RF1S25N06SM

RF1S25N06SM
Mfr. #:
RF1S25N06SM
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RF1S25N06SM Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
RF1S25N06SM, RF1S25N06S, RF1S25, RF1S2, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
25A ,60V, 0.047ohm, N-CH Si, PMOS TO-263AB
Parte # Mfg. Descrizione Azione Prezzo
RF1S25N06SMHarris SemiconductorPower Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
3005
  • 1000:$0.5900
  • 500:$0.6200
  • 100:$0.6500
  • 25:$0.6800
  • 1:$0.7300
RF1S25N06SM9AHarris SemiconductorPower Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
4000
  • 1000:$0.6200
  • 500:$0.6500
  • 100:$0.6800
  • 25:$0.7100
  • 1:$0.7600
RF1S25N06SMR4643Harris Semiconductor 
RoHS: Not Compliant
3200
  • 1000:$0.5900
  • 500:$0.6200
  • 100:$0.6500
  • 25:$0.6800
  • 1:$0.7300
Immagine Parte # Descrizione
RF1S22N10SM

Mfr.#: RF1S22N10SM

OMO.#: OMO-RF1S22N10SM-1190

Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S22N10SM9A

Mfr.#: RF1S22N10SM9A

OMO.#: OMO-RF1S22N10SM9A-1190

MOSFET 100V Single
RF1S23N06LE

Mfr.#: RF1S23N06LE

OMO.#: OMO-RF1S23N06LE-1190

Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S23N06LESM

Mfr.#: RF1S23N06LESM

OMO.#: OMO-RF1S23N06LESM-1190

Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06

Mfr.#: RF1S25N06

OMO.#: OMO-RF1S25N06-1190

- Bulk (Alt: RF1S25N06)
RF1S25N06S3S

Mfr.#: RF1S25N06S3S

OMO.#: OMO-RF1S25N06S3S-1190

Nuovo e originale
RF1S25N06SM

Mfr.#: RF1S25N06SM

OMO.#: OMO-RF1S25N06SM-1190

Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SM9A

Mfr.#: RF1S25N06SM9A

OMO.#: OMO-RF1S25N06SM9A-1190

Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SMR4643

Mfr.#: RF1S25N06SMR4643

OMO.#: OMO-RF1S25N06SMR4643-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
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