SIHD9N60E-GE3

Mfr. #:: SIHD9N60E-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIHD9N60E-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SIHD9N60E-GE3 Datasheet SIHD9N60E-GE3 Datasheet (P4-P6)SIHD9N60E-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:: SIHD9N60E-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 600 V

Id - Corrente di scarico continua:: 9 A

Rds On - Resistenza Drain-Source:: 320 mOhms

Vgs th - Tensione di soglia gate-source:: 4.5 V

Vgs - Tensione Gate-Source:: 30 V

Qg - Carica cancello:: 26 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 78 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Serie:: E

Marca:: Vishay / Siliconix

Tempo di caduta:: 12 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 13 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 31 ns

Tempo di ritardo di accensione tipico:: 14 ns

Unità di peso:: 0.011993 oz

Tags: SIHD, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD9N60E-GE3 Descrizione

***et: Power MOSFET N-Channel 600V 9A 3-Pin DPAK

***ment14 APAC: MOSFET, N-CH, 9A, 600V, TO-252

***ark: Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.32Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Rohs Compliant: Yes

SIHD9N60E-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIHD9N60E-GE3 DISTI # SIHD9N60E-GE3-ND	Vishay Siliconix	MOSFET N-CHANNEL 600V 9A DPAK RoHS: Compliant Min Qty: 1 Container: Tube	2990In Stock	6000:$0.8586 3000:$0.8916 500:$1.1558 100:$1.4068 25:$1.6512 10:$1.7500 1:$1.9500
SIHD9N60E-GE3 DISTI # SIHD9N60E-GE3	Vishay Intertechnologies	Power MOSFET N-Channel 600V 9A 3-Pin DPAK - Tape and Reel (Alt: SIHD9N60E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.8059 18000:$0.8279 12000:$0.8519 6000:$0.8879 3000:$0.9149
SIHD9N60E-GE3 DISTI # SIHD9N60E-GE3	Vishay Intertechnologies	Power MOSFET N-Channel 600V 9A 3-Pin DPAK (Alt: SIHD9N60E-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.8399 500:€0.8629 100:€0.8749 50:€0.8889 25:€1.0009 10:€1.2139 1:€1.7319
SIHD9N60E-GE3 DISTI # 78-SIHD9N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	3021	1:$1.9500 10:$1.6200 100:$1.2500 500:$1.1000 1000:$0.9110 3000:$0.8490 6000:$0.8170 9000:$0.7860
SIHD9N60E-GE3 DISTI # 2747696	Vishay Intertechnologies	MOSFET, N-CH, 9A, 600V, TO-252 RoHS: Compliant	2913	1000:$1.5400 500:$1.8600 100:$2.3900 10:$2.9700 1:$3.2800
SIHD9N60E-GE3 DISTI # 2747696	Vishay Intertechnologies	MOSFET, N-CH, 9A, 600V, TO-252	2927	500:£0.8050 250:£0.8590 100:£0.9130 10:£1.1800 1:£1.4200

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: FCD260N65S3 OMO.#: OMO-FCD260N65S3	MOSFET SUPERFET3 260MOHM TO252
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	Mfr.#: FCD9N60NTM OMO.#: OMO-FCD9N60NTM	MOSFET 600V N-Channel SupreMOS
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	Mfr.#: FCD380N60E OMO.#: OMO-FCD380N60E	MOSFET 600V N-Channel MOSFET
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	Mfr.#: FCD360N65S3R0 OMO.#: OMO-FCD360N65S3R0	MOSFET SUPERFET3 650V 10A 360 mOhm
	Mfr.#: STD18N55M5 OMO.#: OMO-STD18N55M5-STMICROELECTRONICS	Darlington Transistors MOSFET N-Ch 550V 0.18 13A Mdmesh V Power MOS
	Mfr.#: STD11N60DM2 OMO.#: OMO-STD11N60DM2-STMICROELECTRONICS	N-CHANNEL 600 V, 0.26 OHM TYP.,

Disponibilità

Azione:: Available
Su ordine:: 1986
Inserisci la quantità:

Il prezzo attuale di SIHD9N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,95 USD~~; ~~1,95 USD~~

10: ~~1,62 USD~~; ~~16,20 USD~~

100: ~~1,25 USD~~; ~~125,00 USD~~

500: ~~1,10 USD~~; ~~550,00 USD~~

1000: ~~0,91 USD~~; ~~911,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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SIHD 46
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SIHD9N60E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes