RF1S630SM

RF1S630SM
Mfr. #:
RF1S630SM
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RF1S630SM Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
RF1S63, RF1S6, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
RF1S630SMHarris SemiconductorPower Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
2098
  • 1000:$0.9500
  • 500:$1.0000
  • 100:$1.0400
  • 25:$1.0800
  • 1:$1.1700
RF1S630SM9AHarris SemiconductorPower Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
4000
  • 1000:$0.9900
  • 500:$1.0400
  • 100:$1.0800
  • 25:$1.1300
  • 1:$1.2200
RF1S630SMHarris Semiconductor 30
    Immagine Parte # Descrizione
    RF1S 3R3J

    Mfr.#: RF1S 3R3J

    OMO.#: OMO-RF1S-3R3J-1190

    Nuovo e originale
    RF1S25N06SM

    Mfr.#: RF1S25N06SM

    OMO.#: OMO-RF1S25N06SM-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S40N10LESM9A

    Mfr.#: RF1S40N10LESM9A

    OMO.#: OMO-RF1S40N10LESM9A-1190

    MOSFET 100V Single
    RF1S45N06S

    Mfr.#: RF1S45N06S

    OMO.#: OMO-RF1S45N06S-1190

    Nuovo e originale
    RF1S45N06SM

    Mfr.#: RF1S45N06SM

    OMO.#: OMO-RF1S45N06SM-1190

    Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S50N06SM

    Mfr.#: RF1S50N06SM

    OMO.#: OMO-RF1S50N06SM-1190

    Nuovo e originale
    RF1S540SM

    Mfr.#: RF1S540SM

    OMO.#: OMO-RF1S540SM-1190

    Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S630

    Mfr.#: RF1S630

    OMO.#: OMO-RF1S630-1190

    Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S9540SM

    Mfr.#: RF1S9540SM

    OMO.#: OMO-RF1S9540SM-1190

    Nuovo e originale
    RF1S9640SM9A

    Mfr.#: RF1S9640SM9A

    OMO.#: OMO-RF1S9640SM9A-1190

    MOSFET TO-263
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di RF1S630SM è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,42 USD
    1,42 USD
    10
    1,35 USD
    13,54 USD
    100
    1,28 USD
    128,25 USD
    500
    1,21 USD
    605,65 USD
    1000
    1,14 USD
    1 140,00 USD
    Iniziare con
    Prodotti più recenti
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top