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SQM100N10-10_GE3

SQM100N10-10_GE3
Mfr. #:
SQM100N10-10_GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 100V 100A 375W AEC-Q101 Qualified
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SQM100N10-10_GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQM100N10-10_GE3 DatasheetSQM100N10-10_GE3 Datasheet (P4-P6)SQM100N10-10_GE3 Datasheet (P7-P9)SQM100N10-10_GE3 Datasheet (P10)
ECAD Model:
Maggiori informazioni:
SQM100N10-10_GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
100 A
Rds On - Resistenza Drain-Source:
7 mOhms
Vgs th - Tensione di soglia gate-source:
1.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
185 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
375 W
Configurazione:
Separare
Modalità canale:
Aumento
Qualificazione:
AEC-Q101
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
4.83 mm
Lunghezza:
10.67 mm
Serie:
SQ
Tipo di transistor:
1 N-Channel
Larghezza:
9.65 mm
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
115 S
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
44 ns
Tempo di ritardo di accensione tipico:
13 ns
Unità di peso:
0.077603 oz
Tags
SQM100N10-1, SQM100N1, SQM100N, SQM100, SQM10, SQM1, SQM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
***-Wing Technology
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
N-CHANNEL 100-V (D-S) 175C MOSFET
***emi
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
***Yang
Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***nell
MOSFET, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W
***r Electronics
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 39 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 245 / Power Dissipation (Pd) W = 310
***icroelectronics
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package
***et
Trans MOSFET N-CH 100V 120A 3-Pin H2PAK T/R
*** Electronic Components
MOSFET N-Ch 100V 7.8 mOhm 120 A STripFET
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Power MOSFETs, 100V, 120A, H2PAK-2, Tape and Reel
***icroelectronics
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
***ure Electronics
N-channel 100 V 0.0068 Ohm Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***nell
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VII DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
***ical
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 100V, 80A, 175DEG C, 110W;
***icroelectronics SCT
Power MOSFETs, 100V, 80A, H2PAK-2, Tape and Reel
***ure Electronics
N-Channel 80 V 0.01 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB
***emi
N-Channel UltraFET Power MOSFET 80V, 75A, 10mΩ
***Yang
Trans MOSFET N-CH 80V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N CH, 80V, 75A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Source Voltage Vds:80V; On Resistance
***r Electronics
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 80V, 75A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0082ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 270W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***ow.cn
Trans MOSFET N-CH Si 100V 97A Automotive 3-Pin(2+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 100V 69A D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Summary of Features: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Parte # Mfg. Descrizione Azione Prezzo
SQM100N10-10-GE3
DISTI # V36:1790_09219223		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) 175C MOS
RoHS: Compliant		0
  • 800000:$1.3910
  • 400000:$1.3930
  • 80000:$1.5270
  • 8000:$1.7430
  • 800:$1.7780
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$1.3709
  • 2400:$1.4244
  • 1600:$1.4994
  • 800:$1.7779
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		800In Stock
  • 100:$2.1511
  • 10:$2.6250
  • 1:$2.9200
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		800In Stock
  • 100:$2.1511
  • 10:$2.6250
  • 1:$2.9200
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3)
RoHS: Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.2900
  • 800:$1.3900
  • 1600:$1.3900
SQM100N10-10_GE3
DISTI # SQM100N10-10-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (Alt: SQM100N10-10-GE3)
RoHS: Compliant
Min Qty: 800		Europe - 0
  • 8000:€1.2900
  • 4800:€1.3900
  • 3200:€1.4900
  • 1600:€1.8900
  • 800:€2.6900
SQM100N10-10_GE3
DISTI # 78-SQM100N10-10_GE3		Vishay IntertechnologiesMOSFET 100V 100A 375W AEC-Q101 Qualified
RoHS: Compliant		800
  • 1:$3.2100
  • 10:$2.8600
  • 100:$2.3400
  • 250:$1.8900
  • 500:$1.7500
  • 800:$1.5900
  • 2400:$1.3500
SQM100N10-10-GE3
DISTI # 78-SQM100N10-10-GE3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3
RoHS: Compliant		0
    SQM100N10-10-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB783
    • 348:$1.3320
    • 121:$1.4430
    • 1:$3.3300
    SQM100N1010GE3Vishay IntertechnologiesPower Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		800
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      Disponibilità
      Azione:
      755
      Su ordine:
      2738
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      Prezzo di riferimento (USD)
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      est. Prezzo
      1
      3,21 USD
      3,21 USD
      10
      2,86 USD
      28,60 USD
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      2,34 USD
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      250
      1,89 USD
      472,50 USD
      500
      1,75 USD
      875,00 USD
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