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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SQM100N10-10-GE3 DISTI # V36:1790_09219223 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) 175C MOS RoHS: Compliant | 0 |
|
| SQM100N10-10_GE3 DISTI # SQM100N10-10_GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 100A TO-263 RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | 800In Stock |
|
| SQM100N10-10_GE3 DISTI # SQM100N10-10_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3) RoHS: Compliant Min Qty: 800 Container: Bulk | Americas - 0 |
|
| SQM100N10-10_GE3 DISTI # SQM100N10-10-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (Alt: SQM100N10-10-GE3) RoHS: Compliant Min Qty: 800 | Europe - 0 |
|
| SQM100N10-10_GE3 DISTI # 78-SQM100N10-10_GE3 | Vishay Intertechnologies | MOSFET 100V 100A 375W AEC-Q101 Qualified RoHS: Compliant | 800 |
|
| SQM100N10-10-GE3 DISTI # 78-SQM100N10-10-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 RoHS: Compliant | 0 | |
| SQM100N10-10-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 783 |
|
| SQM100N1010GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 800 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SQM100N10-10_GE3 OMO.#: OMO-SQM100N10-10-GE3-A5D |
MOSFET 100V 100A 375W AEC-Q101 Qualified |
|
|
Mfr.#: SQM100N10-10-GE3 OMO.#: OMO-SQM100N10-10-GE3-045 |
MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 |
|
Mfr.#: SQM100N10-10 OMO.#: OMO-SQM100N10-10-1190 |
Nuovo e originale |
|
|
Mfr.#: SQM100N10-10-GE3 OMO.#: OMO-SQM100N10-10-GE3-1190 |
N-CHANNEL 100-V (D-S) 175C MOS |
|
Mfr.#: SQM100N10-10_GE3 OMO.#: OMO-SQM100N10-10-GE3-VISHAY |
MOSFET N-CH 100V 100A TO-263 |
|
|
Mfr.#: SQM100N1010GE3 OMO.#: OMO-SQM100N1010GE3-1190 |
Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
