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FCD380N60E

FCD380N60E
Mfr. #:
FCD380N60E
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V N-Channel MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCD380N60E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
10.2 A
Rds On - Resistenza Drain-Source:
380 mOhms
Vgs th - Tensione di soglia gate-source:
3.5 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
34 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
106 W
Configurazione:
Separare
Nome depositato:
SuperFET II
Confezione:
Bobina
Altezza:
2.39 mm
Lunghezza:
6.73 mm
Prodotto:
MOSFET
Serie:
FCD380N60E
Tipo di transistor:
1 N-Channel
Larghezza:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
10 S
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
9 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
64 ns
Tempo di ritardo di accensione tipico:
17 ns
Unità di peso:
0.009184 oz
Tags
FCD3, FCD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
***ure Electronics
N-Channel 600 V 380 mO Surface Mount SuperFET II Easy Drive Mosfet -TO-252
***p One Stop Global
Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) TO-252 T/R
***ark
SuperFET2 380mohm, TO252 - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
***et Europe
Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R
***Components
MOSFET N-Ch SuperFET II 600V 10.2A DPAK
***ical
Trans MOSFET N-CH 600V 10.2A T/R
***i-Key
MOSFET N CH 600V 10.2A DPAK
***et
SUPERFET2 380MOHM, TO252
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:106W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 600V 10,2A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10.2A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.32ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:106W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Parte # Mfg. Descrizione Azione Prezzo
FCD380N60E
DISTI # V72:2272_06337701		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 1000:$0.8777
  • 500:$1.0141
  • 250:$1.1024
  • 100:$1.2248
  • 25:$1.5097
  • 10:$1.5301
  • 1:$1.9742
FCD380N60E
DISTI # V36:1790_06337701		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R0
  • 2500:$0.8567
FCD380N60E
DISTI # FCD380N60ECT-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60EDKR-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60ETR-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 5000:$0.8408
  • 2500:$0.8732
FCD380N60E
DISTI # 32702549		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 9:$1.9742
FCD380N60E
DISTI # 32711099		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.8219
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.7139
  • 15000:€0.7649
  • 10000:€0.8239
  • 5000:€0.8919
  • 2500:€1.0709
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7599
  • 15000:$0.7789
  • 10000:$0.7889
  • 5000:$0.7999
  • 2500:$0.8049
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$1.0098
  • 62500:$1.0267
  • 25000:$1.0621
  • 12500:$1.1000
  • 7500:$1.1407
  • 5000:$1.1846
  • 2500:$1.2320
FCD380N60E
DISTI # 46AC0750		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2057
  • 1000:$1.0500
  • 500:$1.2400
  • 250:$1.3200
  • 100:$1.3900
  • 50:$1.4900
  • 25:$1.6000
  • 10:$1.7000
  • 1:$1.9800
FCD380N60E
DISTI # 63W2839		ON SemiconductorSF2 600V 380MOHM E DPAK / REEL0
  • 25000:$0.6730
  • 10000:$0.6930
  • 2500:$0.7190
  • 1:$0.7250
FCD380N60E
DISTI # 512-FCD380N60E		ON SemiconductorMOSFET 600V N-Channel MOSFET
RoHS: Compliant		2416
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0700
  • 1000:$0.8930
  • 2500:$0.8800
FCD380N60EFairchild Semiconductor Corporation 828
    FCD380N60EFairchild Semiconductor CorporationPower Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		1998
      FCD380N60E
      DISTI # 2825202      		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3
      RoHS: Compliant      		2057
      • 5000:$1.1700
      • 1000:$1.2100
      • 500:$1.3100
      • 250:$1.5900
      • 100:$1.9400
      • 25:$2.8400
      • 5:$3.3100
      FCD380N60E
      DISTI # 2825202      		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-34577
      • 500:£0.8240
      • 250:£0.8840
      • 100:£0.9440
      • 10:£1.2200
      • 1:£1.5900
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      Mfr.#: 4946

      OMO.#: OMO-4946

      		 Standoffs & Spacers M/F NYLON STANDOFF 4-40 1.00 L
      INA226AQDGSRQ1

      Mfr.#: INA226AQDGSRQ1

      OMO.#: OMO-INA226AQDGSRQ1-TEXAS-INSTRUMENTS

      		 Current & Power Monitors & Regulators Hi-Side Msmt Bi-Dir Current/Pwr Mon
      DP83TC811SWRNDRQ1

      Mfr.#: DP83TC811SWRNDRQ1

      OMO.#: OMO-DP83TC811SWRNDRQ1-TEXAS-INSTRUMENTS

      		 Low Power Automotive PHY
      NTB082N65S3F

      Mfr.#: NTB082N65S3F

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      		 SUPERFET3 650V D2PAK PKG
      Disponibilità
      Azione:
      Available
      Su ordine:
      1985
      Inserisci la quantità:
      Il prezzo attuale di FCD380N60E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,81 USD
      1,81 USD
      10
      1,54 USD
      15,40 USD
      100
      1,23 USD
      123,00 USD
      500
      1,07 USD
      535,00 USD
      1000
      0,89 USD
      893,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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