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SI4431BDY-T1-E3

SI4431BDY-T1-E3
Mfr. #:
SI4431BDY-T1-E3
Produttore:
Vishay
Descrizione:
MOSFET P-CH 30V 5.7A 8-SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4431BDY-T1-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI4431BDY-T1-E3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SI4431BDY-E3
Unità di peso
0.006596 oz
Stile di montaggio
SMD/SMT
Nome depositato
TrenchFET
Pacchetto-Custodia
8-SOIC (0.154", 3.90mm Width)
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
8-SO
Configurazione
Separare
Tipo FET
MOSFET Canale P, ossido di metallo
Potenza-Max
1.5W
Tipo a transistor
1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
-
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
5.7A (Ta)
Rds-On-Max-Id-Vgs
30 mOhm @ 7.5A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Carica-Qg-Vgs
20nC @ 5V
Pd-Power-Dissipazione
1.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
47 ns
Ora di alzarsi
10 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
5.7 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Rds-On-Drain-Source-Resistenza
30 mOhms
Polarità del transistor
Canale P
Tempo di ritardo allo spegnimento tipico
70 ns
Tempo di ritardo all'accensione tipico
10 ns
Modalità canale
Aumento
Tags
SI4431BDY-T1-E, SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4431BDY-T1-E3 P-channel MOSFET Transistor; 5.7 A; 30 V; 8-Pin SOIC
***ure Electronics
Single P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SOIC-8
***ment14 APAC
MOSFET, N, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.8A; Package / Case:8-SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
***ark
P Channel Mosfet, 30V, -7.5A, Soic; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.5A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: No
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SI4431BDY-T1-E3
DISTI # V72:2272_07432075		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R
RoHS: Compliant		446
  • 250:$0.5199
  • 100:$0.5215
  • 25:$0.6279
  • 10:$0.6307
  • 1:$0.7215
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3CT-ND		Vishay SiliconixMOSFET P-CH 30V 5.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		15700In Stock
  • 1000:$0.4331
  • 500:$0.5414
  • 100:$0.7308
  • 10:$0.9470
  • 1:$1.0800
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 5.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		15700In Stock
  • 1000:$0.4331
  • 500:$0.5414
  • 100:$0.7308
  • 10:$0.9470
  • 1:$1.0800
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 30V 5.7A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		15000In Stock
  • 2500:$0.3810
SI4431BDY-T1-E3
DISTI # 30345654		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R
RoHS: Compliant		446
  • 250:$0.5199
  • 100:$0.5215
  • 25:$0.6279
  • 24:$0.6307
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 5000
  • 2500:$0.3259
  • 5000:$0.3169
  • 10000:$0.3039
  • 15000:$0.2949
  • 25000:$0.2869
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.5799
  • 5000:€0.3949
  • 10000:€0.3399
  • 15000:€0.3139
  • 25000:€0.2919
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4431BDY-T1-E3
    DISTI # 06J7725    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7725)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$1.2400
    • 10:$1.0100
    • 25:$0.9320
    • 50:$0.8530
    • 100:$0.7750
    • 250:$0.7210
    • 500:$0.6670
    SI4431BDY-T1-E3
    DISTI # 06J7725    		Vishay IntertechnologiesP CHANNEL MOSFET, 30V, -7.5A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes388
    • 1:$1.2400
    • 10:$1.0100
    • 25:$0.9320
    • 50:$0.8530
    • 100:$0.7750
    • 250:$0.7210
    • 500:$0.6670
    SI4431BDY-T1-E3.
    DISTI # 26AC3330    		Vishay IntertechnologiesFOR NEW DESIGNS USE SI4431CDY-T1-GE3 , ROHS COMPLIANT: NO5000
    • 1:$0.4100
    • 2500:$0.4030
    • 5000:$0.3950
    • 10000:$0.3900
    • 15000:$0.3890
    SI4431BDY-T1-E3
    DISTI # 70026219    		Vishay SiliconixSI4431BDY-T1-E3 P-channel MOSFET Transistor,5.7 A,30 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 2500:$0.5000
    • 5000:$0.4800
    • 12500:$0.4700
    • 25000:$0.4500
    • 62500:$0.4300
    SI4431BDY-T1-E3
    DISTI # 781-SI4431BDY-E3    		Vishay IntertechnologiesMOSFET 30V (D-S) 7.5A
    RoHS: Compliant    		1653
    • 1:$1.0300
    • 10:$0.8420
    • 100:$0.6460
    • 500:$0.5560
    • 1000:$0.4390
    • 2500:$0.4100
    • 5000:$0.3890
    SI4431BDY-T1
    DISTI # 781-SI4431BDY    		Vishay IntertechnologiesMOSFET 30V 7.5A 1.5W
    RoHS: Not compliant    		0
      SI4431BDY-T1-E3Vishay IntertechnologiesSingle P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SOIC-8
      RoHS: Compliant      		15000Reel
      • 2500:$0.4800
      SI4431BDY-T1-E3Vishay Intertechnologies 1996
        SI4431BDY-T1-E3Vishay Siliconix 1105
          SI4431BDY-T1-E3Vishay Intertechnologies 863
            SI4431BDY-T1-E3VISHAY SILCONEXMOSFET Transistor, P-Channel, SO14
            • 6:$0.8652
            • 1:$1.0815
            SI4431BDY-T1-E3Vishay IntertechnologiesMOSFET Transistor, P-Channel, SO501
            • 212:$0.7600
            • 54:$0.9500
            • 1:$1.9000
            SI4431BDY-T1-E3UnknownMOSFET Transistor, P-Channel, SO1211
            • 1001:$0.7000
            • 201:$0.8000
            • 1:$2.0000
            SI4431BDY-T1-E3Vishay SiliconixMOSFET Transistor, P-Channel, SO39
            • 13:$1.2273
            • 3:$1.6364
            • 1:$2.0455
            SI4431BDY-T1-E3 INSTOCK12359
              SI4431BDY-T1-E3Vishay IntertechnologiesINSTOCK18165
                SI4431BDY-T1-E3Vishay IntertechnologiesINSTOCK1620
                  SI4431BDY-T1-E3Vishay IntertechnologiesMOSFET 30V (D-S) 7.5A
                  RoHS: Compliant                  		Americas - 20000
                    SI4431BDY-T1-E3
                    DISTI # C1S803600845006                    		Vishay IntertechnologiesMOSFETs
                    RoHS: Compliant                    		446
                    • 250:$0.5178
                    • 100:$0.5195
                    • 25:$0.6246
                    • 10:$0.6274
                    SI4431BDY-T1-E3
                    DISTI # 1612646                    		Vishay IntertechnologiesMOSFET, P, 8-SOIC
                    RoHS: Compliant                    		0
                    • 1:$1.6300
                    • 10:$1.3400
                    • 100:$1.0300
                    • 500:$0.8800
                    • 1000:$0.6960
                    • 2500:$0.6490
                    • 5000:$0.6160
                    SI4431BDY-T1-E3
                    DISTI # XSFP00000090668                    		Vishay Siliconix 
                    RoHS: Compliant                    		35333
                    • 2500:$0.9600
                    • 35333:$0.8727
                    Immagine Parte # Descrizione
                    SI4431BDY-T1-GE3

