7Pins RoHS Compliant: Yes0
  • 25:$208.8200
  • 10:$222.1800
  • 5:$225.5200
  • 1:$228.8600
SKM600GB126D
DISTI # 70098230		SEMIKRONIGBT,1200 V VCE,660 A @ DegC,20 V,490 A
RoHS: Compliant		0
  • 1:$360.0800
  • 12:$337.2100
  • 48:$317.0700
  • 96:$299.1900
  • 144:$283.2300
SKM600GB126D
DISTI # SKM600GB126D		SEMIKRONPOWER IGBT TRANSISTOR
RoHS: Compliant		0
    Immagine Parte # Descrizione
    SKM600GA123D

    Mfr.#: SKM600GA123D

    OMO.#: OMO-SKM600GA123D-1190

    		 Nuovo e originale
    SKM600GA125D

    Mfr.#: SKM600GA125D

    OMO.#: OMO-SKM600GA125D-1190

    		 SEMITRANS, Ultrafast NPT IGBT Module, 200V, 400A
    SKM600GA126D

    Mfr.#: SKM600GA126D

    OMO.#: OMO-SKM600GA126D-1190

    		 Nuovo e originale
    SKM600GA128D

    Mfr.#: SKM600GA128D

    OMO.#: OMO-SKM600GA128D-1190

    		 Nuovo e originale
    SKM600GA12T4

    Mfr.#: SKM600GA12T4

    OMO.#: OMO-SKM600GA12T4-1190

    		 SEMITRANS, 1200V, 800A
    SKM600GA12V

    Mfr.#: SKM600GA12V

    OMO.#: OMO-SKM600GA12V-1190

    		 TRANSISTOR, Transistor Polarity:-, DC Collector Current:890A, Collector Emitter Saturation Voltage Vce(on):1.2kV, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:940mV, No. of Pins:5P
    SKM600GA173D

    Mfr.#: SKM600GA173D

    OMO.#: OMO-SKM600GA173D-1190

    		 Nuovo e originale
    SKM600GA176D

    Mfr.#: SKM600GA176D

    OMO.#: OMO-SKM600GA176D-1190

    		 IGBT Array & Module Transistor, N Channel, 660 A, 2 V, 1.7 kV, Module RoHS Compliant: Yes
    SKM600GB066D

    Mfr.#: SKM600GB066D

    OMO.#: OMO-SKM600GB066D-1190

    		 SKM600GB066D, IGBT Halfbridge Module, N-channel, Dual, 760A 600V, 7-Pin D 56
    SKM600GB126D

    Mfr.#: SKM600GB126D

    OMO.#: OMO-SKM600GB126D-1190

    		 IGBT MODULE, 1.2KV, 660A, SEMITRANS 3, Transistor Polarity:N Channel, DC Collector Current:660A, Collector Emitter Saturation Voltage Vce(on):2.15V, Power Dissipation Pd:-, Collector Emitter Volt
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di SKM600GB126D è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    313,23 USD
    313,23 USD
    10
    297,57 USD
    2 975,68 USD
    100
    281,91 USD
    28 190,70 USD
    500
    266,25 USD
    133 122,75 USD
    1000
    250,58 USD
    250 584,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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