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CMLDM3757 TR

CMLDM3757 TR
Mfr. #:
CMLDM3757 TR
Produttore:
Central Semiconductor
Descrizione:
Darlington Transistors MOSFET N&P Chan Comp Mosfet's
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CMLDM3757 TR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
CMLDM3757 TR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Central Semiconductor Corp
categoria di prodotto
FET - Array
Serie
CMLDM3
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.000289 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SOT-563, SOT-666
Tecnologia
si
Temperatura di esercizio
-65°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
SOT-563
Configurazione
Canale N Canale P
Tipo FET
Canale N e P
Potenza-Max
350mW
Tipo a transistor
1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss
20V
Ingresso-Capacità-Ciss-Vds
150pF @ 16V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
540mA, 430mA
Rds-On-Max-Id-Vgs
550 mOhm @ 540mA, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Carica-Qg-Vgs
1.58nC @ 4.5V
Pd-Power-Dissipazione
350 mW
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 65 C
Vgs-Gate-Source-Voltage
8 V
Id-Continuo-Scarico-Corrente
540 mA
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1 V
Rds-On-Drain-Source-Resistenza
750 mOhms
Polarità del transistor
Canale N Canale P
Tempo di ritardo allo spegnimento tipico
25 ns 48 ns
Tempo di ritardo all'accensione tipico
10 ns 38 ns
Qg-Gate-Carica
1.58 nC 1.2 nC
Modalità canale
Aumento
Tags
CMLDM3, CMLDM, CMLD, CML
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
N-Channel and P-Channel Enhancement Mode Complementary MOSFET 20V 430mA 6-Pin SOT-563 T/R
***ure Electronics
CMLD Series 20V 2 Ohm DualN-Ch & P-Ch Enhancement-Mode Complementary Mosfet
***i-Key
MOSFET N/P-CH 20V SOT563
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Parte # Mfg. Descrizione Azione Prezzo
CMLDM3757 TR
DISTI # CMLDM3757CT-ND		Central Semiconductor CorpMOSFET N/P-CH 20V SOT563
Min Qty: 1
Container: Cut Tape (CT)		12434In Stock
  • 1000:$0.2101
  • 500:$0.2719
  • 100:$0.3461
  • 10:$0.4640
  • 1:$0.5400
CMLDM3757 TR
DISTI # CMLDM3757DKR-ND		Central Semiconductor CorpMOSFET N/P-CH 20V SOT563
Min Qty: 1
Container: Digi-Reel®		12434In Stock
  • 1000:$0.2101
  • 500:$0.2719
  • 100:$0.3461
  • 10:$0.4640
  • 1:$0.5400
CMLDM3757 TR
DISTI # CMLDM3757TR-ND		Central Semiconductor CorpMOSFET N/P-CH 20V SOT563
Min Qty: 3000
Container: Tape & Reel (TR)		12000In Stock
  • 30000:$0.1596
  • 15000:$0.1620
  • 6000:$0.1740
  • 3000:$0.1860
CMLDM3757 TR
DISTI # CMLDM3757 TR		Central Semiconductor CorpN-Channel and P-Channel Enhancement Mode Complementary MOSFET 20V 430mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: CMLDM3757 TR)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1369
  • 18000:$0.1399
  • 12000:$0.1469
  • 6000:$0.1549
  • 3000:$0.1569
CMLDM3757 TR
DISTI # 610-CMLDM3757		Central Semiconductor CorpMOSFET N&P Chan Comp Mosfet's
RoHS: Compliant		5070
  • 1:$0.5100
  • 10:$0.4340
  • 100:$0.2730
  • 1000:$0.2050
  • 3000:$0.1740
  • 9000:$0.1630
  • 24000:$0.1540
  • 45000:$0.1500
Immagine Parte # Descrizione
CMLDM3757 TR

Mfr.#: CMLDM3757 TR

OMO.#: OMO-CMLDM3757-TR

 MOSFET N&P Chan Comp Mosfet's
CMLDM3737 TR

Mfr.#: CMLDM3737 TR

OMO.#: OMO-CMLDM3737-TR

 MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
CMLDM3737

Mfr.#: CMLDM3737

OMO.#: OMO-CMLDM3737-1190

 Nuovo e originale
CMLDM3737 TR

Mfr.#: CMLDM3737 TR

OMO.#: OMO-CMLDM3737-TR-CENTRAL-SEMICONDUCTOR

 MOSFET 2N-CH 20V 0.54A SOT563
CMLDM3757

Mfr.#: CMLDM3757

OMO.#: OMO-CMLDM3757-1190

 Nuovo e originale
CMLDM3757 TR

Mfr.#: CMLDM3757 TR

OMO.#: OMO-CMLDM3757-TR-CENTRAL-SEMICONDUCTOR

 Darlington Transistors MOSFET N&P Chan Comp Mosfet's
Disponibilità
Azione:
Available
Su ordine:
1000
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Il prezzo attuale di CMLDM3757 TR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,21 USD
0,21 USD
10
0,20 USD
1,95 USD
100
0,18 USD
18,48 USD
500
0,17 USD
87,25 USD
1000
0,16 USD
164,30 USD
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