SQJ422EP-T1_GE3

Mfr. #:: SQJ422EP-T1_GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET -40V 75A 83W AEC-Q101 Qualified
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SQJ422EP-T1_GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SQJ422EP-T1_GE3 Datasheet SQJ422EP-T1_GE3 Datasheet (P4-P6)SQJ422EP-T1_GE3 Datasheet (P7-P9)SQJ422EP-T1_GE3 Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:: SQJ422EP-T1_GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-SO-8L-4

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 40 V

Id - Corrente di scarico continua:: 75 A

Rds On - Resistenza Drain-Source:: 2.8 mOhms

Vgs th - Tensione di soglia gate-source:: 1.5 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 100 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 83 W

Configurazione:: Separare

Modalità canale:: Aumento

Qualificazione:: AEC-Q101

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SQ

Tipo di transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 117 S

Tempo di caduta:: 8 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 10 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 29 ns

Tempo di ritardo di accensione tipico:: 13 ns

Unità di peso:: 0.017870 oz

Tags: SQJ42, SQJ4, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJ422EP-T1_GE3 Valutazioni e recensioni

V***i

2019-04-26

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Great!

2019-03-29

SQJ422EP-T1_GE3 Descrizione

***-Wing Technology: VISHAY SQJ422EP-T1-GE3MOSFET Transistor, N Channel, 75 A, 40 V, 0.0028 ohm, 10 V, 2 V

***ical: Trans MOSFET N-CH 40V 75A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

***ure Electronics: Single N-Channel 40 V 3.4 mOhm 83 W SMT Automotive Power Mosfet - PowerPAK SO-8L

***ark: Mosfet, N-Ch, 40V, 75A, Powerpak So Rohs Compliant: Yes

***enic: 40V 74A 83W 3.4m´Î@10V18A 2.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

***nsix Microsemi: Power Field-Effect Transistor, 75A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***et: N-CHANNEL 40-V (D-S) 175C MOSFET

***ure Electronics: Single N-Channel 40 V 2.4 mOhm 92 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5x6mm package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 40V, 85A, 2.4 mOhm, 92 nC Qg, PQFN56 | Infineon IRFH7440TRPBF

*** Source Electronics: Trans MOSFET N-CH Si 40V 159A 8-Pin QFN EP T/R / MOSFET N-CH 40V 85A 8PQFN

***roFlash: Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N-CH 40V 85A 8-Pin PQFN T/R 4k - Tape and Reel

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 104 W

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ark: T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78

***icroelectronics: N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET, N CH, 30V, 80A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(on):0.0025ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 80A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***emi: Single N-Channel Power MOSFET 40V, 85A, 3.8mΩ Power MOSFET 40V, 85A, 3.8 mOhm, Single N-Channel, u8FL, Logic Level

***ical: Trans MOSFET N-CH 40V 20A 8-Pin WDFN EP T/R

***enic: 40V 20A 3.8m´Î@10V20A 3.2W 2V@250Ã×A N Channel WDFN-8 MOSFETs ROHS

***nell: MOSFET, N-CH, 40V, 85A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 55W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

*** Stop Electro: Power Field-Effect Transistor, 85A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***DA Technology Co., Ltd.: Product Description Demo for Development.

***Yang: T6 40V NCH LL IN U8FL - Tape and Reel

***ure Electronics: SQJ858AEP Series 40 V 58 A Automotive N-Channel Mosfet - PowerPAK® SO-8L

***-Wing Technology: VISHAY SQJ858AEP-T1-GE3MOSFET Transistor, N Channel, 58 A, 40 V, 0.005 ohm, 10 V, 2 V

***nell: MOSFET, N-CH, 40V, 58A, PPAKSO8L; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***ure Electronics: 40 V 60 A 55 W SMT Automotive N-Channel Mosfet - PowerPAK® SO-8L

*** Electronics: VISHAY SILICONIX SQJ886EP-T1-GE3 MOSFET, N-CH, 40V, 60A, PPAKSO8L

***ronik: N-CH 40V 60A 45mOhm PPSO-8L RoHSconf

*** Americas: N-CHANNEL 40-V (D-S) 175C MOSFET

***enic: PowerPAK SO-8-4 Pre-ordered Chips ROHS

***nell: MOSFET, N-CH, 40V, 60A, PPAKSO8L; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:55W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

SQJ422EP-T1_GE3 Maggiori informazioni

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SQJ422EP-T1-GE3 DISTI # V72:2272_09219162	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant	1043	1000:$0.6727 500:$0.8097 250:$0.8900 100:$0.9889 25:$1.1516 10:$1.2796 1:$1.7081
SQJ422EP-T1-GE3 DISTI # V36:1790_09219162	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant	0	3000000:$0.6136 1500000:$0.6138 300000:$0.6280 30000:$0.6511 3000:$0.6549
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6082In Stock	1000:$0.7300 500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6082In Stock	1000:$0.7300 500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	15000:$0.6048 6000:$0.6284 3000:$0.6615
SQJ422EP-T1-GE3 DISTI # 18881595	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant	3000	3000:$0.4726
SQJ422EP-T1-GE3 DISTI # 31578091	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant	1045	12:$1.7081
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 75A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ422EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.5759 18000:$0.5919 12000:$0.6089 6000:$0.6349 3000:$0.6549
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 75A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ422EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQJ422EP-T1_GE3 DISTI # SQJ422EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 75A 8-Pin PowerPAK SO T/R (Alt: SQJ422EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4729 18000:€0.4949 12000:€0.5599 6000:€0.6899 3000:€0.9619
SQJ422EP-T1_GE3 DISTI # 76Y1532	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSFET	0	10000:$0.5720 6000:$0.5850 4000:$0.6080 2000:$0.6750 1000:$0.7430 1:$0.7740
SQJ422EP-T1-GE3 DISTI # 99W9662	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSFET	0
SQJ422EP-T1_GE3 DISTI # 781-SQJ422EP-T1_GE3	Vishay Intertechnologies	MOSFET -40V 75A 83W AEC-Q101 Qualified RoHS: Compliant	13148	1:$1.5700 10:$1.2900 100:$0.9940 500:$0.8550 1000:$0.6740 3000:$0.6290 6000:$0.5980 9000:$0.5760
SQJ422EP-T1-GE3 DISTI # 781-SQJ422EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3 RoHS: Compliant	0
SQJ422EP-T1-GE3 DISTI # 2364119	Vishay Intertechnologies	MOSFET, N-CH, 40V, 75A, PPAKSO8L RoHS: Compliant	0	9000:$0.8210 3000:$0.8490 1000:$0.8800 500:$0.9470 250:$1.0900 100:$1.2600 10:$1.5900 1:$1.9700
SQJ422EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3 RoHS: Compliant	Americas - 6000	3000:$0.6550 6000:$0.6330 12000:$0.6180 18000:$0.6030

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Disponibilità

Azione:: 13
Su ordine:: 1996
Inserisci la quantità:

Il prezzo attuale di SQJ422EP-T1_GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,57 USD~~; ~~1,57 USD~~

10: ~~1,29 USD~~; ~~12,90 USD~~

100: ~~0,99 USD~~; ~~99,40 USD~~

500: ~~0,86 USD~~; ~~427,50 USD~~

1000: ~~0,67 USD~~; ~~674,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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SQJ422EP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

V***i

V***t

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes