OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

SKM600GA125D

SKM600GA125D
Mfr. #:
SKM600GA125D
Produttore:
SEMIKRON
Descrizione:
SEMITRANS, Ultrafast NPT IGBT Module, 200V, 400A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SKM600GA125D Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
SEMIKRON
categoria di prodotto
Modulo
Tags
SKM600GA12, SKM600GA, SKM600, SKM60, SKM6, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
SEMITRANS; Ultrafast NPT IGBT Module; 200V; 400A
***ark
IGBT Module; Continuous Collector Current:580A; Collector Emitter Saturation Voltage:3.3V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV; Transistor Mounting:Panel RoHS Compliant: Yes
***ikron
Features: NPT-IGBT with positive temperature coeffecient of V CEsat Short circuit self limiting to 6 x I c Corresponds to standards: IEC 60721-3-3 (humidity) class 3K3/IEC 68T.1 climate 40/125/56 Typical Applications: Resonant inverters upto 100 kHz Inductive heating Electronic welders at f SW > 20 kHz
***ical
Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray
***ineon SCT
EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS
***ment14 APAC
IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power
***ark
IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
***ure Electronics
FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
*** Stop Electro
Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP
*** Electronic Components
Bipolar Transistors - BJT NPN Power Module
***ow.cn
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
***nell
TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
***ark
BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
SKM 600GA125D
DISTI # 09J5185		SEMIKRONIGBT Module,Transistor Polarity:NPN,DC Collector Current:580A,Collector Emitter Saturation Voltage Vce(on):3.3V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:5Pins,Operating Temperature Max:150°C RoHS Compliant: Yes0
  • 25:$175.8500
  • 10:$187.1100
  • 5:$189.9200
  • 1:$192.7400
SKM600GA125D
DISTI # 71043318		SEMIKRONSEMITRANS,Ultrafast NPT IGBT Module,200V,400A
RoHS: Compliant		0
  • 1:$325.0900
  • 12:$308.2900
  • 36:$288.3900
  • 96:$270.9200
  • 144:$255.4300
Immagine Parte # Descrizione
SKM600GA123D

Mfr.#: SKM600GA123D

OMO.#: OMO-SKM600GA123D-1190

 Nuovo e originale
SKM600GA124D

Mfr.#: SKM600GA124D

OMO.#: OMO-SKM600GA124D-1190

 Nuovo e originale
SKM600GA125D

Mfr.#: SKM600GA125D

OMO.#: OMO-SKM600GA125D-1190

 SEMITRANS, Ultrafast NPT IGBT Module, 200V, 400A
SKM600GA126D

Mfr.#: SKM600GA126D

OMO.#: OMO-SKM600GA126D-1190

 Nuovo e originale
SKM600GA128D

Mfr.#: SKM600GA128D

OMO.#: OMO-SKM600GA128D-1190

 Nuovo e originale
SKM600GA12E4

Mfr.#: SKM600GA12E4

OMO.#: OMO-SKM600GA12E4-1190

 IGBT MODULE, SINGLE, 1.2KV, 913A, Transistor Polarity:NPN, DC Collector Current:913A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
SKM600GA12T4

Mfr.#: SKM600GA12T4

OMO.#: OMO-SKM600GA12T4-1190

 SEMITRANS, 1200V, 800A
SKM600GB063D

Mfr.#: SKM600GB063D

OMO.#: OMO-SKM600GB063D-1190

 Nuovo e originale
SKM600GB066D

Mfr.#: SKM600GB066D

OMO.#: OMO-SKM600GB066D-1190

 SKM600GB066D, IGBT Halfbridge Module, N-channel, Dual, 760A 600V, 7-Pin D 56
SKM600GB126D

Mfr.#: SKM600GB126D

OMO.#: OMO-SKM600GB126D-1190

 IGBT MODULE, 1.2KV, 660A, SEMITRANS 3, Transistor Polarity:N Channel, DC Collector Current:660A, Collector Emitter Saturation Voltage Vce(on):2.15V, Power Dissipation Pd:-, Collector Emitter Volt
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di SKM600GA125D è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
383,14 USD
383,14 USD
10
363,99 USD
3 639,88 USD
100
344,83 USD
34 483,05 USD
500
325,67 USD
162 836,65 USD
1000
306,52 USD
306 516,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Top