                    Mfr.#: SI4431BDY-T1-GE3

                    OMO.#: OMO-SI4431BDY-T1-GE3

                    		 MOSFET 30V 7.5A 2.5W 30mohm @ 10V
                    SI4431BDY-T1-E3-CUT TAPE

                    Mfr.#: SI4431BDY-T1-E3-CUT TAPE

                    OMO.#: OMO-SI4431BDY-T1-E3-CUT-TAPE-1190

                    		 Nuovo e originale
                    SI4431B

                    Mfr.#: SI4431B

                    OMO.#: OMO-SI4431B-1190

                    		 Nuovo e originale
                    SI4431BDY

                    Mfr.#: SI4431BDY

                    OMO.#: OMO-SI4431BDY-1190

                    		 MOSFET Transistor, P-Channel, SO
                    SI4431BDY-T1-E3

                    Mfr.#: SI4431BDY-T1-E3

                    OMO.#: OMO-SI4431BDY-T1-E3-VISHAY

                    		 MOSFET P-CH 30V 5.7A 8-SOIC
                    SI4431BDY-T1-E3 GE3

                    Mfr.#: SI4431BDY-T1-E3 GE3

                    OMO.#: OMO-SI4431BDY-T1-E3-GE3-1190

                    		 Nuovo e originale
                    SI4431BDY-T1-E3-S

                    Mfr.#: SI4431BDY-T1-E3-S

                    OMO.#: OMO-SI4431BDY-T1-E3-S-1190

                    		 Nuovo e originale
                    SI4431BDY-T1-E3CT

                    Mfr.#: SI4431BDY-T1-E3CT

                    OMO.#: OMO-SI4431BDY-T1-E3CT-1190

                    		 Nuovo e originale
                    SI4431BDY-T1-GE3

                    Mfr.#: SI4431BDY-T1-GE3

                    OMO.#: OMO-SI4431BDY-T1-GE3-VISHAY

                    		 MOSFET P-CH 30V 5.7A 8SOIC
                    SI4431BDYT1E3

                    Mfr.#: SI4431BDYT1E3

                    OMO.#: OMO-SI4431BDYT1E3-1190

                    		 Nuovo e originale
                    Disponibilità
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