IRF6710S2TRPBF

Mfr. #:: IRF6710S2TRPBF
Produttore:: Infineon / IR
Descrizione:: MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
Ciclo vitale:: Nuovo da questo produttore.
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Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: DirectFET-S1

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 25 V

Id - Corrente di scarico continua:: 37 A

Rds On - Resistenza Drain-Source:: 5.9 mOhms

Vgs th - Tensione di soglia gate-source:: 1.8 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 8.8 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 15 W

Configurazione:: Separare

Confezione:: Bobina

Altezza:: 0.74 mm

Lunghezza:: 4.85 mm

Tipo di transistor:: 1 N-Channel

Larghezza:: 3.95 mm

Marca:: Infineon / IR

Transconduttanza diretta - Min:: 21 S

Tempo di caduta:: 6 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 20 ns

Quantità confezione di fabbrica:: 4800

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 5.2 ns

Tempo di ritardo di accensione tipico:: 7.9 ns

Parte # Alias:: SP001524736

Tags: IRF6710, IRF671, IRF67, IRF6, IRF

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We provide 90-360 days warranty.

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IRF6710S2TRPBF Descrizione

***ical: Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET

***(Formerly Allied Electronics): SIR436DP-T1-GE3 N-channel MOSFET Transistor; 25 A; 25 V; 8-Pin PowerPAK SO

***et: Trans MOSFET N-CH 25V 25A 8-Pin PowerPAK SO T/R

***S: French Electronic Distributor since 1988

***ure Electronics: BSZ0506NS Series 30 V 40 A 4.4 mOhm OptiMOS5 Power-MOSFET - TSDSON-8 FL

***el Electronic: In a Pack of 10, N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ0506NSATMA1

***nell: MOSFET, N-CH, 30V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 27W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

***ical: Trans MOSFET N-CH 30V 40A 8-Pin QFN EP T/R

***peria: PSMN5R8-30LL - N-channel DFN3333-8 30 V 5.8 mΩ logic level MOSFET

***el Electronic: IC OCTAL LED DRVR 100MA 16SOIC

***ark: MOSFET, N CH, 30V, 40A, 8-QFN3333; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes

***p One Stop Global: Trans MOSFET N-CH 25V 48A 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 25 V, 0.006 Ohm, 48 A - DPAK - IPAK

*** Electronic Components: IGBT Transistors MOSFET N-Ch, 25V-0.006ohms 48A

***r Electronics: Power Field-Effect Transistor, 48A I(D), 25V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 5.7mΩ

***r Electronics: Power Field-Effect Transistor, 35A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.

***Yang: Transistor MOSFET Array Dual N-Channel 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel

***emi: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V

***ical: Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 EP T/R

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRF6710S2TRPBF DISTI # V72:2272_13890391	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T/R RoHS: Compliant	2322	75000:$0.7810 30000:$0.7879 15000:$0.7947 6000:$0.8018 3000:$0.8909 1000:$0.9898 500:$0.9932 250:$1.0863 100:$1.1822 50:$1.2511 25:$1.4123 10:$1.4597 1:$1.6155
IRF6710S2TRPBF DISTI # IRF6710S2TRPBF-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6710S2TRPBF DISTI # 26196267	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T/R RoHS: Compliant	2322	1000:$0.8985 500:$0.9983 250:$1.1499 100:$1.1813 50:$1.2483 25:$1.4096 10:$1.4562 8:$1.6133
IRF6710S2TRPBF DISTI # IRF6710S2TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R (Alt: IRF6710S2TRPBF) RoHS: Compliant Min Qty: 4800 Container: Tape and Reel	Asia - 0
IRF6710S2TRPBF DISTI # 70019595	Infineon Technologies AG	MOSFET,25V,12.000A,DIRECTFET RoHS: Compliant	0	4800:$0.9310 9600:$0.9120 24000:$0.8840
IRF6710S2TRPBF DISTI # 942-IRF6710S2TRPBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC RoHS: Compliant	164	1:$1.9400 10:$1.6500 100:$1.3200 500:$1.1500 1000:$0.9570 2500:$0.8880 4800:$0.8550 9600:$0.7900
IRF6710S2TRPBF DISTI # C1S322000592281	Infineon Technologies AG	MOSFETs RoHS: Compliant	2322	100:$1.1842 50:$1.2509 25:$1.4241 10:$1.4701

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	Mfr.#: DF04S OMO.#: OMO-DF04S	Bridge Rectifiers 1.5A Bridge
	Mfr.#: IRLML2502TRPBF OMO.#: OMO-IRLML2502TRPBF	MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl
	Mfr.#: IRLML2502TRPBF OMO.#: OMO-IRLML2502TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 4.2A SOT-23
	Mfr.#: DF04S OMO.#: OMO-DF04S-ON-SEMICONDUCTOR	BRIDGE RECT 1PHASE 400V 1A DFS

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Su ordine:: 2087
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Iniziare con

IRF6710 3
IRF671 28
IRF67 80
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IRF6710S2TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes