DMN3016LSS-13

Mfr. #:: DMN3016LSS-13
Produttore:: Diodes Incorporated
Descrizione:: MOSFET 30V N-Ch Enh FET 20Vdss 1.5W
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: DMN3016LSS-13 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMN3016LSS-13 Datasheet DMN3016LSS-13 Datasheet (P4-P6)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Diodi incorporati

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SO-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 10.3 A

Rds On - Resistenza Drain-Source:: 8 mOhms

Vgs th - Tensione di soglia gate-source:: 1.3 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 25.1 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 1.5 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Serie:: DMN3016

Tipo di transistor:: 1 N-Channel

Marca:: Diodi incorporati

Transconduttanza diretta - Min:: -

Tempo di caduta:: 5.6 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 16.5 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 26.1 ns

Tempo di ritardo di accensione tipico:: 4.8 ns

Unità di peso:: 0.002610 oz

Tags: DMN3016LS, DMN3016, DMN301, DMN30, DMN3, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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DMN3016LSS-13 Descrizione

***ure Electronics: DMN3016LSS Series 30 V 10.3 A N-Channel Enhancement Mode Mosfet - SOIC-8

***et: Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R

***ark: Mosfet, N-Ch, 30V, 10.3A, Soic Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ark: MOSFET Transistor, P Channel, -12 A, -30 V, 10 mohm, -10 V, -1.8 V

***ure Electronics: Single P-Channel 30 V 19.7 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***nell: MOSFET,P CH,30V,12A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power D

***eco: Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS +/-20V;VF 1

***ure Electronics: Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

***ical: Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 7.3A, 10V 13A Ta -55°C~150°C TJ MOSFET N-CH 30V 13A 8-SOIC

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat

***Yang: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ

***ure Electronics: N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8

***et Europe: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ure Electronics: Single P-Channel 30 V 11.9 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -12A, 11.9 MOHM, 25VGS, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Source Voltage Vds:-30V; On Resistance

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***nell: MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***Yang: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***ure Electronics: N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ

***et Europe: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11.6A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***Yang: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ

***ure Electronics: N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8

***et Europe: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
DMN3016LSS-13 DISTI # V72:2272_06698171	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R RoHS: Compliant	24	10:$0.3834 1:$0.4673
DMN3016LSS-13 DISTI # DMN3016LSS-13DICT-ND	Diodes Incorporated	MOSFET N-CH 30V 10.3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2350In Stock	1000:$0.2177 500:$0.2817 100:$0.3841 10:$0.5120 1:$0.6100
DMN3016LSS-13 DISTI # DMN3016LSS-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 30V 10.3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2350In Stock	1000:$0.2177 500:$0.2817 100:$0.3841 10:$0.5120 1:$0.6100
DMN3016LSS-13 DISTI # DMN3016LSS-13DITR-ND	Diodes Incorporated	MOSFET N-CH 30V 10.3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.1927
DMN3016LSS-13 DISTI # C1S205700494584	Diodes Incorporated	Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R RoHS: Compliant	24	10:$0.3834
DMN3016LSS-13 DISTI # C1S205700551065	Diodes Incorporated	Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R RoHS: Compliant	24	2500:$0.2153
DMN3016LSS-13 DISTI # DMN3016LSS-13	Diodes Incorporated	Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R - Tape and Reel (Alt: DMN3016LSS-13) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.1399 5000:$0.1329 10000:$0.1269 15000:$0.1209 25000:$0.1179
DMN3016LSS-13 DISTI # 621-DMN3016LSS-13	Diodes Incorporated	MOSFET 30V N-Ch Enh FET 20Vdss 1.5W RoHS: Compliant	4982	1:$0.5000 10:$0.4080 100:$0.2490 1000:$0.1930 2500:$0.1640

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Disponibilità

Azione:: Available
Su ordine:: 1987
Inserisci la quantità:

Il prezzo attuale di DMN3016LSS-13 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,49 USD~~; ~~0,49 USD~~

10: ~~0,41 USD~~; ~~4,08 USD~~

100: ~~0,25 USD~~; ~~24,90 USD~~

1000: ~~0,19 USD~~; ~~193,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

DMN3016LS 3
DMN3016 17
DMN301 45
DMN30 180
DMN3 263
DMN 1106

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DMN3016LSS-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes