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CSD25303W1015

CSD25303W1015
Mfr. #:
CSD25303W1015
Descrizione:
MOSFET PCh NexFET Pwr MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CSD25303W1015 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CSD25303W1015 maggiori informazioni CSD25303W1015 Product Details
Attributo del prodotto
Valore attributo
Produttore:
Texas Instruments
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DSBGA-6
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
20 V
Id - Corrente di scarico continua:
3 A
Rds On - Resistenza Drain-Source:
56 mOhms
Vgs - Tensione Gate-Source:
8 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
1.5 W
Configurazione:
Separare
Nome depositato:
NexFET
Confezione:
Bobina
Altezza:
0.625 mm
Lunghezza:
1.5 mm
Serie:
CSD25303W1015
Tipo di transistor:
1 P-Channel
Larghezza:
1 mm
Marca:
Texas Instruments
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Unità di peso:
0.000060 oz
Tags
CSD2530, CSD253, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rchild Semiconductor
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
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*** Americas
=""=""=""SOT1118/ STANDARD MARKING * REEL PACK, SMD, 7""""""""
***S
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***ark
DUAL P CH MOSFET, TRENCH, 320V, -3.5A, SOT-1118; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:-4.5V ;RoHS Compliant: Yes
Parte # Descrizione Azione Prezzo
CSD25303W1015
DISTI # 296-28317-2-ND		MOSFET P-CH 20V 3A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    CSD25303W1015
    DISTI # 296-28317-1-ND    		MOSFET P-CH 20V 3A 6DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      CSD25303W1015
      DISTI # 296-28317-6-ND      		MOSFET P-CH 20V 3A 6DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        CSD25303W1015
        DISTI # CSD25303W1015        		Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD25303W1015)
        RoHS: Not Compliant
        Min Qty: 1000        		Americas - 0
        • 1000:$0.3619
        • 1002:$0.3449
        • 2002:$0.3329
        • 5000:$0.3219
        • 10000:$0.3129
        CSD25303W1015Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		4390
        • 1000:$0.3300
        • 500:$0.3500
        • 100:$0.3600
        • 25:$0.3800
        • 1:$0.4100
        CSD25303W1015
        DISTI # 595-CSD25303W1015        		MOSFET PCh NexFET Pwr MOSFET
        RoHS: Compliant        		0
          Immagine Parte # Descrizione
          CSD25310Q2T

          Mfr.#: CSD25310Q2T

          OMO.#: OMO-CSD25310Q2T

          		 MOSFET -20V, P ch NexFET MOSFETG , single SON 2x2, 23.9mOhm 6-WSON -55 to 150
          CSD25310Q2

          Mfr.#: CSD25310Q2

          OMO.#: OMO-CSD25310Q2

          		 MOSFET 20-V P-CH NexFET Pwr MOSFET
          CSD25304W1015T

          Mfr.#: CSD25304W1015T

          OMO.#: OMO-CSD25304W1015T

          		 MOSFET 20V P-Ch NexFET
          CSD25301W1015

          Mfr.#: CSD25301W1015

          OMO.#: OMO-CSD25301W1015

          		 MOSFET P-Ch NexFET Power MOSFETs
          CSD25302Q2

          Mfr.#: CSD25302Q2

          OMO.#: OMO-CSD25302Q2

          		 MOSFET PCh NexFET Pwr MOSFET
          CSD25303W1015

          Mfr.#: CSD25303W1015

          OMO.#: OMO-CSD25303W1015

          		 MOSFET PCh NexFET Pwr MOSFET
          CSD25302Q2

          Mfr.#: CSD25302Q2

          OMO.#: OMO-CSD25302Q2-TEXAS-INSTRUMENTS

          		 MOSFET P-CH 20V 5A 6SON
          CSD25304W1015T

          Mfr.#: CSD25304W1015T

          OMO.#: OMO-CSD25304W1015T-TEXAS-INSTRUMENTS

          		 MOSFET P-CH 20V 3A 6DSBGA
          CSD25310Q2T

          Mfr.#: CSD25310Q2T

          OMO.#: OMO-CSD25310Q2T-TEXAS-INSTRUMENTS

          		 20-V P-CHANNEL NEXFET POWER MOSF
          CSD25310Q2

          Mfr.#: CSD25310Q2

          OMO.#: OMO-CSD25310Q2-TEXAS-INSTRUMENTS

          		 Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
          Disponibilità
          Azione:
          Available
          Su ordine:
          4500
          Inserisci la quantità:
          Il prezzo attuale di CSD25303W1015 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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